Microelectronic Engineering最新文献_第6页

Negative capacitance FET based dual-split control 6T-SRAM cell design for energy efficient and robust computing-in memory architectures 基于负电容场效应晶体管的双分路控制 6 T-SRAM 单元设计，适用于高能效和稳健的计算型内存架构

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-23 DOI: 10.1016/j.mee.2024.112165

Birudu Venu, Tirumalarao Kadiyam, Koteswararao Penumalli, Sivasankar Yellampalli, Ramesh Vaddi

{"title":"Negative capacitance FET based dual-split control 6T-SRAM cell design for energy efficient and robust computing-in memory architectures","authors":"Birudu Venu, Tirumalarao Kadiyam, Koteswararao Penumalli, Sivasankar Yellampalli, Ramesh Vaddi","doi":"10.1016/j.mee.2024.112165","DOIUrl":"10.1016/j.mee.2024.112165","url":null,"abstract":"<div>A Negative Capacitance Field effet transistor (NCFET) based Dual split control (DSC) 6T-SRAM cell has been designed and explored with Computing-in memory (CiM) architecture for energy efficient demonstration of Deep neural networks (DNN) basic operation such as Input-Weight (Dot) Product. The impact of ferro electric layer thickness (Tfe) on the SRAM cell perfomance metrics such as read noise margin (RNM), write noise margin (WNM) and energy efficiency for read and write operations have been analyzed at supply voltages of 0.3 V and 0.5 V. It has been observed that due to the steep slope characteristics, the NCFET based DSC 6T-SRAM cell design exhibits better RM, WM, and energy efficiency as compared to the baseline CMOS DSC SRAM cell design at VDD = 0.3 V and 0.5 V respectively (with Tfe range of 1 nm to 3 nm). Further, NCFET dual split control scheme for 6T-SRAM cell demonstrate improved read stability and write ability when compared with NCFET 6 T-SRAM cell design along with improved energy efficiency. NCFET based DSC 6T-SRAM CiM cell design has ∼22.77× and 12.41× lower energy consumption compared to the équivalent baseline 40 nm CMOS/baseline SRAM CiM design and ∼ 25.80× and 22.76× lower energy consumption compared to the NCFET based SRAM CiM at VDD = 0.3 V and 0.5 V respectively. NCFETs have improved steep subthreshold slope characteristics at an optimal Tfe value and NCFET SRAM based CiM circuits are expected to have higher noise margins and lower energy consumption compared to the baseline CMOS designs and are effective for NCFET based computing in-memory architectures with reduced read disturb issues in combination with DSC concept.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of thermal stress effects during annealing of hafnia-made thin film using molecular dynamics simulations 利用分子动力学模拟研究霞石薄膜退火过程中的热应力效应

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-21 DOI: 10.1016/j.mee.2024.112158

Kiran Raj, Yongwoo Kwon

{"title":"Investigation of thermal stress effects during annealing of hafnia-made thin film using molecular dynamics simulations","authors":"Kiran Raj, Yongwoo Kwon","doi":"10.1016/j.mee.2024.112158","DOIUrl":"10.1016/j.mee.2024.112158","url":null,"abstract":"<div>Hafnia or hafnium oxide is a high-<math><mi>κ</mi></math> dielectric material with paramount importance in the realm of semiconductor devices. Recent advancements in 3D device structures require a few nanometer-thick conformal films on non-planar substrates. During the fabrication stage, the annealing process of thin films has been discovered to mitigate delamination issues at the film-substrate interface. However, it has been observed that the residual stress, which emerges as the film cools to room temperature, may lead to delamination. In this study, we propose an idealized atomistic model to mimic the critical region of a 3D-NAND structure, to get insights into the effect of thermal stress and delamination during the annealing of hafnia-made thin film. We employ molecular dynamics simulation using charge-optimized many-body potential (COMB) to perform heating and cooling simulations for different thicknesses of the hafnia layer. Our results suggest that, during heating, as the annealing temperature increases, the severity of delamination decreases. At extremely low thickness of the hafnia layer, delamination does not occur. However, significant delamination is observed during the cooling process, especially when the high temperature gradient is high.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139919945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A current mode capacitance multiplier employing a single active element based on Arbel-Goldminz cells for low frequency applications 基于 Arbel-Goldminz 单元的电流模式电容乘法器，采用单一有源元件，适用于低频应用

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-16 DOI: 10.1016/j.mee.2024.112157

