Nanotechnology最新文献_第7页

Auriferous nanozymes: advances in diagnostic and therapeutic applications. 曙光纳米酶：诊断和治疗应用的进展。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-08 DOI: 10.1088/1361-6528/ad7f5d

Akanksha Deshwal, Ravi Mani Tripathi, Kirti Saxena, Faheem A Sheikh, Prashant Mishra

{"title":"Auriferous nanozymes: advances in diagnostic and therapeutic applications.","authors":"Akanksha Deshwal, Ravi Mani Tripathi, Kirti Saxena, Faheem A Sheikh, Prashant Mishra","doi":"10.1088/1361-6528/ad7f5d","DOIUrl":"10.1088/1361-6528/ad7f5d","url":null,"abstract":"Nanozymes are a group of nanomaterials that garnered significant attention due to their enzyme-mimicking properties and their catalytic activities comparable to those of natural enzymes. The ability of nanozymes to emulate crucial biological processes which can conquer the drawbacks of natural enzymes, such as their restricted thermostability as well as substrate range. Auriferous (gold) nanozymes possess remarkable enzyme-like properties, such as reductase, peroxidase, superoxide dismutase, oxidase, and catalase. This characteristic makes them a strong competitor for possible applications in the fields of biomedicine as well as biochemical analysis, especially when compared to natural enzymes, along with their simple manufacturing, adaptable features, biocompatibility, and affordability. This review evaluates the factors that affect the catalytic activity of auriferous nanozymes. We offer a thorough investigation of their diagnostic applications, including detecting cancer, microorganisms, glucose, cysteine, and uric acid. Furthermore, we delve into the applications of gold nanozyme in therapeutics including chemodynamic therapy, radiotherapy, and photothermal therapy. In contrast to previous review, our review highlights various advantages of auriferous nanozymes in diagnostics and therapies and provides novel insights into the diverse applications of gold nanozymes encompassing current research studies.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142350568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MoS₂high temperature sensitive element with a single Si₃N₄protective layer. 带有单层 Si3N4 保护层的 MoS2 高温敏感元件。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-08 DOI: 10.1088/1361-6528/ad844e

Lingbing Kong, Yuning Li, Yuqiang Wang, Tao Deng

{"title":"MoS2high temperature sensitive element with a single Si3N4protective layer.","authors":"Lingbing Kong, Yuning Li, Yuqiang Wang, Tao Deng","doi":"10.1088/1361-6528/ad844e","DOIUrl":"https://doi.org/10.1088/1361-6528/ad844e","url":null,"abstract":"Temperature sensors find extensive applications in industrial production, defense, and military sectors. However, conventional temperature sensors are limited to operating temperatures below 200°C and are unsuitable for detecting extremely high temperatures. In this paper, a method for thermal protection of molybdenum disulfide (MoS2) films is proposed and a MoS2 high temperature sensor is prepared. By depositing a monolayer of Si3N4 onto MoS2, not only is the issue of high-temperature oxidation effectively addressed, but also the contamination by impurities that could potentially compromise the performance of MoS2 is prevented. Moreover, the width of the Schottky barrier of metal/MoS2 is reduced by using PECVD deposition of 400 nm Si3N4 to form an ohmic contact, which improves the electrical performance of the device by three orders of magnitude. The sensor exhibits a positive temperature coefficient measurement range of 25 to 550°C, with a maximum temperature coefficient of resistance (TCR) of 0.32%·°C-1. The thermal protection method proposed in this paper provides a new idea for the fabrication of high-temperature sensors, which is expected to be applied in the high-temperature field.&#xD.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142391990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate. 在碲化镉（001）衬底上进行面内碲化镉汞纳米结构的选择性区域外延。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-08 DOI: 10.1088/1361-6528/ad7ff4

N Chaize, X Baudry, P-H Jouneau, E Gautier, J-L Rouvière, Y Deblock, J Xu, M Berthe, C Barbot, B Grandidier, L Desplanque, H Sellier, P Ballet

{"title":"Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate.","authors":"N Chaize, X Baudry, P-H Jouneau, E Gautier, J-L Rouvière, Y Deblock, J Xu, M Berthe, C Barbot, B Grandidier, L Desplanque, H Sellier, P Ballet","doi":"10.1088/1361-6528/ad7ff4","DOIUrl":"10.1088/1361-6528/ad7ff4","url":null,"abstract":"Semiconductor nanowires (NWs) are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO2mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <110>, <11¯0>, or <100> direction, the deposited thickness, and the growth temperature (GT). Several micron long in-plane NWs can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a GT as low as 140 °C and growth rate up to 0.5 monolayer per second. For <110> oriented NWs, the center of the nanostructure exhibits a trapezoidal shape with {111}B facets and two grains on the sides, while <11¯0> oriented NWs show {111}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe NW. Measurements of the resistance with four-point scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142350578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear electronic devices on single-layer CVD graphene for thermistors. 用于热敏电阻的单层 CVD 石墨烯非线性电子器件。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-08 DOI: 10.1088/1361-6528/ad7f5e

