Nanotechnology最新文献

{"title":"A Universal Strategy for Fabricating Bimetallic Nanoparticle/N-Doped Carbon Electrocatalysts Enabling Wide-Temperature Zinc-Air Batteries.","authors":"Wenxian Liu, Boyang Zhou, Jiale Dai, Yilin Zhao, Fangfang Wu, Wenhui Shi, Xiehong Cao","doi":"10.1088/1361-6528/ae09b3","DOIUrl":"https://doi.org/10.1088/1361-6528/ae09b3","url":null,"abstract":"<p><p>Zinc-air batteries (ZABs) exhibit significant potential for energy storage applications. However, their semi-open configuration renders the cathodic oxygen reduction reaction (ORR) highly susceptible to temperature fluctuations. Herein, we present a versatile strategy for preparing bimetallic nanoparticles embedded in nitrogen-doped carbon composites (BM NPs/NC), including FeCo, CuCo, NiCo, and MnCo NPs/NC. By modulating the chemical composition of the nanoparticle precursors, we optimize the catalytic performance of these composites for both oxygen reduction reaction (ORR) and oxygen evolution reaction (OER). Specifically, FeCo NPs/NC exhibits exceptional ORR activity, with a half-wave potential of 0.89 V, and high OER performance with a low overpotential of 0.324V at 10 mA cm-2. When integrated into ZABs, FeCo NPs/NC-based batteries demonstrate remarkable peak power density, specific capacity, and cycling stability (800 h). The batteries retain 97.6% and 95.8% of their room-temperature specific capacity at -20 °C and 60 °C, respectively, and exhibit excellent performance across a wide temperature range. This work highlights the potential of BM NPs/NC for practical applications in extreme environments.&#xD.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145125306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Near-infrared artificial synapse based on a pristine InGaAs nanowire synaptic transistor.","authors":"Haomiao Xu, Yanbin Yang, Yisen Li, Jun Deng, Guishuang Jiang, Xinghao Zhao, Lifan Shen","doi":"10.1088/1361-6528/ae0594","DOIUrl":"10.1088/1361-6528/ae0594","url":null,"abstract":"<p><p>The rapid advancements in the field of artificial intelligence have intensified the urgent need for low-power, high-speed artificial synaptic devices. Here, a near-infrared (NIR) artificial synaptic device is successfully realized based on pristine InGaAs nanowires (NWs), which achieves a paired-pulse facilitation of up to 119%. Additionally, a postsynaptic current (PSC) in memory storage behavior has been implemented by applying different voltage pulses along with continuous illumination of 1064 nm NIR light due to the memristor characteristics of the device. 42% enhancement of excitatory PSC is achieved in the InGaAs NW artificial synapse by raising the voltage of pulse stimulation. More importantly, a transition from short-term memory to long-term memory in biological synaptic memory behavior is realized by applying pulse stimulation of varying durations, thereby enabling the realization of complex synaptic behaviors in artificial synapses. This work demonstrates the application potential of pristine InGaAs NWs in sensitive optoelectronic artificial synapses, which offers significant reference values to explore an effective and facile approach for developing synapses based on low-dimensional nanomaterials in artificial intelligence systems and neuromorphic computing technology.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145033764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of hybrid 2D/quantum dot sensor materials for low-cost, uncooled mid-infrared sensing.","authors":"Rakina Islam, Mohammad M Al Mahfuz, Rodrigo Castillo-Garza, Dong-Kyun Ko","doi":"10.1088/1361-6528/ae0341","DOIUrl":"10.1088/1361-6528/ae0341","url":null,"abstract":"<p><p>Uncooled mid-wave infrared (MWIR) image sensors, which are compact, lightweight, and energy-efficient, are expected to take a dominant position in the future infrared market. As an alternative to traditional epitaxially-grown infrared semiconductors used in high-performance cryo-cooled MWIR imagers, the concept of hybrid sensor materials is gaining attention. Specifically, hybrid structures combining two-dimensional (2D) materials, known for their superior carrier transport properties, with colloidal quantum dots (QDs), which offer excellent optical properties, have shown record-high room-temperature infrared responsivities with spectral responses extending to short-wave infrared. The most significant potential of this new hybrid material technology lies in the underexplored MWIR spectral region. Herein, we discuss the design rules for realizing a MWIR hybrid 2D/QD sensor material and demonstrate its room temperature optical and electrical performance using proof-of-concept devices operating in the MWIR spectral region without gate biasing.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145001060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-sensitivity coreless fiber surface plasmon resonance refractive index sensor based on Au/TiO₂.","authors":"Xiaohan Wang, Hongyu Song, Yanpei Xu, Qi Wang","doi":"10.1088/1361-6528/ae01aa","DOIUrl":"10.1088/1361-6528/ae01aa","url":null,"abstract":"<p><p>Fiber-optic surface plasmon resonance (SPR) sensors play a critical role in applications requiring high sensitivity. This work proposes an SPR refractive index (RI) sensor based on a multimode-coreless-multimode fiber structure functionalized with Au/TiO₂nanofiber composites. Experimental results demonstrate that the TiO₂nanofiber/Au sensor achieves a sensitivity of 3687.65 nm RIU^-1and a figure of merit of 29.50 RIU^-1within the RI range of 1.333-1.380. These values represent a 2.05-fold enhancement over conventional Au-film sensors. The synergistic design optimizes multiple performance metrics, enabling broad applications in chemical detection, biosafety monitoring, micro-molecule analysis, biomedical sensing, and other high-sensitivity detection scenarios.