Nanotechnology最新文献_第7页

Preparation of Pt cluster-modified CdS nanorod via galvanic replacement reaction for photocatalytic hydrogen evolution. 光催化析氢电取代反应制备Pt簇修饰CdS纳米棒。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-09 DOI: 10.1088/1361-6528/ae5974

Jiaqi Wang, Jinhua Xiong, Zimo Chen, Yan Dong

{"title":"Preparation of Pt cluster-modified CdS nanorod via galvanic replacement reaction for photocatalytic hydrogen evolution.","authors":"Jiaqi Wang, Jinhua Xiong, Zimo Chen, Yan Dong","doi":"10.1088/1361-6528/ae5974","DOIUrl":"10.1088/1361-6528/ae5974","url":null,"abstract":"A novel galvanic replacement reaction (GR) method was developed for preparing Pt cluster-modified CdS nanorod (NR) photocatalysts with enhanced hydrogen evolution performance. The as-prepared CdS NR synthesized via a hydrothermal method was calcined to create an oxide surface layer, which was induced to generate Cd0by photogenerated electrons. GR was completed by the reduction of Pt precursors into Pt clusters by Cd0, achieving a targeted deposition of Pt on the active sites of CdS. Structural and spectroscopic characterizations (x-ray diffraction, transmission electron microscopy, x-ray photoelectron spectroscopy, Raman, and UV-vis) confirmed the formation of highly dispersed Pt clusters on CdS NR. The optimal photocatalyst (CdS/2%Pt-GR) was achieved using PtCl4as the precursor with a 2 wt% loading. CdS/2%Pt-GR exhibited a hydrogen evolution rate of 237.7μmol h-1in the lactic acid solution, 2.6, 13.3, and 7.1 times that of CdS-NR-air-2%Pt-CR, CdS-NR-air-2%Pt-PD, and CdS-NR-2%Pt-PD, respectively. Moreover, CdS/2%Pt-GR possessed an excellent photocatalytic stability.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147593345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First principles calculations of electronic structure and optical properties of high-throughput multiple-element-doped In₂O₃by HSE06 method. 用HSE06方法计算高通量多元素掺杂In2O3的电子结构和光学性质的第一性原理。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-09 DOI: 10.1088/1361-6528/ae5976

Yaxin Gao, Liang Sun, Jie Chen, Wenzhen Xu, Wenyan Zhai, Yong Zhou, Jianhong Peng

{"title":"First principles calculations of electronic structure and optical properties of high-throughput multiple-element-doped In2O3by HSE06 method.","authors":"Yaxin Gao, Liang Sun, Jie Chen, Wenzhen Xu, Wenyan Zhai, Yong Zhou, Jianhong Peng","doi":"10.1088/1361-6528/ae5976","DOIUrl":"10.1088/1361-6528/ae5976","url":null,"abstract":"In2O3is a semiconductor oxide that exhibits exceptional optoelectronic potential owing to its wide bandgap, low resistivity. In this study, the hybrid functional Heyd-Scuseria-Ernzerhof (HSE06) method was systematically employed within the framework of first-principles calculations to investigate the electronic and optical properties of both pristine and doped In2O3(Mo, Ti, N, Ga, Ir, La, and W). The results demonstrate that the HSE06 method accurately predicts the band structure of In2O3, yielding a fundamental bandgap of 2.168 eV, which closely agrees with experimental values. Furthermore, Mo, W, and Ga doping were found to significantly enhance the optoelectronic performance of In2O3. Specifically, Ga doping increases the intrinsic bandgap and extends optical absorption into the visible range, while Mo and W doping introduce low-energy absorption peaks and improve conductivity through modulation of the band structure. Mechanistic insights based on the density of states and dielectric functions reveal that interband transitions dominate the optical response, as evidenced by the reflection spectra and energy loss function (Im) profiles. Notably, Ga-doped In2O3exhibits optimized visible-light harvesting capability, offering valuable insights for the design of high-performance transparent conductive oxides. These findings establish a computational framework for tailoring In2O3-based materials for applications in photovoltaics and optoelectronic devices through strategic doping.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147593371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved photocatalytic CO₂reduction performance of TiO₂/TiC(O) multilayer heterojunction induced by GO composite aerogel. 氧化石墨烯复合气凝胶诱导TiO2/TiC(O)多层异质结光催化还原co2性能的提高

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-08 DOI: 10.1088/1361-6528/ae553a