Saraswati Behera

{"title":"Nonlinear electronic devices on single-layer CVD graphene for thermistors.","authors":"Saraswati Behera","doi":"10.1088/1361-6528/ad7f5e","DOIUrl":"10.1088/1361-6528/ad7f5e","url":null,"abstract":"In this article, we present simple, cost-effective, passive (non-gated) electronic devices based on single-layer (SL) chemical vapor deposited (CVD) graphene that show nonlinear and asymmetric current-voltage characteristics (CVCs) at ambient temperatures. Al2O3-Ti-Au contacts to graphene results in a nonlinear resistance to achieve nonlinearity in the CVC. Upon transfer to polyethylene terephthalate, the CVD-grown SL graphene shows mobility of 6200 cm2V-1S-1. We have observed both thermoelectric effect and thermoresistive sensing in the fabricated devices such as voltage and temperature concerning change in electronic power and resistance through asymmetric and nonlinear CVC. The device is stable both at low and high voltages (±200 mV to ±4 V) and temperatures (4 K - 300 K). Graphene-based thermosensing devices can be ultra-thin, cost-effective, non-toxic/organic, flexible, and high-speed for integration into future complementary metal-oxide semiconductor (CMOS) interface, and wearable self-power electronics. A strong negative temeperature coefficent of resistance is demonstrated in the realized nonlinear graphene-integrated resistors for its application in NTC thermistors.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142350576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of SiCN thin film interlayer for ZnO-based RRAM. SiCN 薄膜中间层对氧化锌基 RRAM 的影响。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-07 DOI: 10.1088/1361-6528/ad83d9

Woon-San Ko, Myeong-Ho Song, Jun-Ho Byun, Do-Yeon Lee, So-Yeon Kwon, Jong-Sin Hyun, Dong-Hyeuk Choi, Ga-Won Lee

{"title":"Effect of SiCN thin film interlayer for ZnO-based RRAM.","authors":"Woon-San Ko, Myeong-Ho Song, Jun-Ho Byun, Do-Yeon Lee, So-Yeon Kwon, Jong-Sin Hyun, Dong-Hyeuk Choi, Ga-Won Lee","doi":"10.1088/1361-6528/ad83d9","DOIUrl":"https://doi.org/10.1088/1361-6528/ad83d9","url":null,"abstract":"This study investigates the effect of silicon carbon nitride (SiCN) as an interlayer for ZnO-based resistive random access memory (RRAM). SiCN was deposited using plasma-enhanced chemical vapor deposition (PECVD) with controlled carbon content, achieved by varying the partial pressure of tetramethylsilane (4MS). Our results indicate that increasing the carbon concentration enhances the endurance of RRAM devices but reduces the on/off ratio. Devices with SiCN exhibited lower operating voltages and more uniform resistive switching behavior. Oxygen migration from ZnO to SiCN is examined by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses, promoting the formation of conductive filaments (CFs) and lowering set voltages. Additionally, we examined the impact of top electrode oxidation on RRAM performance. The oxidation of the Ti top electrode was found to reduce endurance and increase low resistive state (LRS) resistance, potentially leading to device failure through the formation of an insulating layer between the electrode and resistive switching material. The oxygen storage capability of SiCN was further confirmed through high-temperature stress tests, demonstrating its potential as an oxygen reservoir. Devices with a 20 nm SiCN interlayer showed significantly improved endurance, with over 500 switching cycles, compared to 62 cycles in those with a 5 nm SiCN layer. However, the thicker SiCN layer resulted in a notably lower on/off ratio due to reduced capacitance. These findings suggest that SiCN interlayers can effectively enhance the performance and endurance of ZnO-based RRAM devices by acting as an oxygen reservoir and mitigating the top electrode oxidation effect.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142391985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ag modified ZnO nanoflower gas sensitive sensor for selective detection of n-butanol. 用于选择性检测正丁醇的银修饰纳米氧化锌气敏传感器。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-07 DOI: 10.1088/1361-6528/ad7d14

