NanotechnologyPub Date : 2024-12-03DOI: 10.1088/1361-6528/ad960e
Nobuyuki Ishida, Takaaki Mano
{"title":"Quantitative theoretical analysis of the electrostatic force between a metallic tip and semiconductor surface in Kelvin probe force microscopy.","authors":"Nobuyuki Ishida, Takaaki Mano","doi":"10.1088/1361-6528/ad960e","DOIUrl":"10.1088/1361-6528/ad960e","url":null,"abstract":"<p><p>Theoretical analysis of the electrostatic force between a metallic tip and semiconductor surface in Kelvin probe force microscopy (KPFM) measurements has been challenging due to the complexity introduced by tip-induced band bending (TIBB). In this study, we present a method for numerically computing the electrostatic forces in a fully three-dimensional (3D) configuration. Our calculations on a system composed of a metallic tip and GaAs(110) surface revealed deviations from parabolic behavior in the bias dependence of the electrostatic force, which is consistent with previously reported experimental results. In addition, we show that the tip radii estimated from curve fitting of the theory to experimental data provide reasonable values, consistent with the shapes of tip apex observed using scanning electron microscopy. The 3D simulation, which accounted for the influence of TIBB, enables a detailed analysis of the physics involved in KPFM measurements of semiconductor samples, thereby contributing to the development of more accurate measurement and analytical methods.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142693320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-29DOI: 10.1088/1361-6528/ad958c
Giorgos Boras, Haotian Zeng, Jae-Seong Park, Huiwen Deng, Mingchu Tang, Huiyun Liu
{"title":"Quantum dots synthesis within ternary III-V nanowire towards light emitters in quantum photonic circuits: a review.","authors":"Giorgos Boras, Haotian Zeng, Jae-Seong Park, Huiwen Deng, Mingchu Tang, Huiyun Liu","doi":"10.1088/1361-6528/ad958c","DOIUrl":"10.1088/1361-6528/ad958c","url":null,"abstract":"<p><p>The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142687701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Friction-enhanced formation of Cu microwire on Si wafer.","authors":"Chenxu Liu, Yang Song, Zhimin Chai, Hongbo Zeng, Yu Tian, Yonggang Meng","doi":"10.1088/1361-6528/ad958d","DOIUrl":"10.1088/1361-6528/ad958d","url":null,"abstract":"<p><p>Tribological printing is emerging as a promising technique for micro/nano manufacturing. A significant challenge is enhancing efficiency and minimizing the need for thousands of sliding cycles to create nano- or microstructures (2018<i>ACS Appl. Mater. Inter.<b>10</b> 335-47, 2019 Nanotechnology<b>30</b> 302</i>). This study presents a rapid approach for forming Cu microwires on Si wafers through a friction method during the evaporation of an ethanol-based lubricant containing Cu nanoparticles. The preparation time is influenced by the volume of the lubricant added, with optimal conditions reducing the time to 300 s (600 sliding cycles) for producing Cu microwires with a thickness of 200 nm. Key aspects include the lubricating effect of ethanol on the friction pairs and the role of ethanol evaporation in the growth of Cu microwires. Successful formation requires a careful balance between microwire thickening and wear removal. The resulting Cu microwires demonstrate mechanical and electrical properties that make them suitable as micro conductors. This work provides a novel approach for fabricating conductive microstructures on Si surfaces and other curved surfaces, offering potential applications in microelectronics and sensor technologies.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142687644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-28DOI: 10.1088/1361-6528/ad9480
Farman Ullah, Sina Kazemian, Giovanni Fanchini
{"title":"Understanding the competing growth of 2D and 3D transition metal dichalcogenides in a chemical vapor deposition (CVD) reactor.","authors":"Farman Ullah, Sina Kazemian, Giovanni Fanchini","doi":"10.1088/1361-6528/ad9480","DOIUrl":"10.1088/1361-6528/ad9480","url":null,"abstract":"<p><p>The competing growth of two-dimensional (2D) and three-dimensional (3D) crystals of layered transition metal dichalcogenides (TMDCs) has been reproducibly observed in a large variety of chemical vapor deposition (CVD) reactors and demands a comprehensive understanding in terms of involved energetics. 