Nature nanotechnology最新文献

{"title":"Atomic-scale visualization of three-dimensional magnetization vectors with competing spin Hamiltonian interactions","authors":"Qi Wang, Miao Zhang, Gustav Bihlmayer, Jizhou Li, Anhua Wu, Wenhao Di, Liangbi Su, Yulei Song, Shih-Wei Hung, Jan Rusz, Rafal E. Dunin-Borkowski, Xiaoyan Zhong","doi":"10.1038/s41565-026-02270-6","DOIUrl":"10.1038/s41565-026-02270-6","url":null,"abstract":"The spin Hamiltonian describes the energy of a magnetic system, which originates from interactions between electron spins that have a three-dimensional (3D) vectorial nature and atomic-scale arrangement. It is crucial to know the energy contributions associated with spin behaviour, such as superexchange coupling, Dzyaloshinskii–Moriya interaction, Zeeman energy in external fields and single-ion anisotropy (SIA), for a fundamental understanding of the ground state and dynamics of magnetic materials. An experimental method, capable of resolving local 3D spin vectors on the atomic scale, is needed to provide direct correlation between the competing energy terms and corresponding atomic configurations. Here we demonstrate a beam-shift-based four-dimensional electron magnetic circular dichroism technique, which achieves quantitative 3D vector magnetometry and infers the energy contributions to the spin Hamiltonian on an individual atomic plane basis. The spatial resolution of 2.25 Å enables evaluation of spin Hamiltonian energy terms within individual atomic planes. In a canted antiferromagnet, YFeO3, we confirm an asymmetric spin reorientation of the magnetic spin moments on the two antiferromagnetic spin sublattices. The inferred superexchange coupling, Dzyaloshinskii–Moriya interaction, SIA and Zeeman energies provide atomic-level insight into the interplay between these spin interactions during a field-induced spin reorientation transition. The observed asymmetry in spin reorientation angle arises primarily from the SIA and opposite Zeeman energies of the adjacent antiferromagnetically coupled atomic planes, resulting in both magnetic spin moments being nearly aligned with the external magnetic field. By bridging the gap in imaging resolution for 3D spin vectors and atomic positions, our method opens an avenue for the atomic-scale characterization and engineering of the energetics described by the spin Hamiltonian. A beam-shift-based 4D EMCD method is developed that can map 3D spin vectors across individual atomic planes and reveal how competing spin Hamiltonian interactions drive asymmetric spin rotation in canted antiferromagnetic YFeO3.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":"21 10","pages":"1390-1397"},"PeriodicalIF":37.5,"publicationDate":"2026-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149137221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The very hungry nanopillar","authors":"Nicole F. Steinmetz,Henri F. Pokorski,Sean A. McDowell,Mary Ann Bever","doi":"10.1038/s41565-026-02292-0","DOIUrl":"https://doi.org/10.1038/s41565-026-02292-0","url":null,"abstract":"","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":"8 1","pages":""},"PeriodicalIF":38.3,"publicationDate":"2026-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149088458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stereochemical origin of potential hysteresis in lithium metal batteries with lithium-rich cation-disordered rocksalt positive electrodes","authors":"Yu Mei, Fanjie Xia, Hongyi Chen, Yujin Li, Jinqiang Gao, Kefu Zhu, Lunhua He, Si Wu, Hai-Feng Li, Longlong Fan, Chun Zhan, Lianshan Ni, Haoji Wang, Weishun Jian, Kai Wang, Debbie S. Silvester, Craig E. Banks, Jinsong Wu, Wentao Deng, Guoqiang Zou, Hongshuai Hou, Xiaobo Ji","doi":"10.1038/s41565-026-02301-2","DOIUrl":"https://doi.org/10.1038/s41565-026-02301-2","url":null,"abstract":"Li-rich cation-disordered rocksalts (DRXs) are promising active materials for designing high-capacity positive electrodes for non-aqueous lithium-based batteries. However, the use of DRX-based positive electrodes results in pronounced cell potential hysteresis and low energy efficiency. The reasons for these detrimental behaviours remain unclear owing to the complex structural evolution of DRXs during battery operation. Here, via extensive physicochemical and electrochemical characterizations, we show that multiscale stereochemistry, particularly