Wenxiao Zhang, Yue Shen, Haoyu Yuan, Long Zhang, Feng Gu, Linjun Wang

{"title":"Improved photocatalytic CO2reduction performance of TiO2/TiC(O) multilayer heterojunction induced by GO composite aerogel.","authors":"Wenxiao Zhang, Yue Shen, Haoyu Yuan, Long Zhang, Feng Gu, Linjun Wang","doi":"10.1088/1361-6528/ae553a","DOIUrl":"10.1088/1361-6528/ae553a","url":null,"abstract":"Photocatalytic CO2reduction (PCR) has attracted significant attention for its potential in addressing energy crisis and combating carbon pollution. However, developing efficient and stable photocatalytic systems remains a persistent challenge in this field. Among various materials, titanium carbide (TiC) and its derivatives have demonstrated excellent PCR performance, showing great promise for industrial applications. In this paper, oxygen-doped TiC multilayer nanosheets (TiC(O)) were prepared by a high-temperature carbon thermal reduction method, using TiO2nano-powder and graphene oxide (n-TiO2/GO) composite aerogels as raw materials. And then, the TiO2/TiC(O) multilayer heterojunctions were constructed byin-situannealing process. The characterization results of x-ray diffraction, UV-Vis, and x-ray photoelectron spectroscopy (XPS) demonstrated that n-TiO2/GO composite aerogel could induce the growth of TiC(O) multilayer nanosheets with good PCR performance under high-temperature conditions. The TiO2/TiC(O) multilayer heterojunction exhibited enhanced specific surface areas, wider spectral response ranges, and higher photogenerated carrier separation efficiencies, which promoted the PCR performance of the material. Under the irradiation of xenon lamp, the optimal sample TiO2/TiC(O)-6 achieved a methane (CH4) yield of 43.54µmol∙g-1∙h-1, 2.55 times higher than that of the raw material TiC(O)-4.5 (17.08µmol∙g-1∙h-1), and showed excellent cycling stability. This study offers a potential pathway to developing green, stable, and efficient photocatalysts for PCR applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147491591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electro-thermal reliability analysis and performance evaluation of a 1.2 kV cascode GaN HEMT for high-power-density applications. 高功率密度1.2 kv级联GaN HEMT的电热可靠性分析与性能评价。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-08 DOI: 10.1088/1361-6528/ae5880

Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen

{"title":"Electro-thermal reliability analysis and performance evaluation of a 1.2 kV cascode GaN HEMT for high-power-density applications.","authors":"Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen","doi":"10.1088/1361-6528/ae5880","DOIUrl":"10.1088/1361-6528/ae5880","url":null,"abstract":"This work presents a comprehensive electro-thermal and reliability characterization of a 1.2 kV GaN high-electron-mobility transistor (HEMT) in a cascode configuration, systematically evaluating its potential for high-power applications. This study reveals key parametric temperature dependencies: a threshold voltage temperature coefficient of -1.16 mV °C-1, ensuring stable gate switching across a wide temperature range, and a distinct positive temperature coefficient of on-state resistance, which provides inherent current-sharing capability in parallel operation and mitigates thermal runaway risks. Dynamic analysis demonstrates nanosecond-scale switching speeds (rise time:tr= 14 ns; fall time:tf= 12 ns), low gate charge (10.5 nC), and low output charge (71 nC), indicating strong suitability for high-frequency zero-voltage-switching converters. Reliability assessment confirms excellent gate oxide integrity, evidenced by pA level gate leakage current, and defines safe operating boundaries under both transient and steady-state conditions through safety operating area analysis. These results not only provide a complete characterization profile of the high-voltage GaN HEMT but also offer physical insights into its operational mechanisms, supplying critical data and theoretical guidance for future application-oriented design and optimization.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147574942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An efficient orthogonal coupler for silicon photonics with the degenerate plasmonic modes. 简并等离子体模式硅光子学的高效正交耦合器。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-07 DOI: 10.1088/1361-6528/ae5881

Sheng Hsiung Chang

引用次数: 0

Stacking-engineered 2D CrSeBr multiferroic for promising quantum information processing applications. 用于有前途的量子信息处理应用的堆叠工程二维CrSeBr多铁性材料。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-07 DOI: 10.1088/1361-6528/ae549d