Ai-Jing Wang, Zhen Jin, Yu-Ru Sun, Shu-Hao Zhou, Jie Li

{"title":"Ag modified ZnO nanoflower gas sensitive sensor for selective detection of n-butanol.","authors":"Ai-Jing Wang, Zhen Jin, Yu-Ru Sun, Shu-Hao Zhou, Jie Li","doi":"10.1088/1361-6528/ad7d14","DOIUrl":"10.1088/1361-6528/ad7d14","url":null,"abstract":"Ag modified ZnO nanoflowers were successfully prepared by sunlight induced solvent reduction method. The samples were characterized by x-ray diffractometer, field emission scanning electron microscope, transmission electron microscope and energy dispersive x-ray spectrum, and the results confirmed the presence of Ag nanoparticles on the ZnO nanoflower. The gas sensing performance of the materials was studied at different operating temperatures and different n-butanol concentrations. The results showed that the Ag modified ZnO nanoflower sensor responded to 50 ppm n-butanol up to 147.17 at 280 °C, and the Ag modified ZnO nanoflower sensor exhibited excellent repeatability, stability and response recovery time. In addition, different target gases were employed for the selectivity study of the Ag modified ZnO nanoflower. It can be found that the Ag modified ZnO nanoflower had good selectivity for n-butanol. The improved response of the Ag modified ZnO nanoflower sensor was attributed to the catalytic effect of Ag nanoparticles. The results indicate that the Ag modified ZnO nanoflower will become a very promising sensing material for n-butanol gas detection.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142291764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence. 硅上 Ge 和 SiGe 的纳米超外延：成分和封接对量子点光致发光的作用。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-07 DOI: 10.1088/1361-6528/ad7f5f

Diana Ryzhak, Johannes Aberl, Enrique Prado-Navarrete, Lada Vukušić, Agnieszka Anna Corley-Wiciak, Oliver Skibitzki, Marvin Hartwig Zoellner, Markus Andreas Schubert, Michele Virgilio, Moritz Brehm, Giovanni Capellini, Davide Spirito

{"title":"Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence.","authors":"Diana Ryzhak, Johannes Aberl, Enrique Prado-Navarrete, Lada Vukušić, Agnieszka Anna Corley-Wiciak, Oliver Skibitzki, Marvin Hartwig Zoellner, Markus Andreas Schubert, Michele Virgilio, Moritz Brehm, Giovanni Capellini, Davide Spirito","doi":"10.1088/1361-6528/ad7f5f","DOIUrl":"10.1088/1361-6528/ad7f5f","url":null,"abstract":"We investigate the nanoheteroepitaxy (NHE) of SiGe and Ge quantum dots (QDs) grown on nanotips (NTs) substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the NHE over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the NTs with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The NTs arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142350575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Establishment of a Raman nanosphere based immunochromatographic system for the combined detection of influenza A and B viruses' antigens on a single T-line. 建立基于拉曼纳米圈的免疫层析系统，用于在单一 T 线上联合检测甲型和乙型流感病毒抗原。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-04 DOI: 10.1088/1361-6528/ad7f61

Ziyue Li, Aolin Zhu, Binbin Zhao, Yongwei Zhang, Qian Zhang, Hao Zhou, Tingwei Liu, Jiutong Li, Xuelei Zhou, Qian Shi, Yongxin Li, Mengjie Liang, Xin Zhang, Dongmei Lu, Xinxia Li

{"title":"Establishment of a Raman nanosphere based immunochromatographic system for the combined detection of influenza A and B viruses' antigens on a single T-line.","authors":"Ziyue Li, Aolin Zhu, Binbin Zhao, Yongwei Zhang, Qian Zhang, Hao Zhou, Tingwei Liu, Jiutong Li, Xuelei Zhou, Qian Shi, Yongxin Li, Mengjie Liang, Xin Zhang, Dongmei Lu, Xinxia Li","doi":"10.1088/1361-6528/ad7f61","DOIUrl":"10.1088/1361-6528/ad7f61","url":null,"abstract":"A simple and rapid system based on Raman nanosphere (R-Sphere) immunochromatography was developed in this study for the simultaneous detection of Influenza A, B virus antigens on a single test line (T-line). Two types of R-Sphere with different characteristic Raman spectrum were used as the signal source, which were labeled with monoclonal antibodies against FluA, FluB (tracer antibodies), respectively. A mixture of antibodies containing anti-FluA monoclonal antibody and anti-FluB monoclonal antibody (capture antibody) was sprayed on a single T-line and goat anti-chicken IgY antibody was coated as a C-line, and the antigen solution with known concentration was detected by the strip of lateral flow immunochromatography based on surface-enhanced Raman spectroscopy (SERS). The T-line was scanned with a Raman spectrometer and SERS signals were collected. Simultaneous specific recognition and detection of FluA and FluB were achieved on a single T-line by analyzing the SERS signals. The findings indicated that the test system could identify FluA and FluB in a qualitative manner in just 15 minutes, with a minimum detection threshold of 0.25 ng ml-1, excellent consistency, and specificity. There was no interference with the other four respiratory pathogens, and it exhibited 8 times greater sensitivity compared to the colloidal gold test strip method. The assay system is rapid, sensitive, and does not require repetitive sample pretreatment steps and two viruses can be detected simultaneously on a single T-line by titrating one sample, which improves detection efficiency, and provide a reference for developing multiplexed detection techniques for other respiratory viruses.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142350571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal, mechanical, and electrical properties of Si-stacked nanosheet transistors using machine learning interatomic potentials. 利用机器学习原子间电位研究硅叠层纳米片晶体管的热学、机械和电学特性。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-04 DOI: 10.1088/1361-6528/ad8357

