Nanotechnology最新文献_第6页

Engineering the decay time of Ti₃C₂T_xMXene by gold nanoparticle decoration.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-28 DOI: 10.1088/1361-6528/adb4f9

Gaurav Rajput, Ankita Rawat, Nitesh K Chourasia, Gaurav Jalendra, Govind Gupta, Aditya Yadav, P K Kulriya

{"title":"Engineering the decay time of Ti3C2TxMXene by gold nanoparticle decoration.","authors":"Gaurav Rajput, Ankita Rawat, Nitesh K Chourasia, Gaurav Jalendra, Govind Gupta, Aditya Yadav, P K Kulriya","doi":"10.1088/1361-6528/adb4f9","DOIUrl":"10.1088/1361-6528/adb4f9","url":null,"abstract":"MXenes, specifically Ti3C2Txhaving peculiar structural and electronic characteristics display not only high surface area, and excellent thermal and electrical conductivity but also have the potential for functionalization. The primary focus of this research is to control the decay time of gold nanoparticle (NP) (Au NP) decorated multilayer Ti3C2TxMXene (Au-Ti3C2Tx) synthesized by a simple two-step selective etching technique. Incorporation of Au NPs in the multilayer Ti3C2TxMXene leads to lattice expansion, micro-strain reduction, and crystallinity improvement, as confirmed by x-ray diffraction analysis. Observation of a well-developed G band in the Au-Ti3C2TxMXene across different Au concentrations by Raman spectroscopy investigations suggests the accumulation of graphitic carbon on the MXene surface which has greatly improved the charge transfer characteristic of the carbide layer. Furthermore, the Au-Ti3C2TxMXene exhibits promising optical properties for different concentrations of gold. The time-resolved photoluminescence spectroscopy studies displayed a reduction in the average decay time (τav) to ∼30% with increasing gold concentration from 100 to 150μl in Au NPs solution which is explained based on Au NPs induced surface plasmon resonance. The decoration of Au NPs facilitates the accumulation of carbon on the surface of MXene, resulting in enhanced crystallinity, reduced micro-strain, and decreased decay time. By engineering decay time through the decoration of noble metal NPs onto MXene, it becomes possible to fabricate highly efficient photodetectors and imaging devices. This is especially advantageous in applications where shorter decay times are desired.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143409373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Competitive mechanism between light extraction efficiency and sidewall passivated effect in the green micro-LEDs with varied thickness of Al₂O₃layer. 不同厚度 Al2O3 层的绿色微型 LED 中光萃取效率与侧壁钝化效应之间的竞争机制。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-27 DOI: 10.1088/1361-6528/adb852

Youcai Deng, Denghai Li, Yurong Dai, Zongmin Lin, Youqin Lin, Zongyuan Liu, Xinxing Chen, Hao-Chung Kuo, Zhong Chen, Shouqiang Lai, Tingzhu Wu

{"title":"Competitive mechanism between light extraction efficiency and sidewall passivated effect in the green micro-LEDs with varied thickness of Al2O3layer.","authors":"Youcai Deng, Denghai Li, Yurong Dai, Zongmin Lin, Youqin Lin, Zongyuan Liu, Xinxing Chen, Hao-Chung Kuo, Zhong Chen, Shouqiang Lai, Tingzhu Wu","doi":"10.1088/1361-6528/adb852","DOIUrl":"10.1088/1361-6528/adb852","url":null,"abstract":"In this study, green micro-light-emitting diodes (μ-LEDs) with Al2O3layers of varying thicknesses (0, 30, 60, and 90 nm) was fabricated using atomic layer deposition (ALD) technology. The optoelectronic characteristics of devices was measured and investigated. Current-voltage (I-V) measurements indicate that the ALD passivation layer effectively reduces leakage current. By applying theABC + f(n)model to analyze external quantum efficiency, the internal physical mechanisms that the ALD passivation layer enhances the optoelectronic performance of greenμ-LEDs was identified. Optical simulations demonstrated the transmittance relationship for different ALD passivation layer thicknesses, explaining improvements of light extraction efficiency. Furthermore, aging tests confirmed that the ALD passivation layer significantly increases the stability of greenμ-LEDs. These findings offer valuable insights for enhancing the luminous efficiency and reliability of greenμ-LEDs.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143468520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles computational screening of N₂gas adsorption by two-dimensional M₂N-MXene.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-27 DOI: 10.1088/1361-6528/adb6a7

