Nanotechnology最新文献_第7页

Green materials in semiconductors: perspective from the IRDS beyond-CMOS roadmap.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-19 DOI: 10.1088/1361-6528/adb041

Akiko Ueda, Hiroyuki Akinaga, Sapan Agarwal, Joseph A Hagmann, Shamik Das, Matthew J Marinella, An Chen

引用次数: 0

Preparation of aggregation-free ZnPc-doped nanophotosensitizers for highly efficient photodynamic therapy.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-18 DOI: 10.1088/1361-6528/adb437

Yafei Zhang, Bingyang Bo, Jinglei Qin, Bei Liu, Hong-Shang Peng

{"title":"Preparation of aggregation-free ZnPc-doped nanophotosensitizers for highly efficient photodynamic therapy.","authors":"Yafei Zhang, Bingyang Bo, Jinglei Qin, Bei Liu, Hong-Shang Peng","doi":"10.1088/1361-6528/adb437","DOIUrl":"10.1088/1361-6528/adb437","url":null,"abstract":"Zinc phthalocyanine (ZnPc), a promising second-generation photosensitizer, suffers from decreased quantum yield of singlet oxygen due to poor water solubility and prone-to-aggregation nature in both physiological environment and solid matrix. To address this issue, in this work we reported a simple ligand-assisted reprecipitation method to prepare aggregation-free ZnPc-doped nanoparticles (NPs). Specifically, a short-chain ligand hexylamine was introduced to coordinate with ZnPc during reprecipitation, so that to alleviate ZnPc aggregation in the polymeric nanomatrix. As a consequence, the as-prepared ZnPc-loaded NPs with an optimal loading content of 4 wt.% acquired a high singlet oxygen quantum yield (ΦΔ) of 0.5, which was comparable to that of ZnPc monomer (ΦΔ= 0.55). Moreover, 10 wt.% ZnPc-loaded NPs could still retain a singlet oxygen quantum yield of 0.38. Taking advantage of the aggregation-free nano-photosensitizers (NPSs), efficient photodynamic therapy effect was achieved on HeLa cells upon 660 nm photo-irradiation with an ultra-low light dose (1.8 J cm-2). This study not only presented a high efficient ZnPc-based NPS, but also proposed a new strategy to reduce the aggregation of metal complex in solid matrix through ligand coordination.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143391424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Review on efficient P3CT and P3HT HTL based perovskite solar cells.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-18 DOI: 10.1088/1361-6528/adb436

Anjali Chandel, Po-Wen Tang, Sheng Hsiung Chang

引用次数: 0

Recent advances in localized surface plasmon resonance (LSPR) sensing technologies.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-17 DOI: 10.1088/1361-6528/adb6a4

Xunjie Lin, Yunfei Luo, Dongxian Li, Yue Li, Tiancheng Gong, Chengwei Zhao, Ruiqi Duan, Weisheng Yue, Changtao Wang

引用次数: 0

Electronic structures of atomic silicon dimer wires as a function of length.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-17 DOI: 10.1088/1361-6528/adafae

Furkan M Altincicek, Lucian Livadaru, Christopher C Leon, Taras Chutora, Max Yuan, Roshan Achal, Jeremiah Croshaw, Jason Pitters, Robert Wolkow

引用次数: 0

Two-step growth procedure for homogeneous GaN NW arrays on graphene.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-17 DOI: 10.1088/1361-6528/adb3ad

Dyhia Tamsaout, Edmond Cambril, Laurent Travers, Ali Madouri, Noëlle Gogneau, Maria Tchernycheva, Jean-Christophe Harmand, Ludovic Largeau

引用次数: 0

Low-temperature growth of wafer-scale amorphous boron nitride films with low-dielectric-constant and controllable thicknesses.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-13 DOI: 10.1088/1361-6528/adb293

Hang Zheng, Zihao Wan, Wenna Tang, Xianlei Huang, Zhenjia Zhou, Weilin Liu, Chao Wang, Guowen Yuan, Libo Gao

{"title":"Low-temperature growth of wafer-scale amorphous boron nitride films with low-dielectric-constant and controllable thicknesses.","authors":"Hang Zheng, Zihao Wan, Wenna Tang, Xianlei Huang, Zhenjia Zhou, Weilin Liu, Chao Wang, Guowen Yuan, Libo Gao","doi":"10.1088/1361-6528/adb293","DOIUrl":"10.1088/1361-6528/adb293","url":null,"abstract":"Amorphous boron nitride (aBN) films, with extremely low relative dielectric constant (κ) and chemical inertness, are excellent insulation and packaging materials for electronic device interconnection. It is of great significance to prepare the low-κaBN films with controllable thickness, but there are still some limitations to achieve the goal. In this study, we succeed in growing wafer-scale aBN films with specific thicknesses from 1.2 to 4.0 nm by varying the growth time and temperature. The thickness of the films increases linearly with growth time and the crystallinity of BN films is precisely controlled by the growth temperature. The preferred temperature for aBN films ranges from 200°C to 400°C. Raman spectroscopy, x-ray photoelectron spectroscopy and transmission electron microscope all confirm the amorphous feature. These films are wafer-scale uniformity and have an ultra-flat surface, with excellent thermal stability and corrosion resistance. Particularly, the growth temperature affects theκvalue and breakdown voltage of aBN films. The aBN films grown at 200°C have the lowestκvalue of 1.66 at 100 kHz, along with the breakdown field strength of 5.5 MV cm-1. We believe that wafer-level aBN films with various thicknesses can bring new opportunities for the development and application of nanoscale electrical devices.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143255918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-powered wireless sensing technologies based on triboelectric nanogenerator.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-13 DOI: 10.1088/1361-6528/adb1ed

