Fateme Yekefalah, Thomas Nuytten, Kaustuv Banerjee, Pawan Kumar, Benjamin Groven, Claudia Fleischmann, Ingrid De Wolf
{"title":"Nanoscale spectroscopic investigation of impact of strain on field-effect mobility of WS<sub>2</sub>.","authors":"Fateme Yekefalah, Thomas Nuytten, Kaustuv Banerjee, Pawan Kumar, Benjamin Groven, Claudia Fleischmann, Ingrid De Wolf","doi":"10.1088/1361-6528/addacc","DOIUrl":null,"url":null,"abstract":"<p><p>In this work, an in-depth study of the strain originating from the metallic pads of field effect transistors with WS<sub>2</sub>channels are reported. Presence of tensile strain caused by Ni/Pd pads fabricated with a lift-off process is confirmed with high resolution tip-enhanced Raman and photoluminescence. This strain field appears to extend in the 1-2<i>µ</i>m vicinity of the pads and affect the optical bandgap of the layer. The severity and the profile of the mechanical stress seems to depend on factors like device architecture, channel length, and the contact area of the pads. Results indicate that the optical response of the channel can be correlated to the field-effect mobility, both factors reflecting the quality of the crystal, and be utilized in robust assessment of mechanical stress in these devices.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/addacc","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract
In this work, an in-depth study of the strain originating from the metallic pads of field effect transistors with WS2channels are reported. Presence of tensile strain caused by Ni/Pd pads fabricated with a lift-off process is confirmed with high resolution tip-enhanced Raman and photoluminescence. This strain field appears to extend in the 1-2µm vicinity of the pads and affect the optical bandgap of the layer. The severity and the profile of the mechanical stress seems to depend on factors like device architecture, channel length, and the contact area of the pads. Results indicate that the optical response of the channel can be correlated to the field-effect mobility, both factors reflecting the quality of the crystal, and be utilized in robust assessment of mechanical stress in these devices.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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