structure distortion at the atomic scale and short-range ordering in nanoscale domains, can thermodynamically and kinetically affect the potential hysteresis of Li||DRX cells. By using DRX models, we show that redox-inactive d0 transition metals (d0 TMs) influence the regulation of localized nanostructures. In particular, the out-of-centre distortion of d0 TMO6 octahedra, driven by the pseudo Jahn–Teller effect, decreases cation short-range order, thereby facilitating a high-rate Li+ percolation pathway. Moreover, the pseudo Jahn–Teller effect of d0 TMs is found to weaken the ligand-to-metal charge transfer process of Ni–O and thermodynamically enhance the reversibility of the lattice oxygen redox. As a result, the kinetic and thermodynamic factors contributing to the potential hysteresis of Li metal cells with Nb-containing DRX at the positive electrode are effectively mitigated.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":"16 1","pages":""},"PeriodicalIF":38.3,"publicationDate":"2026-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149087805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stopped-light-enhanced gravitational force sensing.","authors":"Yicheng Zhu, Qi Geng, Boyi Xue, Yuncong Sun, Ruixiang Zhang, Xianfeng Chen, Xiaoshun Jiang, Farhan Azeem, Miguel Tierz, Wenjie Wan","doi":"10.1038/s41565-026-02298-8","DOIUrl":"https://doi.org/10.1038/s41565-026-02298-8","url":null,"abstract":"<p><p>As the weakest fundamental force, gravity yields only small accelerations from millimetre-scale masses, making them difficult to detect. Detecting the gravitational fields of microscopic objects is important for microscale sensing, imaging or studies of the impact of the quantum state of an object on gravity. Cavendish-type torsion balances can sensitively measure gravity from small source masses, but their integration with micro- and nanophotonic readout remains challenging. Here we show gravitational-force sensing of a millimetre-sized mass using a torsion pendulum integrated with optical microcavity readout. A coupled photon-phonon resonance induces stopped light behaviour, reducing the group velocity to 2,000 m s^-1 and producing steep optical dispersion. The exponentially decaying evanescent field of the microcavity converts nanoscale displacements over an ~100 nm coupling length into optical signals, thereby increasing displacement sensitivity. The sensor reaches a displacement sensitivity of 7.85 pm/ <math> <msqrt> <mrow><mrow><mi>H</mi></mrow> </mrow> <mrow><mrow><mi>z</mi></mrow> </mrow> </msqrt> </math> , corresponding to an acceleration sensitivity of 3.06 × 10^-16 g. By periodically modulating the mass position, we resolve a minimum detectable gravitational-force change of 3.02 × 10^-16 N. This compact, sensitive scheme supports microscopic gravitational sensing and may allow for studies of gravity's quantum nature.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149081567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory.","authors":"Jiajie Qi, Tian Gu, Jingfang Tu, Qiu Yang, Quanlin Guo, Liangliang Guo, Pan Wu, Le Chen, Mingkang Zhang, Chong Zhao, Enze Tian, Qianqian Yang, Kanghao Xie, Fuwei Yang, Bai Song, Linxing Zhang, Xiaorui Zheng, Xiaobo Lu, Enge Wang, Li Wang, Chenguang Qiu, Zhibin Zhang, Kaihui Liu","doi":"10.1038/s41565-026-02280-4","DOIUrl":"10.1038/s41565-026-02280-4","url":null,"abstract":"<p><p>Two-dimensional rhombohedral boron nitride (rBN) has emerged as a promising sliding ferroelectric material for high-density, fast-speed and non-volatile memories. However, the batch production of ferroelectric rBN wafers has remained a critical challenge due to the thermodynamic instability of the rhombohedral phase and the inherent difficulties in maintaining consistent growth kinetics. Here we report a step-templated interfacial epitaxy strategy that enables the reproducible fabrication of 4-inch rBN wafers from nickel-boron films sputtered on the stepped sapphires. Comprehensive structural characterizations across multiple scales confirm the high phase purity and batch-to-batch consistent quality of produced rBN wafers. The intrinsic sliding ferroelectricity is verified in a unified ferroelectric field-effect transistor (FeFET), which exhibits ultrafast switching speed (at the nanosecond scale), high fatigue resistance (>2 × 10⁹ cycles) and long-term non-volatility (10 years). FeFET arrays are also constructed based on rBN wafers, featuring a high integration density with significant on/off ratios (10⁶). Remarkably, the rBN FeFETs can maintain large memory windows (4 V) and excellent thermal stability (>470 K), even at an ultrashort channel length of 30 nm. These results establish rBN as a scalable platform for next-generation sliding ferroelectric memories, facilitating their applications in high-density memory chips and artificial intelligence accelerators.