Adelcio M de Souza, Daniel R Celino, Regiane Ragi, Murilo A Romero
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引用次数: 0
Abstract
This review addresses the compact modeling strategies for field-effect transistors (FETs) based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of 2D-FETs into high-density circuits demands accurate compact models, beyond those established for silicon MOSFETs. We discuss the characteristics of the main 2D material suitable for nanoelectronics and examine the main modeling approaches and challenges, with a focus on top-gated devices and transport regimes spanning from diffusive to ballistic. Special attention is given to non-idealities such as short-channel effects, interface traps, and non-ohmic heterodimensional (3D-2D) contacts. Finally, we offer perspectives on the future application of 2D semiconductors in nanoelectronics.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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