Ayushi Jain, Chandan Bera

{"title":"Stacking-engineered 2D CrSeBr multiferroic for promising quantum information processing applications.","authors":"Ayushi Jain, Chandan Bera","doi":"10.1088/1361-6528/ae549d","DOIUrl":"10.1088/1361-6528/ae549d","url":null,"abstract":"The realization of two-dimensional (2D) multiferroic materials offers promising opportunities for multifunctional electronic device design, especially in enabling the miniaturization and integration of nanodevices. In this work, we present a comprehensive first-principles study of CrSeBr, as a model system that integrates magnetic, ferroelectric, and ferrovalley functionalities. The monolayer CrSeBr exhibits spontaneous valley polarization of up to 26 meV that can be effectively controlled by reversing its magnetization. In the bilayer, these coupled properties can be further manipulated by interlayer sliding. The AA' stacking bilayer possesses an antiferromagnetic (AFM) ground state with band degeneracy at the conduction band minimum and valence band extrema near the K and K' valleys. Sliding from AA' to AB' (AC') stacking induces a magnetic phase transition from AFM to ferromagnetic order, while the further transition from AB' to AC' reverses both the ferroelectric and valley polarizations. By choosing a particular pathway, they demonstrate reduced interlayer sliding energy barriers 12.5 meV f.u.-1for ferroelectric switching, outperforming several existing 2D sliding ferroelectric materials. This highly tunable multiferroicity, enabled by controlling the interlayer stacking order via sliding, provides practical design principles for advanced multifunctional devices. Our findings underscore the vital role of low-dimensional multiferroics in van der Waals structures and pave the way for next-generation electronic, and valleytronic for quantum information processing applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147486706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single atom chemical identification of TMD defects in ambient conditions. 环境条件下TMD缺陷的单原子化学鉴定。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-02 DOI: 10.1088/1361-6528/ae5194

E J Dunn, A J Robson, R J Young, S P Jarvis

{"title":"Single atom chemical identification of TMD defects in ambient conditions.","authors":"E J Dunn, A J Robson, R J Young, S P Jarvis","doi":"10.1088/1361-6528/ae5194","DOIUrl":"10.1088/1361-6528/ae5194","url":null,"abstract":"The presence of defects in transition metal dichalcogenides (TMDs) can lead to dramatic local changes in their properties which are of interest for a range of technologies including quantum security devices, hydrogen production, and energy storage. It is therefore essential to be able to study these materials in their native environments, including ambient conditions. Here we report single atom resolution imaging of atomic defects in MoS2, WSe2and WS2monolayers carried out in ambient conditions using conductive atomic force microscopy (C-AFM). By comparing measurements from a range of TMDs we use C-AFM to identify the most likely atomic species for the defects observed and quantify their prevalence on each material, identifying oxygen chalcogen substitutions and transition metal substitutions as the most likely, and most common, defect types. Moreover, we demonstrate that C-AFM operated in ambient environments can resolve subtle changes in electronic structure with atomic resolution, which we apply to nitrogen-plasma doped WSe2monolayers, demonstrating the capability of C-AFM to resolve chemical details via electronic structure at the atomic scale.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147458750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Engineering droplet soliton dynamics in a gradient magnetic structure. 梯度磁结构中的工程液滴孤子动力学。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-01 DOI: 10.1088/1361-6528/ae4ef2

Milad Jalali, Haoxiang Xu, Yaowen Liu, Sylvain Eimer, Seyed Majid Mohseni

{"title":"Engineering droplet soliton dynamics in a gradient magnetic structure.","authors":"Milad Jalali, Haoxiang Xu, Yaowen Liu, Sylvain Eimer, Seyed Majid Mohseni","doi":"10.1088/1361-6528/ae4ef2","DOIUrl":"10.1088/1361-6528/ae4ef2","url":null,"abstract":"Magnetic droplet solitons-self-localised, strongly nonlinear spin-wave states-offer compact microwave sources in nanocontact (NC) spin-torque oscillators, yet their frequency agility and coherence remain sensitive to device geometry. Here we introduce a wedge-shaped (thickness-graded) free layer to engineer the internal demagnetising field and thereby control droplet nucleation, frequency and linewidth within a single device. Using micromagnetic simulations (MuMax3) of spin-valve with strong perpendicular anisotropy Co/Ni free layer, we place NC at systematically varied positions along the gradient and extract the formation of droplet as well as nucleation time and current and steady-state spectra. We find that thicker regions require higher current and exhibit wider hysteresis-like loops, while the nucleation frequency increases monotonically towards the thin side, accompanied by improved phase coherence. In dual-contact geometries, we map a thickness-gradient-dependent critical merging distance and its current scaling. These results establish thickness gradients as a practical, fabrication-compatible knob for tuning droplet dynamics and suggest gradient-engineered free layers for fast, coherent droplet-based microwave oscillators.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147390508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Air-stable Li₅FeO₄additive enabled by ultra-thin Li₂CO₃coating for advanced Li-ion batteries. 空气稳定的li5feo4添加剂由超薄li2co3涂层实现，用于先进的锂离子电池。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-01 DOI: 10.1088/1361-6528/ae53f0

