P-type buried layer DTSCR with predicted improved overshoot performance and discharge ability for ESD protections of advanced nanotechnology.

IF 2.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanotechnology Pub Date : 2025-09-17 DOI:10.1088/1361-6528/ae03c6

Zhengwei Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Ruibo Chen, Longhua Lin, Wei Huang

{"title":"P-type buried layer DTSCR with predicted improved overshoot performance and discharge ability for ESD protections of advanced nanotechnology.","authors":"Zhengwei Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Ruibo Chen, Longhua Lin, Wei Huang","doi":"10.1088/1361-6528/ae03c6","DOIUrl":null,"url":null,"abstract":"<p><p>A novel P-type buried layer diode-triggered silicon-controlled rectifier (PBL-DTSCR) with predicted good performance in electrostatic discharge (ESD) protection is proposed in this work. With P-type ESD implantations and silicide blocking layers applied to this novel structure, the efficiency of the diode triggering path is greatly improved, thus enhancing the discharge efficiency of the main path. Moreover, the parasitic SCR path is minimized by replacing the PNPN structure in conventional DTSCR to PNPNPN structure in PBL-DTSCR. This helps PBL-DTSCR to achieve a great improvement in both overshoot voltage and discharge ability. Moreover, reduced leakage current and flexible design window is also obtained by PBL-DTSCR. By optimizing the layout of PBL-DTSCR, a low trigger voltage (2.11 V) and relatively high holding voltage (2.08 V) is obtained, more importantly, overshoot voltage was suppressed by 40.22% (from 10.94 V to 6.54 V) and discharge ability was increased by 1.75 times (from 1.06 A to1.86 A) compared to conventional DTSCR. The leakage current of PBL-DTSCR was reduced by 99.7% (from 69.47 nA to 0.1497 nA) with same diode numbers compared to conventional DTSCR.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ae03c6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

A novel P-type buried layer diode-triggered silicon-controlled rectifier (PBL-DTSCR) with predicted good performance in electrostatic discharge (ESD) protection is proposed in this work. With P-type ESD implantations and silicide blocking layers applied to this novel structure, the efficiency of the diode triggering path is greatly improved, thus enhancing the discharge efficiency of the main path. Moreover, the parasitic SCR path is minimized by replacing the PNPN structure in conventional DTSCR to PNPNPN structure in PBL-DTSCR. This helps PBL-DTSCR to achieve a great improvement in both overshoot voltage and discharge ability. Moreover, reduced leakage current and flexible design window is also obtained by PBL-DTSCR. By optimizing the layout of PBL-DTSCR, a low trigger voltage (2.11 V) and relatively high holding voltage (2.08 V) is obtained, more importantly, overshoot voltage was suppressed by 40.22% (from 10.94 V to 6.54 V) and discharge ability was increased by 1.75 times (from 1.06 A to1.86 A) compared to conventional DTSCR. The leakage current of PBL-DTSCR was reduced by 99.7% (from 69.47 nA to 0.1497 nA) with same diode numbers compared to conventional DTSCR.

查看原文本刊更多论文

p型埋层DTSCR具有预测改善的超调性能和放电能力，用于先进纳米技术的ESD保护。

提出了一种具有良好静电放电保护性能的新型p型埋层二极管触发硅控整流器（PBL-DTSCR）。该结构采用p型ESD植入和硅化物阻挡层，大大提高了二极管触发路径的效率，从而提高了主路径的放电效率。此外，通过将传统DTSCR中的PNPN结构替换为PBL-DTSCR中的PNPNPN结构，最大限度地减少了寄生晶闸管通路。这有助于PBL-DTSCR在过调电压和放电能力方面都有很大的提高。此外，PBL-DTSCR还具有更小的泄漏电流和更灵活的设计窗口。通过优化PBL-DTSCR的布局，获得了较低的触发电压（2.11V）和较高的保持电压（2.08V），更重要的是，与传统DTSCR相比，超调电压（从10.94V降低到6.54V）降低了40.22%，放电能力（从1.06A提高到1.86 a）提高了1.75倍。在二极管数相同的情况下，PBL-DTSCR的漏电流比传统DTSCR降低了99.7%（从69.47nA降低到0.1497nA）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.