Nature nanotechnology最新文献

NanostarDB: an interactive knowledgebase for standardized annotation, discovery and reuse of nucleic acid nanostructure designs. 用于核酸纳米结构设计的标准化注释、发现和重用的交互式知识库。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-23 DOI: 10.1038/s41565-026-02307-w

Adam Knirsch, Kenan Gnonhoue Dokonon, Pietro Cicuta, Lorenzo Di Michele

引用次数: 0

Supramolecular chemical ligation of helical polymers. 螺旋聚合物的超分子化学连接。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-20 DOI: 10.1038/s41565-026-02310-1

Minyi Ma, Zimai Jiang, Na Li, Yifei Xu, Da-Hui Qu, He Tian, Ben L Feringa, Qi Zhang

{"title":"Supramolecular chemical ligation of helical polymers.","authors":"Minyi Ma, Zimai Jiang, Na Li, Yifei Xu, Da-Hui Qu, He Tian, Ben L Feringa, Qi Zhang","doi":"10.1038/s41565-026-02310-1","DOIUrl":"https://doi.org/10.1038/s41565-026-02310-1","url":null,"abstract":"Chemical ligation of polymer segments is an essential approach to extend the length of synthetic polymers. Ligating individual polymer chains at the molecular level remains a formidable challenge owing to the entropically disfavoured collision probability between reactive end groups, and the need to overcome the activation barrier. Here we report a pathway to chemical ligation of synthetic polymers via folding-driven supramolecular polymerization followed by dynamic covalent polycondensation. Our strategy, which does not require thermal activation, uses hydrogen bonds that induce conformational folding to rigidify the polymer backbone while providing sticky ends for supramolecular pre-organization. This promotes base-catalysed covalent exchange between terminal groups (in our case, thiolate-disulfide groups). We obtain mechanistic insight in the ligation process by engineering side-chain units that determine conformational foldability and intermolecular H-bonding pre-organization. The resulting extended helical polymers fold into hierarchical globular architectures in solution and exhibit thermo-responsive macromolecular entanglements in bulk films. The combination of noncovalent assembly and dynamic covalent polymerization offers a supramolecular pathway for non-thermal and controllable polycondensation of dynamic polymers with secondary structures.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149228326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stacking-specific two-dimensional In₂Se₃ for ferroelectric homojunctions. 铁电同质结中特定堆叠的二维In2Se3。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-20 DOI: 10.1038/s41565-026-02309-8

Xiaodong Zheng, Tong Yang, Xiaoyu He, Wen Zhang, Chi Shing Tsang, Yuhuan Li, Lok Wing Wong, Zhangyuan Yan, Jiafeng Zhang, Tianren Chen, Honglin Chen, Runmeng Jia, Chun-Sing Lee, Shu Ping Lau, Shijian Zheng, Jiong Zhao, Ming Yang, Thuc Hue Ly

{"title":"Stacking-specific two-dimensional In2Se3 for ferroelectric homojunctions.","authors":"Xiaodong Zheng, Tong Yang, Xiaoyu He, Wen Zhang, Chi Shing Tsang, Yuhuan Li, Lok Wing Wong, Zhangyuan Yan, Jiafeng Zhang, Tianren Chen, Honglin Chen, Runmeng Jia, Chun-Sing Lee, Shu Ping Lau, Shijian Zheng, Jiong Zhao, Ming Yang, Thuc Hue Ly","doi":"10.1038/s41565-026-02309-8","DOIUrl":"https://doi.org/10.1038/s41565-026-02309-8","url":null,"abstract":"Two-dimensional (2D) ferroelectric semiconductors offer unique opportunities for ultrathin non-volatile memory and neuromorphic devices, yet the role of stacking order in intrinsic ferroelectric systems remains largely unexplored. Here we report the stacking-controlled growth of large-area 2D β'- and α-In2Se3 with distinct 2H and 3R configurations through chemical vapour deposition by regulating selenium kinetics and strain relaxation. By combining atomic-resolution microscopy, non-linear optical characterization and first-principles calculations, we uncover a strong correlation between stacking order and ferroelectric behaviour: β'-In2Se3 undergoes an antiferroelectric-to-paraelectric transition when switching from 2H to 3R stacking, whereas in α-In2Se3, in-plane ferroelectric polarization vanishes during the 3R-to-2H transition. We further achieve the controlled synthesis of 2H/3R ferroelectric homojunctions and directly visualize polarization-dependent interfacial potential barriers using differential phase-contrast scanning transmission electron microscopy. The engineered homojunctions exhibit switchable band alignment and tunable carrier transport, yielding memristors with significantly reduced switching voltages and an on/off ratio of ∼2.6 × 104, approximately one order of magnitude higher than devices based on single-stacking α-In2Se3. These findings establish stacking order as a powerful structural parameter for tailoring ferroelectricity in 2D materials and introduce stacking-engineered polymorphic heterogeneity as a versatile platform for high-performance ferroelectric electronics and memory technologies.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149228289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Millisecond phonon lifetimes in piezoelectric nanomechanical resonators. 压电纳米机械谐振器中的毫秒声子寿命。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-16 DOI: 10.1038/s41565-026-02289-9