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149081611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanical stress remodelling drives epithelial-mesenchymal transition in the tumour microenvironment.","authors":"Minji An, Ri Yu, Annie Lin, Jinho Jang, Jiyeon Ohk, Jaemog Jung, Young-Joo Kim, Hosung Jung, Minsuk Kwak, Young-Wook Jun, Jinwoo Cheon","doi":"10.1038/s41565-026-02282-2","DOIUrl":"https://doi.org/10.1038/s41565-026-02282-2","url":null,"abstract":"<p><p>The dynamic mechanical response of tissues underlies their physiological function; yet a direct, quantitative measurement of tissue stress in vivo has remained a major challenge. Here we introduce the mechanoMR microparticle sensor, a platform that transduces local tissue mechanical stress into quantitative magnetic resonance read-outs with single-particle resolution. The sensor comprises alginate hydrogel microparticles (~70 μm) homogeneously embedded with Zn_0.4Fe_2.6O₄ magnetic nanoparticles, where stress-induced hydrogel compression reduces local water content and restricts proton diffusion surrounding the magnetic nanoparticles, thereby modulating magnetic-nanoparticle-mediated transverse relaxation (R₂). Calibration of the stress-R₂ relationship enables a quantitative measurement of local tissue stress over a physiologically relevant range of 0-15 kPa. We demonstrate the platform in tumour spheroids and mouse xenografts, enabling the non-invasive, spatiotemporal mapping of tissue stress during tumour progression. Using this approach, we show that epithelial-mesenchymal transition is accompanied by distinct stress remodelling patterns in vivo. Strikingly, abrupt stress increases, rather than cumulative or peak stress magnitude, determine epithelial-mesenchymal transition induction. Transcriptomic profiling reveals that gradual stress loading activates cytoprotective FOXO/AMPK pathways that reinforce epithelial stability, whereas acute stress surges overwhelm these defence mechanisms, predisposing cells to mesenchymal reprogramming. These findings establish the mechanoMR microparticle sensor as a broadly applicable platform for linking tissue mechanics to cell-state transitions in development and disease.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149075551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensing forces that shape tumours.","authors":"Hyuntae Jeong, Jiwon Kim, Ian Y Wong","doi":"10.1038/s41565-026-02284-0","DOIUrl":"https://doi.org/10.1038/s41565-026-02284-0","url":null,"abstract":"","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149075534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional materials for advanced back-end-of-line and wafer backside technologies.","authors":"Zhengpeng Wang, Jiechen Wang, Yue Cao, Hang-Ming Zhang, Yan Zeng, Sishuo Liu, Songqi Wang, Hehe Gong, Yuhao Zhang, Pingfan Wu, Liang Peng, Han Wang","doi":"10.1038/s41565-026-02274-2","DOIUrl":"https://doi.org/10.1038/s41565-026-02274-2","url":null,"abstract":"<p><p>The continued evolution of computing hardware beyond conventional silicon complementary metal-oxide-semiconductor scaling demands new materials and innovative architectures to increase transistor density, reduce resistance-capacitance delay, mitigate thermal challenges and improve overall energy efficiency. Two-dimensional (2D) materials, including graphene, boron nitride and transition-metal dichalcogenides, offer a promising pathway to overcome interconnect scaling limits in advanced computing hardware. Their intrinsic properties enable reduced resistivity, lower resistance-capacitance delay and improved heat dissipation, making them particularly attractive for back-end-of-line (BEOL) applications. Moreover, the emerging backside power-delivery networks (BSPDNs) open up new application opportunities for 2D-material transistors