Min Fan, Jiaolong Yan, Siwei Hu, Ruyi Fang, Wei Jiang, Jianping Xu, Xinhui Xia, Jun Zhang, Hui Huang, Zheyu Jin, Yang Xia, Wenkui Zhang

{"title":"Air-stable Li5FeO4additive enabled by ultra-thin Li2CO3coating for advanced Li-ion batteries.","authors":"Min Fan, Jiaolong Yan, Siwei Hu, Ruyi Fang, Wei Jiang, Jianping Xu, Xinhui Xia, Jun Zhang, Hui Huang, Zheyu Jin, Yang Xia, Wenkui Zhang","doi":"10.1088/1361-6528/ae53f0","DOIUrl":"10.1088/1361-6528/ae53f0","url":null,"abstract":"Li5FeO4(LFO) is widely recognized as an attractive prelithiation additive due to its cost-effective synthesis and high theoretical lithium-donor capacity (867 mAh g-1). However, its practical application is severely hindered by the air sensitivity. When exposed to air, LFO undergoes rapid Li+extraction, resulting in the spontaneous growth of insulating surface species (Li2CO3/LiOH) and significant irreversible capacity decay. Herein, we propose a surface-engineering strategy that employs high-pressure CO2treatment to construct a dense and conformal Li2CO3coating on LFO particles. This coating effectively blocks moisture/oxygen penetration while preserving efficient Li+/e-transport. Therefore, the coated LFO@Li2CO3has a high initial charge capacity of 708.6 mAh g-1after 1 h of air exposure, which is much higher than 483.6 mAh g-1of the uncoated LFO. Applied as a prelithiation additive in graphite||LiFePO4full cells, LFO@Li2CO3compensates active Li loss effectively, boosting the first-cycle discharge capacities by 8.9% at 1 C. The cells also exhibit enhanced rate capability (130.88 mAh g-1at 5 C) and cycling stability along with a 12.7% increase in energy density and 96.78% capacity retention over 200 cycles. This work demonstrates that a rationally designed Li2CO3coating significantly improves the air stability of LFO without compromising its prelithiation function, enabling its practical use in high-performance lithium-ion batteries.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147481248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analyses of recombination velocities at grain boundaries by cathodoluminescence: control of injection level and effect of grain-boundary inclination angle. 用阴极发光分析晶界复合速度：注入水平的控制和晶界倾角的影响。

IF 2.8 4区材料科学

Nanotechnology Pub Date : 2026-04-01 DOI: 10.1088/1361-6528/ae53ec

Luka Blazevic, Sebastian Weitz, Elisa Artegiani, Alessandro Romeo, Chang-Yun Song, Julia Horstmann, Daniel Abou-Ras

{"title":"Analyses of recombination velocities at grain boundaries by cathodoluminescence: control of injection level and effect of grain-boundary inclination angle.","authors":"Luka Blazevic, Sebastian Weitz, Elisa Artegiani, Alessandro Romeo, Chang-Yun Song, Julia Horstmann, Daniel Abou-Ras","doi":"10.1088/1361-6528/ae53ec","DOIUrl":"10.1088/1361-6528/ae53ec","url":null,"abstract":"Cathodoluminescence (CL) analyses of semiconductor materials are routinely employed for the determination of optoelectronic properties. By evaluating CL intensity profiles across grain boundaries (GBs) in polycrystalline semiconductors, the GB recombination velocities can be determined. However, in any CL experiment, control of the injection level is essential, and up to now, there has not been a corresponding, reliable approach. The present work provides such an approach consisting of the analysis of the CL intensity acquired at various beam energies and beam currents, combined with the simulation of the excess-charge carrier density at these beam parameters. It is shown that the CL intensity profiles and therefore, the GB recombination velocities differ strongly when acquiring CL intensities at low and at high injection. Moreover, the present work provides a model for the simulation of CL intensity profiles at GBs, taking into account an inclination angle of the GB with respect to the semiconductor surface. The simulation results show that GB recombination velocities are not affected by the GB inclination angle.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147481261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0