Oliver A Hitchcock, Matthew P Maksymowych, Kaveh Pezeshki, Takuma Makihara, Erik Szakiel, Chou-Wei Kiang, Daniel Rugar, Amir H Safavi-Naeini

{"title":"Millisecond phonon lifetimes in piezoelectric nanomechanical resonators.","authors":"Oliver A Hitchcock, Matthew P Maksymowych, Kaveh Pezeshki, Takuma Makihara, Erik Szakiel, Chou-Wei Kiang, Daniel Rugar, Amir H Safavi-Naeini","doi":"10.1038/s41565-026-02289-9","DOIUrl":"https://doi.org/10.1038/s41565-026-02289-9","url":null,"abstract":"Piezoelectric nanomechanical resonators operating at gigahertz frequencies are a promising platform for quantum information processing and precision sensing, but phonon lifetimes have been limited to the microsecond range, widely attributed to the higher intrinsic loss of piezoelectric materials. Here we show that this limitation is not fundamental. Using a fabrication process informed by recent studies of defect-mediated loss in lithium niobate, we combine the chemical restoration of ion-milled surfaces with a shadow-mask metallization process to produce lithium niobate phononic crystal resonators with inferred internal phonon lifetimes of up to 21 ms at 3.6 GHz, corresponding to quality factors exceeding 4 × 108 (f × Qi > 1018) at millikelvin temperatures. By systematically varying the electrode-to-resonator spacing, we demonstrate that the measured lifetime is set by external coupling between the device and measurement circuit rather than material loss. This establishes that lithium niobate, once fabrication-induced surface damage is removed, achieves an intrinsic quality comparable with the best mechanical materials while remaining an intrinsically piezoelectric platform with strong electromechanical coupling.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149207140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Your battery may not be a battery. 你的电池可能不是电池。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-15 DOI: 10.1038/s41565-026-02296-w

Claire Villevieille, Petr Novák, Hubert H Girault

引用次数: 0

Interlayer sliding controls magnetism in tetralayer graphene. 层间滑动控制四层石墨烯的磁性。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-15 DOI: 10.1038/s41565-026-02313-y

引用次数: 0

Evidence for an excitonic insulator. 激子绝缘体存在的证据。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-14 DOI: 10.1038/s41565-026-02297-9

Deung-Jang Choi

引用次数: 0

Sliding ferroelectricity scales up. 滑动铁电性扩大。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-14 DOI: 10.1038/s41565-026-02293-z

Yong Xie, Andres Castellanos-Gomez

引用次数: 0

Cryogenic shock exfoliation for ultrahigh mobility rhombohedral graphite nanoelectronics. 超高迁移率菱形石墨纳米电子学的低温激波剥落。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-14 DOI: 10.1038/s41565-026-02283-1

Ludwig Holleis, Youngjoon Choi, Canxun Zhang, Jack H Farrell, Gabriel Bargas, Audrey Hsu, Zexing Chen, Ian Sackin, Wenjie Zhou, Yi Guo, Thibault Charpentier, Yifan Jiang, Benjamin A Foutty, Aidan Keough, Martin E Huber, Takashi Taniguchi, Kenji Watanabe, Andrew Lucas, Andrea F Young