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144961906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic insights into the vanadium-resistance mechanism in Y-zeolite catalysts reinforced with lanthanum-based components.","authors":"Tao Liu, Liwei Wang, Tulai Sun, Penggang Lv, Jialing Li, Zhongting Hu, Junyi Zhang, Gang Wang, Yonghe Li, Xionghou Gao","doi":"10.1088/1361-6528/ae04f1","DOIUrl":"10.1088/1361-6528/ae04f1","url":null,"abstract":"<p><p>In fluid catalytic cracking (FCC) processes, vanadium is a primary harmful feedstock contaminant that deactivates catalysts by forming vanadate species which corrode the zeolite framework and damage catalyst structure. Introducing vanadium capture agents is an effective way to enhance the catalytic performance, but the mechanism of the interaction has not yet been fully understood. This study demonstrates that lanthanum-based additives significantly improve vanadium resistance in FCC catalysts. Under severe contamination (6000 ppm V), La-modified catalysts exhibited 5.81% higher conversion and 0.49% lower coke yield compared to conventional catalysts. Advanced scanning transmission electron microscopy characterization revealed that La components chemically trap vanadium through<i>α</i>-LaVO₄formation, effectively protecting the Y-zeolite framework from structural damage. The research provides both fundamental insights into the La-V interaction mechanism and practical guidance for developing high-performance FCC catalysts for processing heavy-metal-contaminated feedstocks. By combining macro-scale catalytic evaluation with atomic-scale characterization, this work establishes a robust approach for FCC catalyst optimization.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145030248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application research of high fluorescence anti-counterfeiting ink based on L-histidine nitrogen-doped cellulose-derived carbon quantum dots.","authors":"Zhongqiang Min, Qifeng Chen, Xuchao Chen","doi":"10.1088/1361-6528/ae0596","DOIUrl":"https://doi.org/10.1088/1361-6528/ae0596","url":null,"abstract":"<p><p>In this study, L-His-N-carbon quantum dots (CQDs) were synthesized via a microwave-assisted method using homemade hardwood cellulose with a dryness of 20% as the carbon source and L-histidine as the nitrogen source. The results demonstrated that when the mass ratio of cellulose to L-histidine was 1:5 and the reaction time was 40 min, the L-His-N-CQDs exhibited the highest fluorescence quantum yield of 22.43%. A series of characterizations revealed their superior fluorescence performance and uniform size distribution. Subsequently, L-His-N-CQDs were incorporated into a plant oil-based binder to formulate fluorescent anti-counterfeiting ink. Adjusting the mixing ratio of tung oil and soybean oil effectively regulated the ink's drying properties. When the tung oil-soybean oil ratio was 2:1 or 3:1, the ink achieved optimal drying properties, transparency, and fluidity, ensuring excellent printability and anti-counterfeiting performance in screen printing. Fluorescence spectroscopy tests indicated that the composite fluorescent anti-counterfeiting ink possessed remarkable extended fluorescence stability and anti-quenching properties. The ink's resin binder, plant oil solvent, and additives did not hinder the luminescence of carbon quantum dots. Thus, the prepared ink is highly applicable in anti-counterfeiting printing technologies and related fields, offering new material options for such printing techniques.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 38","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145081229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ni-Fe-P nanorods via self-sacrificial template as high-performance anodes for sodium-ion batteries.","authors":"Hui Xie, Bo Pang, Fangping Zheng, Xiawei Shen, Chuanqiang Wu","doi":"10.1088/1361-6528/ae03c7","DOIUrl":"10.1088/1361-6528/ae03c7","url":null,"abstract":"<p><p>Ni-Fe Prussian blue analogue (PBA) nanorods were successfully synthesized using an innovative one-dimensional molybdate template method, followed by the preparation of Ni-Fe-P nanorods through a phosphating process. These nanorods are meticulously constructed from two metal phosphides, Ni₅P₄and FeP. As an anode material for sodium-ion batteries (SIBs), the self-sacrificial template synthesis of Ni-Fe-P nanorods demonstrates remarkable electrochemical performance, achieving a reversible specific capacity of up to 678.8 mAh g^-1at a current density of 0.1 A g^-1, and retaining 108.0 mAh g^-1even at a high rate of 10 A g^-1. The unique nanorod morphology, synergistic interactions among components, and optimized electron/ion transport pathways contribute to the significant enhancement of the electrochemical properties of Ni-Fe-P nanorods. This study confirms the viability of using molybdate as a template for the synthesis of bimetallic PBAs and subsequent rephosphating to create complex nanostructured phosphide materials, offering a novel approach for the development of high-performance anode phosphide nanomaterials for SIBs.