2D and 3D growth is fundamentally different due to the large difference in the in-plane and out-of-plane binding energies in TMDC materials. Here, an analytical model describing TMDC growth via CVD is developed. The two most common TMDC structures produced via CVD growth (2D triangular flakes and 3D tetrahedra) are considered, and their formation energies are determined as a function of their growth parameters. By calculating the associated energies of 2D triangular or 3D tetrahedral flakes, we predict the minimum sizes of the critical nuclei of 2D triangular and 3D morphologies, and thereby determine the minimum realizable dimensions of TMDC, in the form of quantum dots. Analysis of growth rates shows that CVD favors 2D growth of MoS<sub>2</sub>between 820 K and 900 K and 3D growth over 900 K. Our model also suggests that the flow rates of TMDC precursors (metal oxide and sulfur) in a long, cylindrical CVD reactor are important parameters for attaining uniform growth. Our model provides a compressive analysis of TMDC growth via CVD. Therefore, it is a critical tool for helping to achieve reproducible growth of 2D and 3D TMDCs for a variety of applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142682446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-28DOI: 10.1088/1361-6528/ad933a
Dingli Wang, Rachel Chen, Nasim Anjum, Changhong Ke
{"title":"Thermal expansion of boron nitride nanotubes and additively manufactured ceramic nanocomposites.","authors":"Dingli Wang, Rachel Chen, Nasim Anjum, Changhong Ke","doi":"10.1088/1361-6528/ad933a","DOIUrl":"https://doi.org/10.1088/1361-6528/ad933a","url":null,"abstract":"<p><p>Controlling the thermal expansion of ceramic materials is important for many of their applications that involve high-temperature processing and/or working conditions. In this study, we investigate the thermal expansion properties of additively manufactured alumina that is reinforced with boron nitride nanotubes (BNNTs) over a broad temperature range, from room temperature to 900 °C. The coefficient of thermal expansion (CTE) of the BNNT-alumina nanocomposite increases with temperature but decreases with an increase in BNNT loading. The introduction of 0.6% BNNTs results in an approximate 16% reduction in the CTE of alumina. The observed significant CTE reduction of ceramics is attributed to the BNNT's low CTE and ultrahigh Young's modulus, and effective interfacial load transfer at the BNNT-ceramic interface. Micromechanical analysis, based on<i>in situ</i>Raman measurements, reveals the transition of thermal-expansion-induced interface straining of nanotubes, which shifts from compression to tension inside the ceramic matrix under thermal loadings. This study provides valuable insights into the thermomechanical behavior of BNNT-reinforced ceramic nanocomposites and contributes to the optimal design of ceramic materials with tunable and zero CTE.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 6","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142740005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-28DOI: 10.1088/1361-6528/ad947d
Artemisa Mazón-Martínez, Tupak García-Fernández, Marco Antonio Martínez-Fuentes, Citlali Sánchez-Aké
{"title":"Mapping nanoparticle formation and substrate heating effects: a fluence-resolved approach to pulsed laser-induced dewetting.","authors":"Artemisa Mazón-Martínez, Tupak García-Fernández, Marco Antonio Martínez-Fuentes, Citlali Sánchez-Aké","doi":"10.1088/1361-6528/ad947d","DOIUrl":"10.1088/1361-6528/ad947d","url":null,"abstract":"<p><p>This study investigates the fluence-dependent evolution of gold nanoparticles formed through single nanosecond pulsed laser dewetting of a gold thin film on a fused silica substrate. By employing a well-defined Airy-like laser spatial profile and reconstructing scanning electron microscope images across the irradiation spot into a panoramic view, we achieve a detailed continuous analysis of the nanoparticle formation process. Our morphological analysis, combined with finite element thermal simulations directly correlated with the applied fluence, identifies two distinct thresholds. The first threshold corresponds to the dewetting of the gold film at its melting point, resulting in large, sparse nanoparticles. The second threshold, where the substrate temperature reaches values near its melting point, leads to the formation of numerous small nanoparticles and a significant increase in coverage area. Notably, the formation of these small nanoparticles is attributed to substrate heating, which alters the interaction between the molten gold film and the substrate, increasing adhesion. Contact angle measurements of the nanoparticles confirm this change, revealing a shift in wettability, and highlighting the crucial role of substrate heating in modulating the interactions leading to nanoparticle formation. Our findings underscore the intricate interplay between laser fluence, material properties, and substrate interactions in pulsed laser dewetting, with the well-defined laser profile offering valuable insights into these dynamics.