K El Mechyly, A Mehdaoui, M C Hanf, Ph Sonnet, R Stephan, I Deroche, D Dentel, C Pirri
{"title":"Structural investigation of germanium nanoribbons network on Al(110).","authors":"K El Mechyly, A Mehdaoui, M C Hanf, Ph Sonnet, R Stephan, I Deroche, D Dentel, C Pirri","doi":"10.1088/1361-6528/ae029d","DOIUrl":null,"url":null,"abstract":"<p><p>The formation of one dimensional semiconductors offers exciting potential for the development of nanoscale devices. Germanium (Ge) nanoribbons can be formed on metallic substrates with specific structural and electronic properties. In this study, we investigate the structure of Ge nanoribbons grown on an Al(110) substrate by molecular beam epitaxy. We used low energy electron diffraction, scanning tunneling microscopy and density functional theory calculations techniques. We show the successful formation of an ordered network of single-width Ge-based nanoribbons, with a (10 × a<sub>[-110]</sub>) periodicity along the [-110] direction of the Al(110) crystal surface. Individual Ge nanoribbons structure is determined via an energetic theoretical study based on Ge chemical potential, and a comparison of calculated and experimental images to validate a stacked dimers model.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/ae029d","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The formation of one dimensional semiconductors offers exciting potential for the development of nanoscale devices. Germanium (Ge) nanoribbons can be formed on metallic substrates with specific structural and electronic properties. In this study, we investigate the structure of Ge nanoribbons grown on an Al(110) substrate by molecular beam epitaxy. We used low energy electron diffraction, scanning tunneling microscopy and density functional theory calculations techniques. We show the successful formation of an ordered network of single-width Ge-based nanoribbons, with a (10 × a[-110]) periodicity along the [-110] direction of the Al(110) crystal surface. Individual Ge nanoribbons structure is determined via an energetic theoretical study based on Ge chemical potential, and a comparison of calculated and experimental images to validate a stacked dimers model.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