Jiawei Si, Jin Yang, Zhaofeng Zhu, Zhukun Li, Haiyang Lai, Lei Han

引用次数: 0

Mitigating shuttle effect of the Li||S battery with Se-deficient commercial MoSe₂flakes.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-13 DOI: 10.1088/1361-6528/adb1ee

Yao He, Lijing Wang, Sheng Yang, Shaowei Zhang, Hongfang Du, Dandan Cui, Liangxu Lin

{"title":"Mitigating shuttle effect of the Li||S battery with Se-deficient commercial MoSe2flakes.","authors":"Yao He, Lijing Wang, Sheng Yang, Shaowei Zhang, Hongfang Du, Dandan Cui, Liangxu Lin","doi":"10.1088/1361-6528/adb1ee","DOIUrl":"10.1088/1361-6528/adb1ee","url":null,"abstract":"In lithium-sulfur batteries (LSBs), the dissolution of lithium polysulfides (LiPSs) triggers the shuttle effect to lose active materials irreversibly, leading to the fast deterioration of electrochemical performance. Rational designs on the separator membrane could mitigate the shuttle effect. However, the development of efficient separators economically remains a challenging task, aggressively limiting the commercial use of LSBs. This work reports the engineering of commercial molybdenum diselenides (MoSe2) flakes to mitigate the shuttle effect of LSBs, by forming rich Se vacancies via a potassium (K) intercalation and de-intercalation reaction. The Se vacancy in MoSexflakes significantly enhances the adsorption capacity of LiPSs and accelerates the Li+diffusion kinetics, thereby alleviating the shuttle effect and enhancing the energy storage performance. This directly improves the energy storage performance of the LSBs by incorporating the MoSexflakes into the separator membrane, giving a high capacity retention rate of 94.6% at 2 C after 500 cycles, with a reversible specific capacity as high as 452 mAh g-1. This work offers a new strategy for the design and synthesis of vacancy rich transition metal chalcogenides for high-performance LSBs and beyond.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143190051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate-tunable photodetectors based on MoTe₂/MoS₂heterostructures anti-ambipolar transistors. 基于MoTe2/ mos2异质结构反双极晶体管的门可调谐光电探测器。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-12 DOI: 10.1088/1361-6528/ada9f3

Cong Yan, Hongxia Liu, Hao Yu, Hangtian Yang

{"title":"Gate-tunable photodetectors based on MoTe2/MoS2heterostructures anti-ambipolar transistors.","authors":"Cong Yan, Hongxia Liu, Hao Yu, Hangtian Yang","doi":"10.1088/1361-6528/ada9f3","DOIUrl":"10.1088/1361-6528/ada9f3","url":null,"abstract":"Anti-ambipolar transistors (AATs) are considered as a breakthrough technology in the field of electronics and optoelectronics, which is not only widely used in diverse logic circuits, but also crucial for the realization of high-performance photodetectors. The anti-ambipolar characteristics arising from the gate-tunable energy band structure can produce high-performance photodetection at different gate voltages. As a result, this places higher demands on the parametric driving range (ΔVg) and peak-to-valley ratio (PVR) of the AAT. Here, we demonstrate a high-performance photodetector with anti-ambipolar properties based on a van der Waals heterojunction of MoTe2/MoS2. Flexible modulation of carrier concentration and transport by gate voltage achieves a driving voltage range ΔVgas high as 38.4 V and a PVR of 1.6 × 102. Most importantly, MoTe2/MoS2exhibits a pronounced gate-tunable photoresponse, which is attributed to the modulation of photogenerated carrier transport by gate voltage. The MoTe2/MoS2heterojunction photodetector exhibits excellent performance, including an impressive responsivity of 17 A W-1, a high detectivity of 4.2 × 1011cm Hz1/2W-1, an elevated external quantum efficiency of 4 × 103%, and a fast response time of 21 ms. Gate-tunable photodetectors based on MoTe2/MoS2heterostructures AAT have potential to realize optoelectronic devices with high performance, providing a novel strategy to achieve high-performance photodetection.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142984142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0