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142682439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Flexible pressure sensor with metallic reinforcement and graphene nanowalls for wearable electronics device.","authors":"Jingzhe Zhang, Honglie Shen, Weibiao Mao, Zehui Wang, Bingjie Liao, Yufang Li, Tianru Wu","doi":"10.1088/1361-6528/ad93df","DOIUrl":"10.1088/1361-6528/ad93df","url":null,"abstract":"<p><p>In recent years, flexible pressure sensors have been seen widespread adoption in various fields such as electronic skin, smart wearables, and human-computer interaction systems. Owing to the electrical conductivity and adaptability to flexible substrates, vertical graphene nanowalls (VGNs) have recently been recognized as promising materials for pressure-sensing applications. Our study presented the synthesis of high-quality VGNs via plasma enhanced chemical vapor deposition and the incorporation of a metal layer by electron beam evaporation, forming a stacked structure of VGNs/Metal/VGNs. Metal nanoparticles attached to the edges and surfaces of graphene nanosheets can alter the charge transport paths within the material to enhance the responsiveness of the sensor. This layered structure effectively fulfilled the requirements of flexible pressure sensors, exhibiting high sensitivity (40.15 kPa<sup>-1</sup>), low response time (88 ms), and short recovery time (97 ms). The pressure sensitivity remained intact even after 1000 bending cycles. Additionally, the factors contributing to the impressive pressure-sensing performance of this composite were found and its capability to detect human pulse and finger flexion signals was demonstrated, making it a promising candidate for applications of wearable electronics devices.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142668526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-27DOI: 10.1088/1361-6528/ad97c3
Sheng-Kuei Chiu, Li-Ting Hong, Rong-Fuh Louh
{"title":"Deposition of VS2/MoS2 bilayer layers of 2D material on nickel inverse opal structural substrates by SILAR and ECD processes as supercapacitor electrodes.","authors":"Sheng-Kuei Chiu, Li-Ting Hong, Rong-Fuh Louh","doi":"10.1088/1361-6528/ad97c3","DOIUrl":"https://doi.org/10.1088/1361-6528/ad97c3","url":null,"abstract":"<p><p>The composition, microstructure, and electrochemical properties of the two kinds of thin film electrode materials, namely VS2/MoS2/Ni-IOS and VS2/MoS2/ Ni-foam, were analyzed. The research results indicate that the self-assembled photonic crystal templates with adjusted EPSA processing parameters (100 V/cm; 7 min) would lead to an FCC closest-packed structure. Metallic nickel inverse opal structure (IOS) photonic crystals whose thickness can be freely regulated simply by electrochemical deposition time. VS2 and MoS2 are 2D materials with excellent electrochemical properties. We employed them as the electroactive material in this study and deposited them onto Ni-IOS surfaces to form a composite of VS2/MoS2/Ni-IOS electrode materials. The specimens exhibited an excellent specific capacitance (2,180 F/g) at a charge-discharge current density of 5 A/g. After the 2,000 cycles during the life test, the sample can still retain the original specific capacitance value by 72.3%. The inverse opal structure photonic crystal substrate produced in this work is designed as VS2/MoS2/Ni-IOS supercapacitor electrode materials, which can offer a significant technical contribution to the application of 2-D materials in high-performance supercapacitors currently.
.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142739998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-25DOI: 10.1088/1361-6528/ad9158
Cheng-Lun Hsin, Yu-Ting Liu, Yue-Yun Tsai
{"title":"Thermal conductivity suppression in ZnO with AlZn<sub>2</sub>O<sub>4</sub>and ZnP<sub>2</sub>for thermoelectric applications.","authors":"Cheng-Lun Hsin, Yu-Ting Liu, Yue-Yun Tsai","doi":"10.1088/1361-6528/ad9158","DOIUrl":"10.1088/1361-6528/ad9158","url":null,"abstract":"<p><p>In this study, intrinsic ZnO powder was sintered and intercalated with particles. The resulting powder, along with a commercial p-type product, was consolidated into bulk materials, and their thermal conductivity was measured across a temperature range of 350 K-700 K. The thermal conductivity of the commercial p-type ZnO was found to be lower than that of intrinsic ZnO, attributed to controlled doping. Notably, our demonstration illustrated that the thermal conductivity can be reduced by a factor of 5-10 in the presence of AlZn<sub>2</sub>O<sub>4</sub>and ZnP<sub>2</sub>precipitates. This methodology presents a feasible approach for the future design of ZnO-based thermoelectric materials, particularly for thermal heat scavenging applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142624357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NanotechnologyPub Date : 2024-11-25DOI: 10.1088/1361-6528/ad4ebb
Takhee Lee, Kookrin Char, Gwan-Hyoung Lee
{"title":"Focus on Institute of Applied Physics at Seoul National University.","authors":"Takhee Lee, Kookrin Char, Gwan-Hyoung Lee","doi":"10.1088/1361-6528/ad4ebb","DOIUrl":"https://doi.org/10.1088/1361-6528/ad4ebb","url":null,"abstract":"","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 6","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142710633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}