at the wafer backside. In this Review, we focus on the integration of 2D materials in BEOL interconnects, including their roles as metallic wires, barrier/liner layers and dielectric fillers. We also discuss their potential for BEOL-integrated devices such as logic transistors, static random-access memory, embedded dynamic random-access memory, non-volatile memory and selectors, as well as their emerging use in BSPDNs. Through systematic benchmarking with conventional technologies, we highlight the promising opportunities offered by 2D materials in BEOL and backside integration for advanced node chip technologies and discuss the key challenges these new technologies face towards practical industrial applications.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148990507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers.","authors":"Chang Niu, Linjia Long, Luqi Zheng, Shuting Du, Jian-Yu Lin, Kisoo Nam, Zehao Lin, Chang Liu, Juanjuan Lu, Haiyan Wang, Haitong Li, Peide D Ye","doi":"10.1038/s41565-026-02276-0","DOIUrl":"10.1038/s41565-026-02276-0","url":null,"abstract":"<p><p>Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor technology by extending dense vertical stacking of multifunctional logic and memory devices. Here we demonstrate wafer-scale M3D integration of three tiers of atomic-layer-deposited indium oxide (InO_x)-based devices (>100,000 fabricated), including ferroelectric, enhancement-mode and depletion-mode field-effect transistors, on 200-mm silicon wafers. We achieve threshold voltage standard deviations as low as 0.04 V, average electron mobilities of up to 91.6 cm² V^-1 s^-1 and fully functional cross-tier circuits. A four-tier 3D computing-in-memory accelerator targeting large-language-model workloads is developed using a custom InO_x process design kit, delivering 1.4× to 2.9× speed-up and comparable energy-delay product improvements over 2D baselines. These results establish atomic-layer-deposited InO_x M3D integration as a scalable and complementary metal-oxide-semiconductor-compatible platform for next-generation artificial intelligence hardware and advanced electronics.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148977330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-resolution intrinsically stretchable quantum-dot displays through thermally assisted intaglio transfer printing.","authors":"Jisu Yoo, Kyunghoon Lee, Ji Su Kim, Yunho Kim, Chansul Park, Jinhee Lee, Jiwon Kim, Sun-Woo Lee, Eonhyoung Ahn, Sonwoo Jung, Jung Duk Seo, Soyeon Lee, Yaewon Kim, Gwang Heon Lee, Kiwook Kim, Soo Ik Park, Daewon Yoon, Jongseok Bae, Changsoon Choi, Hyungju Ahn, Taek-Soo Kim, Dong Chan Kim, Dae-Hyeong Kim, Jiwoong Yang, Moon Kee Choi","doi":"10.1038/s41565-026-02272-4","DOIUrl":"https://doi.org/10.1038/s41565-026-02272-4","url":null,"abstract":"<p><p>Intrinsically stretchable light-emitting devices are promising for wearable displays, soft robotics and skin-mounted optoelectronics but are limited by the trade-off between mechanical softness, charge injection and pixel definition. Stretchable quantum-dot emissive layers offer narrow, colour-tunable emission from quantum-confined nanocrystals, yet elastomeric matrices introduce insulating barriers and viscoelastic deformation that compromise efficiency and high-resolution patterning. Here we report ligand engineering at the interface and thermally assisted intaglio film transfer printing (LIFT), a strategy for high-definition intrinsically stretchable quantum-dot light-emitting diodes. Selective replacement of the polymer-rich surface of quantum-dot nanocomposites with polar short-chain ligands forms a nanoscale interfacial region that lowers the hole-injection barrier while preserving bulk mechanical compliance. Thermal assistance concentrates strain at pattern boundaries, allowing clean cleavage of soft emissive films into high-fidelity pixel arrays. The devices achieve external quantum efficiencies of up to 23.9% in conventional architectures and fully stretchable QLEDs with a luminance of 53,300 cd m⁻², an external quantum efficiency of 8.0% and stretchability beyond 65%. The method further produces arrays up to 16,000 pixels per inch and stretchable 12 × 12 multicolour passive-matrix displays.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148970285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}