Burak Sakacı, Deniz Özenli

{"title":"A current mode capacitance multiplier employing a single active element based on Arbel-Goldminz cells for low frequency applications","authors":"Burak Sakacı, Deniz Özenli","doi":"10.1016/j.mee.2024.112157","DOIUrl":"10.1016/j.mee.2024.112157","url":null,"abstract":"<div>In this work, a capacitor multiplier based on a Multiple Output-Voltage Difference Transconductance Amplifier (MO-VDTA) is built by using Arbel-Goldminz cells with extensive performance analysis. Considering the large chip area occupation of capacitors, capacitor multipliers are one of the most required analog building blocks in most of low frequency applications. In this respect, the obtained capacitor multiplier is tested in a 2nd order low-pass filter by changing the cut-off frequency from 2 kHz to around 12.4 kHz. The multiplication factor (denoted as “k”) of the proposed architecture can be adjusted electronically from 120 to 750 for approximately two decades, while the structure contains only a single active element with a base capacitance. Additionally, the multiplication factor can be safely increased by using additional transconductance stages in the MO-VDTA active block. In the performance analysis, post-layout results are provided in conjunction with process corners, Monte-Carlo analyses and experimental verifications on the basis of commercial off-the-shelf elements such as AD844 and LM13700s.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139920071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of multi-scroll chaotic attractor based on a novel multi-segmented memristor and its application in medical image encryption 基于新型多分段忆阻器的多卷混沌吸引子设计及其在医学图像加密中的应用

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-09 DOI: 10.1016/j.mee.2024.112156

Jiangang Zuo , Meng Wang , Jie Zhang

{"title":"Design of multi-scroll chaotic attractor based on a novel multi-segmented memristor and its application in medical image encryption","authors":"Jiangang Zuo , Meng Wang , Jie Zhang","doi":"10.1016/j.mee.2024.112156","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112156","url":null,"abstract":"<div>Medical images contain rich individual health information, making the protection of their privacy and security crucial. This study first proposes a novel multi-segment memristor based on a multi-segment linear function. Then, building upon the Sprott-B chaotic system, a mirror-symmetric memristor multi-scroll chaotic attractor (MMSCAs) is introduced by incorporating logic pulse signals and the novel multi-segment memristor. Dynamic analysis of MMSCAs is conducted from four aspects: equilibrium points, Lyapunov exponents and bifurcations, coexisting attractors, and complexity. Lyapunov exponents and bifurcation diagram analysis reveal rich dynamical behaviors in MMSCAs, including inverse period-doubling bifurcations, burst chaotic, transient chaotic, and offset boosting. MMSCAs exhibit periodic and chaotic attractors co-existing under different initial conditions, along with multi-stability and super multi-stability. Complexity analysis results indicate that MMSCAs possess higher complexity and better randomness compared to other memristor chaotic systems. The accuracy of the MMSCAs mathematical model is verified through circuit design and simulation, and the implementation of MMSCAs in the embedded domain is extended using the STM32 microcontroller. Finally, a new cryptographic system is designed by integrating MMSCAs with RNA computation and applied to medical image encryption. The security of the cryptographic system is evaluated through key space and sensitivity, histogram, and correlation, while its robustness is evaluated through resistance to cropping and noise. The analysis results demonstrate high security and strong robustness of the cryptographic system, offering a novel solution for the protection of medical image information.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139738341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new characterization model of FinFET self-heating effect based on FinFET characteristic parameter 基于 FinFET 特征参数的 FinFET 自热效应新表征模型

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-08 DOI: 10.1016/j.mee.2024.112155

Yue Wang, Huaguo Liang, Hong Zhang, Danqing Li, Yingchun Lu, Maoxiang Yi, Zhengfeng Huang

{"title":"A new characterization model of FinFET self-heating effect based on FinFET characteristic parameter","authors":"Yue Wang, Huaguo Liang, Hong Zhang, Danqing Li, Yingchun Lu, Maoxiang Yi, Zhengfeng Huang","doi":"10.1016/j.mee.2024.112155","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112155","url":null,"abstract":"<div>The characterization of the self-heating effect (SHE) has been an important research topic in advanced technology, but the existing characterizations are few and the characterization process is relatively complex. In this research, a SHE characterization model is established based on the relationship between output transconductance variation (<math><mo>∆</mo><msub><mi>g</mi><mi>m</mi></msub></math>), gate source voltage (VGS) and temperature variation (<math><mo>∆</mo><mi>T</mi></math>) caused by SHE through machine learning, and then the model is validated by theoretical analyses and experimental simulation. The characterization model is capable of directly calculating the <math><mo>∆</mo><mi>T</mi></math> caused by SHE during I - V testing and simplifying the SHE characterization steps while ensuring characterization accuracy (<math><mo>∆</mo><mi>T</mi></math> difference < 1 °C), thus saving costs. It is also found that the model can expand the characterization range (VGS: 0.3–0.7 V) of SHE and conducts quantitative characterization with model calculation under different VGS, realizing a high characterization resolution of VGS: 0.01 V. The circuit level application proves that the method can be effectively applied to the characterization of the SHE and solves the problem of the characterization of the circuit level SHE.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139718567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon microresonator arrays: A comprehensive study on fabrication techniques and pH-controlled stress-induced variations in cantilever stiffness 硅微谐振器阵列：关于制造技术和 pH 值控制应力引起的悬臂刚度变化的综合研究