Jia Yang, Liang Sun, Ruiqi Yan, Zhi He, Wenzhen Xu, Jianhong Peng

{"title":"First-principles computational screening of N2gas adsorption by two-dimensional M2N-MXene.","authors":"Jia Yang, Liang Sun, Ruiqi Yan, Zhi He, Wenzhen Xu, Jianhong Peng","doi":"10.1088/1361-6528/adb6a7","DOIUrl":"10.1088/1361-6528/adb6a7","url":null,"abstract":"The capture and utilization of N2has been limited by the development of high-performance N2capture and storage materials, and exploring the adsorption mechanism of N2and searching for new and efficient N2adsorption materials are the key to solving this technological challenge. In this study, the adsorption properties ofd4andd5two-dimensional M2N-MXene (M = Sc, Ti, V, Ni, Cu, Zn, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, and Cd) on N2molecules were investigated based on first principles. The results of cohesion energy, energy band structure and partition density indicate that the 15 M2Ns have excellent stability and electrical properties. In addition, with the lateral N2molecules obtaining a larger adsorption energy on most of the M2Ns than the cis-N2molecules, and the adsorption of N2depends on its interaction with thed-band electrons of M atoms. The adsorption energies, structural and electronic properties of the adsorption systems indicate that the stable structures of Ti2N and Zr2N have a strong binding capacity to N2, and the bond lengths of N2molecules increase significantly during the adsorption process, implying the weakening of the N-N triple bond, and therefore Ti2N and Zr2N are expected to be the most promising materials for N2trapping and catalytic reduction, and a simple kinetic thermal stability simulation was done, and it was found that the screened materials may desorb at 500 K. Moreover, the adsorption mechanism between N2and CO2is not only selective adsorption but also competitive adsorption. The study of N2adsorption on M2N-MXene provides theoretical guidance for the exploration of M2N in the field of nitrogen capture, storage and catalytic reduction, which can help to promote the economic value-added of nitrogen.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143441354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrigendum: Hybrid mesoporous silica nanospheres modified by poly (NIPAM-co-AA) for drug delivery (2019Nanotechnology 30 355604).

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-27 DOI: 10.1088/1361-6528/adb292

Keju Zhang, Dong Zhou, Zhiguo Wang, Yuhong Zhang, Peixin He

引用次数: 0

Regulating the hierarchical distribution of oxygen vacancies through Ce doping and NaBH₄reduction to enhance Co₂NiO₄supercapacitor performance.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-27 DOI: 10.1088/1361-6528/adb6a6

Jialu Zhang, Yan Wang, Wangfeng Cai, Zheng Wang, Tong Li, Peng Chen, Zhiyong Lu, Haoze Li, Hui Zhao, Youbin Yue

{"title":"Regulating the hierarchical distribution of oxygen vacancies through Ce doping and NaBH4reduction to enhance Co2NiO4supercapacitor performance.","authors":"Jialu Zhang, Yan Wang, Wangfeng Cai, Zheng Wang, Tong Li, Peng Chen, Zhiyong Lu, Haoze Li, Hui Zhao, Youbin Yue","doi":"10.1088/1361-6528/adb6a6","DOIUrl":"10.1088/1361-6528/adb6a6","url":null,"abstract":"In this study, Co2NiO4with a tunable and hierarchical distribution of oxygen vacancies was synthesized via Ce doping and NaBH4reduction to enhance its electrochemical performance. Ce doping through a hydrothermal method gave rise to lattice distortions and uniform oxygen vacancies at asymmetric sites, thereby improving the mobility and concentration of carriers within Co2NiO4. Moreover, the NaBH4reduction process brought about a considerable number of oxygen vacancies and surface-active sites, both of which contributed to the increased conductivity and specific capacitance. Characterization results indicated that the Ce/Co2NiO4-Vo nanosheets with surface burrs exhibited an abundant distribution of oxygen vacancies, resulting in a boost of the material's specific capacitance while ensuring stability. At a 1 A g-1current density, these nanosheets achieved a maximum specific capacitance of 1493.6 F g-1. When tested at 10 A g-1, Ce/Co2NiO4-Vo retained 88.47% of its initial capacitance after undergoing 5000 cycles. The synthesized Ce/Co2NiO4-Vo was further combined with activated carbon (AC) to form an asymmetric supercapacitor configuration known as Ce/Co2NiO4-Vo//AC, attaining an 80.51 Wh kg-1energy density at 800 W kg-1power density. This study provides innovative strategies and highlights advancements in the high-performance supercapacitors and energy storage solutions.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143441333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perspective: magnetic quantum sensors for biomedical applications. 透视：用于生物医学应用的磁量子传感器。

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-27 DOI: 10.1088/1361-6528/adb635

Kai Wu, Rui He

{"title":"Perspective: magnetic quantum sensors for biomedical applications.","authors":"Kai Wu, Rui He","doi":"10.1088/1361-6528/adb635","DOIUrl":"10.1088/1361-6528/adb635","url":null,"abstract":"With advancements in thin-film deposition, nanofabrication, and material characterization techniques, quantum devices leveraging nanoscale quantum phenomena have emerged across various fields, including quantum computing, sensing, communication, and metrology. Among these, quantum sensing harnesses the unique properties of quantum systems to achieve highly sensitive and precise measurements of physical quantities such as magnetic and electric fields, temperature, pressure, and even biological events. In this perspective, we highlight some popular magnetic quantum sensors used for magnetic sensing and imaging, and emerging spintronic quantum sensors that exploit the quantum mechanical properties of electron spin for similar applications. Most of the techniques discussed remain in lab-based stages, with limited preliminary data reported. However, the authors believe that, with continued progress in spintronics, these nano- and micro-scale spintronic devices-offering superior and unique magnetic quantum properties-could open new horizons in biomedical applications, including single-cell and single-molecule detection, large-scale protein profiling, sub-micrometer resolution medical imaging, and beyond.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143416875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Field-effect transistors based on nickel oxide doped with nitrogen semiconductor ferroelectrics for ultralow voltage switch (1μV), low subthreshold swing and memory.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-26 DOI: 10.1088/1361-6528/adb756