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145006313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"P-type buried layer DTSCR with predicted improved overshoot performance and discharge ability for ESD protections of advanced nanotechnology.","authors":"Zhengwei Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Ruibo Chen, Longhua Lin, Wei Huang","doi":"10.1088/1361-6528/ae03c6","DOIUrl":"10.1088/1361-6528/ae03c6","url":null,"abstract":"<p><p>A novel P-type buried layer diode-triggered silicon-controlled rectifier (PBL-DTSCR) with predicted good performance in electrostatic discharge (ESD) protection is proposed in this work. With P-type ESD implantations and silicide blocking layers applied to this novel structure, the efficiency of the diode triggering path is greatly improved, thus enhancing the discharge efficiency of the main path. Moreover, the parasitic SCR path is minimized by replacing the PNPN structure in conventional DTSCR to PNPNPN structure in PBL-DTSCR. This helps PBL-DTSCR to achieve a great improvement in both overshoot voltage and discharge ability. Moreover, reduced leakage current and flexible design window is also obtained by PBL-DTSCR. By optimizing the layout of PBL-DTSCR, a low trigger voltage (2.11 V) and relatively high holding voltage (2.08 V) is obtained, more importantly, overshoot voltage was suppressed by 40.22% (from 10.94 V to 6.54 V) and discharge ability was increased by 1.75 times (from 1.06 A to1.86 A) compared to conventional DTSCR. The leakage current of PBL-DTSCR was reduced by 99.7% (from 69.47 nA to 0.1497 nA) with same diode numbers compared to conventional DTSCR.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145006348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced patterned fluorescence from polystyrene through focused electron beam irradiation under various gases.","authors":"Deepak Kumar, Joseph W Brill, J Todd Hastings","doi":"10.1088/1361-6528/ae00cc","DOIUrl":"10.1088/1361-6528/ae00cc","url":null,"abstract":"<p><p>We report on a novel method for tuning and enhancing fluorescence from irradiated polystyrene through focused electron-beam exposure in gaseous environments. We describe the effect of electron dose and ambient gas on the photoluminescence (PL) spectra and yield of irradiated polystyrene films on insulating and conductive substrates. Polystyrene films were exposed in an environmental scanning electron microscope using a 20 keV electron-beam, ambient gas pressures from<10^-5 mbar (high vacuum) to 3 mbar, and electron doses from 1.8 to 45 mC cm^-2. Irradiated polystyrene films were characterized using confocal microscopy, transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy. From emission spectra collected using confocal microscopy we found that the emission wavelength and photon yield of the irradiated film can be tuned by both dose and gas pressure. The emission wavelength blue-shifts with increasing pressure and red-shifts with increasing dose enabling an overall tuning range of 451-544 nm. Significant enhancement in the PL intensity, up to 18 times on sapphire substrates under helium when compared to high-vacuum, are observed. Overall, the highest PL yield is observed on soda lime glass substrates under argon. Also, the photon-yield on conductive substrates is significantly smaller than that yield from insulating substrates. TEM images revealed electron-beam irradiated polystyrene is amorphous in nature and elemental mapping EDS revealed no signs of film oxidation. FTIR spectroscopy revealed that under gaseous environments the decay of aromatic and aliphatic C-H stretches is reduced compared to the high vacuum exposure; in all cases, features associated with the phenyl rings are preserved. Localized electron-beam synthesis of fluorophores in polystyrene can be controlled by both dose and by ambient gas pressure. This technique could enable new approaches to photonics where fluorophores with tunable emission properties can be locally introduced by electron-beam patterning.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144961896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural investigation of germanium nanoribbons network on Al(110).","authors":"K El Mechyly, A Mehdaoui, M C Hanf, Ph Sonnet, R Stephan, I Deroche, D Dentel, C Pirri","doi":"10.1088/1361-6528/ae029d","DOIUrl":"10.1088/1361-6528/ae029d","url":null,"abstract":"<p><p>The formation of one dimensional semiconductors offers exciting potential for the development of nanoscale devices. Germanium (Ge) nanoribbons can be formed on metallic substrates with specific structural and electronic properties. In this study, we investigate the structure of Ge nanoribbons grown on an Al(110) substrate by molecular beam epitaxy. We used low energy electron diffraction, scanning tunneling microscopy and density functional theory calculations techniques. We show the successful formation of an ordered network of single-width Ge-based nanoribbons, with a (10 × a_[-110]) periodicity along the [-110] direction of the Al(110) crystal surface. Individual Ge nanoribbons structure is determined via an energetic theoretical study based on Ge chemical potential, and a comparison of calculated and experimental images to validate a stacked dimers model.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144992957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}