Mohamed Ahmed Saleh, Hamdy M Abdelhamid, Amr M Bayoumi

{"title":"Thermal, mechanical, and electrical properties of Si-stacked nanosheet transistors using machine learning interatomic potentials.","authors":"Mohamed Ahmed Saleh, Hamdy M Abdelhamid, Amr M Bayoumi","doi":"10.1088/1361-6528/ad8357","DOIUrl":"10.1088/1361-6528/ad8357","url":null,"abstract":"Thermal and mechanical properties play a key role in optimizing the performance of nanoelectronic devices. In this study, the lattice thermal conductivity (κL) and elastic constants of Si nanosheets at different sheet thicknesses were determined using recently developed machine learning interatomic potentials (MLIPs). A Si nanosheet with a minimum thickness of 10 atomic layers was used for model training to predict the properties of sheets with greater thicknesses. The training dataset was efficiently constructed using stochastic sampling of the potential energy surface (PES). Density functional theory (DFT) calculations were used to extractthe MLIP, which served as the basis for further analysis. The Moment Tensor Potential (MTP) method was used to obtain the MLIP in this study. The results showed that, at sub-6 nm sheet thickness, the thermal conductivity dropped to ∼ 7 % of its bulk value, whereas some stiffness tensor components dropped to ∼ 3 % of the bulk values. These findings contribute to the understanding of heat transport and mechanical behavior of ultrathin Si nanosheets, which is crucial for designing and optimizing nanoelectronic devices. The technological implications of the extracted parameters on nanosheet field-effect transistor (NS-FET) performance at advanced technology nodes were evaluated using TCAD device simulations.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142375696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A cubic perovskite fluoride anode with the surface conversion reactions dominated mechanism for advanced lithium-ion batteries. 用于先进锂离子电池的具有表面转换反应主导机制的立方过氧化物氟化物负极。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2024-10-04 DOI: 10.1088/1361-6528/ad7e34

Zhicheng Ju, Qilin Feng, Xinfeng Wang, Quanchao Zhuang, Yueli Shi, Jiangmin Jiang

{"title":"A cubic perovskite fluoride anode with the surface conversion reactions dominated mechanism for advanced lithium-ion batteries.","authors":"Zhicheng Ju, Qilin Feng, Xinfeng Wang, Quanchao Zhuang, Yueli Shi, Jiangmin Jiang","doi":"10.1088/1361-6528/ad7e34","DOIUrl":"10.1088/1361-6528/ad7e34","url":null,"abstract":"Perovskite fluorides are attractive anode materials for lithium-ion batteries (LIBs) because of their three-dimensional diffusion channels and robust structures, which are advantageous for the rapid transmission of lithium ions. Unfortunately, the wide band gap results in poor electronic conductivity, which limits their further development and application. Herein, the cubic perovskite iron fluoride (KFeF3, KFF) nanocrystals (∼100 nm) are synthesized by a one-step solvothermal strategy. Thanks to the good electrical conductivity of carbon nanotubes (CNTs), the overall electrochemical performance of composite anode material (KFF-CNTs) has been significantly improved. In particular, the KFF-CNTs deliver a high specific capacity (363.8 mAh g-1), good rate performance (131.6 mAh g-1at 3.2 A g-1), and superior cycle stability (500 cycles). Note that the surface conversion reactions play a dominant role in the electrochemical process of KFF-CNTs, together with the stable octahedral perovskite structure and nanoscale particle sizes achieving high ion diffusion coefficients. Furthermore, the specific lithium storage mechanism of KFF has been explored by the distribution of relaxation times technology. This work opens up a new way for developing cubic perovskite fluorides as high-capacity and robust anode materials for LIBs.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142308174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0