S Vulpe, M Dragoman, M Aldrigo, F Nastase, D Mladenovic, O Ligor, D Dragoman

引用次数: 0

Manganese valence modulation inδ-MnO₂via F-doping for enhanced electrocatalytic oxygen evolution reaction.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-25 DOI: 10.1088/1361-6528/adb6a8

Xinyu Shi, Libo Deng, Lingna Sun, Qianling Zhang, Xiangzhong Ren, Yongliang Li

{"title":"Manganese valence modulation inδ-MnO2via F-doping for enhanced electrocatalytic oxygen evolution reaction.","authors":"Xinyu Shi, Libo Deng, Lingna Sun, Qianling Zhang, Xiangzhong Ren, Yongliang Li","doi":"10.1088/1361-6528/adb6a8","DOIUrl":"10.1088/1361-6528/adb6a8","url":null,"abstract":"Manganese dioxide (MnO2) is recognized as a promising candidate for the oxygen evolution reaction (OER); however, its practical application is hindered by limited active sites and low electrical conductivity. Fluorine (F), known for its strong electron affinity and electronegativity, can modulate the surface electronic structure and physicochemical properties of catalysts. In this study, we synthesized MnO2nanosheets and fluorine-doped MnO2(F-MnO2) using simple hydrothermal and ion-exchange methods. We then assessed the influence of fluorine doping on the intrinsic OER activity and stability of these catalysts, as well as their underlying catalytic mechanisms. By manipulating the amount of fluorine introduced and the fluorination temperature, we explored the relationship between varying fluorine concentrations and OER performance. The experimental results show that F-MnO2exhibits higher OER activity than pristine MnO2. At a current density of 10 mA cm-2, the overpotential required for F-MnO2is merely 320 mV, substantially lower than that of pristine MnO2. This enhanced performance is ascribed to fluorine doping, which leads to an increased quantity of active Mn3+centers and oxygen vacancies, along with an expanded electrochemically active surface area. Furthermore, F-MnO2displays improved stability during the testing period. It maintains long-term stability for over 25 h, further corroborating the catalyst's excellent anti-oxidation and anti-corrosion properties in alkaline water electrolysis.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143441292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interface effect based nano-scale TiO_Xvertical synapse device for high-density integration in neuromorphic computing system.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-21 DOI: 10.1088/1361-6528/adad78

Seojin Cho, Geonhui Han, Chuljun Lee, Jiyong Woo, Daeseok Lee

引用次数: 0

2D WS₂monolayer preparation method and research progress in the field of optoelectronics.

IF 2.9 4区材料科学

Nanotechnology Pub Date : 2025-02-20 DOI: 10.1088/1361-6528/adaf2a

Zhihan Jin, Hao Liu, Tianci Huang, Liping Chen, Chee Leong Tan, Kaili Wang, Shancheng Yan

{"title":"2D WS2monolayer preparation method and research progress in the field of optoelectronics.","authors":"Zhihan Jin, Hao Liu, Tianci Huang, Liping Chen, Chee Leong Tan, Kaili Wang, Shancheng Yan","doi":"10.1088/1361-6528/adaf2a","DOIUrl":"10.1088/1361-6528/adaf2a","url":null,"abstract":"Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted considerable interest in materials science due to their exceptional electronic and optoelectronic characteristics, such as high carrier mobility and adjustable band gaps. Although extensive studies have been conducted on various TMDs, a significant gap persists in the understanding of synthesis methods and their effects on the practical use of monolayer tungsten disulfide (WS2) in optoelectronic devices. This gap is crucial, as the effective incorporation of WS2into commercial applications relies on the establishment of dependable synthesis techniques that guarantee the material's high quality and uniformity. In this review, we provide a detailed examination of the synthesis methods for monolayer WS2, emphasizing mechanical stripping, atomic layer deposition (ALD), and chemical vapor deposition (CVD). We discuss the benefits of each technique, including the uniform growth achievable with ALD at lower temperatures and the ability of CVD to generate large-area, high-quality monolayer. Furthermore, we review the performance of WS2in various electronic and optoelectronic applications, such as field-effect transistors, photodetectors, and logic devices. Our review suggest that ongoing improvements in film uniformity, compatibility with current semiconductor processes, and the long-term stability of WS2-based devices indicate a promising pathway for transitioning 2D WS2from laboratory settings to practical applications.","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143059842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0