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-05 DOI: 10.1016/j.mee.2024.112154

G. Brunetti , A. De Pastina , C. Rotella , V. Usov , G. Villanueva , M. Hegner

{"title":"Silicon microresonator arrays: A comprehensive study on fabrication techniques and pH-controlled stress-induced variations in cantilever stiffness","authors":"G. Brunetti , A. De Pastina , C. Rotella , V. Usov , G. Villanueva , M. Hegner","doi":"10.1016/j.mee.2024.112154","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112154","url":null,"abstract":"<div>We introduce a detailed design and fabrication process of Silicon microcantilever arrays for biomolecular detection in liquid environment, utilized with laser readout. We present typical fabrication problems and provide related solutions to obtain high quality resonators via a robust, reproducible and high-yield process. Sensors in these arrays are individually functionalized with self-assembled chemical monolayers exposing various pH-active end-groups into solution. Dynamic-mode controlled frequency measurements in varying pH solutions result in stress-induced change of the sensor spring constant. pH changes in the solution lead to deprotonation of exposed functional chemical groups at high pH and the repulsive charges induced strain is proportional to the quantity and confinement of charges at the sensor interface. These built-up strains that affect the mechanical stiffness can be reversibly relaxed when exposed again to low pH environments.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0167931724000236/pdfft?md5=1183b305adb57154e812eb922407d6ba&pid=1-s2.0-S0167931724000236-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139709698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A ScAlN-based piezoelectric breathing mode dual-ring resonator with high temperature stability 具有高温稳定性的 ScAlN 基压电呼吸模式双环谐振器

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-02-01 DOI: 10.1016/j.mee.2024.112144

Zhaoyang Lu , Longlong Li , Wen Chen , Yuhao Xiao , Weilong You , Guoqiang Wu

{"title":"A ScAlN-based piezoelectric breathing mode dual-ring resonator with high temperature stability","authors":"Zhaoyang Lu , Longlong Li , Wen Chen , Yuhao Xiao , Weilong You , Guoqiang Wu","doi":"10.1016/j.mee.2024.112144","DOIUrl":"10.1016/j.mee.2024.112144","url":null,"abstract":"<div>In this work, a scandium-doped aluminum nitride (ScAlN)-based piezoelectric breathing mode dual-ring resonator with high temperature stability is presented. The designed resonator consists of two identical rings and a coupling straight beam in between. A combination of highly doped silicon and composite structure using silicon oxide is implemented to improve the frequency-temperature stability of the resonator. The dual-ring resonator is fabricated based on a ScAlN-based thin-film piezoelectric-on‑silicon (TPoS) platform. The measurement results show that the fabricated dual-ring resonator has a loaded quality factor (<math><msub><mi>Q</mi><mi>l</mi></msub></math>) of 6889 and an insertion loss of 13.898 dB at its resonant frequency of 16.766 MHz, corresponding to a motional resistance of 395 <math><mi>Ω</mi></math>, and an unloaded quality factor (<math><msub><mi>Q</mi><mi>un</mi></msub></math>) of 8681. The resonator's <math><msub><mi>Q</mi><mi>un</mi></msub></math> is almost constant within the pressure range of less than 300 Pa, indicating a good process tolerance in the vacuum packaging process. With the aid of the passive temperature compensation, the reported resonator exhibits an overall frequency variation of less than ±70 ppm over the entire temperature range of 20 °C to 105 °C, which agrees well with the predicted value obtained by finite element method (FEM) analysis. Moreover, Allan deviations of the resonator-based oscillator frequency are collected.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139663612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser induced reverse transfer of bulk Cu with a fs-pulsed UV laser for microelectronics applications 用于微电子学应用的 fs 脉冲紫外激光诱导块状铜的反向转移

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-01-28 DOI: 10.1016/j.mee.2024.112143