{"title":"Cryogenic shock exfoliation for ultrahigh mobility rhombohedral graphite nanoelectronics.","authors":"Ludwig Holleis, Youngjoon Choi, Canxun Zhang, Jack H Farrell, Gabriel Bargas, Audrey Hsu, Zexing Chen, Ian Sackin, Wenjie Zhou, Yi Guo, Thibault Charpentier, Yifan Jiang, Benjamin A Foutty, Aidan Keough, Martin E Huber, Takashi Taniguchi, Kenji Watanabe, Andrew Lucas, Andrea F Young","doi":"10.1038/s41565-026-02283-1","DOIUrl":"https://doi.org/10.1038/s41565-026-02283-1","url":null,"abstract":"Rhombohedral multilayer graphene offers a tunable platform for correlated electron physics, featuring field-effect control of magnetic, superconducting and topological phases. The promise of these materials has been held back by the limited abundance of rhombohedral stacking in natural graphite, which constrains both sample yield and useful area. Here we introduce cryogenic shock exfoliation to produce large-area rhombohedral graphene flakes. This exfoliation, combined with a low-pressure van der Waals assembly technique that preserves stacking order, enables highly uniform devices exceeding 1,300 μm2 in area with fabrication yields of ∼90%. Using scanning nanoSQUID-on-tip imaging, we demonstrate uniform spin magnetism over the full central 10 × 10 μm2 area of our devices. Transverse magnetic focusing reveals a disorder mean free path exceeding 200 μm at low temperatures. Within the flat surface bands of rhombohedral multilayer graphene, we observe a size-driven crossover from Poiseuille to porous electron flow in the intermediate-temperature regime of strong electron-electron hydrodynamics, providing a further signature of ultrahigh device quality. Our approach overcomes a key materials bottleneck in the fabrication of mesoscopic rhombohedral graphene devices, paving the way for incorporating strongly correlated phases into two-dimensional nanoelectronics.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149182995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gate-induced layer sliding drives non-volatile switching of magnetism in tetralayer graphene. 栅极诱导层滑动驱动四层石墨烯的非易失性磁开关。

IF 37.5 1区材料科学

Nature nanotechnology Pub Date : 2026-10-14 DOI: 10.1038/s41565-026-02306-x

Daniel Brandon, Tixuan Tan, Yiwen Ai, Kyle Nadel, Peter Golemis, Akshat Gandhi, Lujin Min, Wenjun Zheng, Kenji Watanabe, Takashi Taniguchi, Mengkun Liu, Trithep Devakul, Kenji Yasuda

{"title":"Gate-induced layer sliding drives non-volatile switching of magnetism in tetralayer graphene.","authors":"Daniel Brandon, Tixuan Tan, Yiwen Ai, Kyle Nadel, Peter Golemis, Akshat Gandhi, Lujin Min, Wenjun Zheng, Kenji Watanabe, Takashi Taniguchi, Mengkun Liu, Trithep Devakul, Kenji Yasuda","doi":"10.1038/s41565-026-02306-x","DOIUrl":"https://doi.org/10.1038/s41565-026-02306-x","url":null,"abstract":"Layer stacking in two-dimensional materials can strongly impact electronic phases. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases, which are absent in conventional Bernal stacking. Here we use the sliding-induced first-order structural phase transition between Bernal and rhombohedral tetralayer graphene driven by gate voltages to manipulate the magnetic phase of the sample. Through transport measurement on marginally twisted double-bilayer graphene samples, we observe bistable switching between a Bernal-dominant state and a rhombohedral-Bernal mixed state across a wide space of the gate-voltage phase diagram. The structural phase transition induces a non-volatile switching between a non-magnetic and a ferromagnetic phase. We characterize the latter phase via low-temperature electric transport measurements and observe an anomalous Hall effect. The sign reversal of the anomalous Hall signal under opposite displacement fields suggests that the Hall signal may originate from domain boundaries between Bernal and rhombohedral regions. Our experiments showcase how gating-induced sliding phase transitions of two-dimensional materials can provide on-demand toggle switching between complex phases and offer insights on the effect of stacking domain boundaries on the global response of the system.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":" ","pages":""},"PeriodicalIF":37.5,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149183069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0