Tommaso Raveglia, Dario Crimella, Ali Gökhan Demir

{"title":"Laser induced reverse transfer of bulk Cu with a fs-pulsed UV laser for microelectronics applications","authors":"Tommaso Raveglia, Dario Crimella, Ali Gökhan Demir","doi":"10.1016/j.mee.2024.112143","DOIUrl":"10.1016/j.mee.2024.112143","url":null,"abstract":"<div>Laser Induced Reverse Transfer (LIRT) is a versatile technique as a single-step deposition method allowing the localized transfer of a variety of different metals and polymers on transparent, ultra-thin and stretchable substrates. Also referred to as laser induced backward transfer (LIBT), the process can be manipulated to transfer material from bulk materials to transparent targets, providing a direct method potentially sustainable to generate microelectronic circuitry. In this work, a fs-pulsed UV laser (343 nm) was employed for the first time to transfer electrically conductive copper tracks and layers from bulk Cu in the form of sheet metal onto ultra-clear soda lime glass slides with sub-micrometric thickness. The process development started from the selection of the materials for adequate energy transfer between the beam source and the donor/receiver combination. In the single-track study, the effect of donor/receiver gap was analyzed while tracks ranges with 5 to 233 nm thickness and 7 to 41 μm average width were produced. Based on the results, multi-track layer deposition was assessed by varying the overlap between the tracks. Functional demonstrator cases were produced. The work confirms the suitability of LIRT as a direct approach to create microelectric circuitry by using readily available and sustainable bulk Cu material.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0167931724000121/pdfft?md5=69130f80789fb89b4663a57a0e391311&pid=1-s2.0-S0167931724000121-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139582088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Al3Sc thin films for advanced interconnect applications 用于先进互连应用的 Al3Sc 薄膜

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-01-23 DOI: 10.1016/j.mee.2024.112141

Jean-Philippe Soulié , Kiroubanand Sankaran , Valeria Founta , Karl Opsomer , Christophe Detavernier , Joris Van de Vondel , Geoffrey Pourtois , Zsolt Tőkei , Johan Swerts , Christoph Adelmann

{"title":"Al3Sc thin films for advanced interconnect applications","authors":"Jean-Philippe Soulié , Kiroubanand Sankaran , Valeria Founta , Karl Opsomer , Christophe Detavernier , Joris Van de Vondel , Geoffrey Pourtois , Zsolt Tőkei , Johan Swerts , Christoph Adelmann","doi":"10.1016/j.mee.2024.112141","DOIUrl":"10.1016/j.mee.2024.112141","url":null,"abstract":"<div>AlxSc1-x thin films have been studied with compositions around Al3Sc (x = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190 °C, followed by recrystallization at 440 °C. After annealing at 500 °C, 24 nm thick stoichiometric Al3Sc showed a resistivity of 12.6 μΩcm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al3Sc, these results indicate that Al3Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139560594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High bias stability of Hf-doping-modulated indium oxide thin-film transistors 掺杂铪调制氧化铟薄膜晶体管的高偏压稳定性

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-01-22 DOI: 10.1016/j.mee.2024.112142

Wenwu Li , Caifang Gao , Xifeng Li , Jiayan Yang , Jianhua Zhang , Junhao Chu

{"title":"High bias stability of Hf-doping-modulated indium oxide thin-film transistors","authors":"Wenwu Li , Caifang Gao , Xifeng Li , Jiayan Yang , Jianhua Zhang , Junhao Chu","doi":"10.1016/j.mee.2024.112142","DOIUrl":"10.1016/j.mee.2024.112142","url":null,"abstract":"<div>Device stability is one of the key parameters for transistor applications. To improve the stability of Indium oxide (In2O3) after a long-time gate bias, a synthetic solution of hafnium chloride (HfCl4) and indium nitrate (In(NO3)3∙xH2O) reagents were used to obtain 0% to 5-at.% Hf doped In2O3 thin-film transistors. With the increase of Hf doping concentration, oxygen vacancies and residual hydroxyl groups continue to decrease, suppressing the carrier concentration and influencing the trap state density of In2O3. The sub-threshold slope (SS) 0.78 V·dec−1 for the undoped In2O3 transistor in this work is a typical value. When the dopant dose is up to 5-at.%, SS decreases to 0.32 V·dec−1. According to the proportional relationship between SS and the density of trap states, it shows that the density of trap states in the dielectric layer and the semiconductor/dielectric interface SS is greatly reduced after 5-at.% Hf doping. The probability of the charge being trapped is dropped as well. At the same time, under the doping of Hf, the transistor exhibits a very small threshold voltage shift. Especially at the dopant dose of 5-at.%, the transfer characteristic curve hardly shifts. This work demonstrates an In2O3 transistor with high bias stability by doping method.</div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139560492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0