Microelectronic Engineering最新文献_第5页

A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films 用于提高镍硅薄膜热稳定性的 C、N 和 Xe 预变质植入工艺比较研究

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-05-24 DOI: 10.1016/j.mee.2024.112210

S. Guillemin, L. Lachal, P. Gergaud, A. Grenier, F. Nemouchi, F. Mazen, Ph. Rodriguez

{"title":"A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films","authors":"S. Guillemin, L. Lachal, P. Gergaud, A. Grenier, F. Nemouchi, F. Mazen, Ph. Rodriguez","doi":"10.1016/j.mee.2024.112210","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112210","url":null,"abstract":"<div><p>In this paper, a comparative study of C-, N- and Xe-based pre-amorphization implantation (PAI) processes is proposed. The impact of the use of such processes on the agglomeration resistance and physical properties of the final Ni(<em>Pt</em>)Si layer, as well as the formation mechanisms via solid-state reactions and electrical performances via the transfer length measurement (TLM) method, is evaluated. It is shown that although all species are able to increase the agglomeration temperature of Ni(<em>Pt</em>)Si layers (up to more than 100 °C), the underlying mechanisms are different. For C- and N-based PAI processes a strong chemical effect is observed, while for Xe-based processes the amorphization depth plays an important role. Consequently, the beneficial effect of stabilizing Ni(<em>Pt</em>)Si layers at high temperatures using C- and N-based PAI processes has to be balanced with an increased layer resistivity (up to 30%) combined with a strong deterioration of the associated specific contact resistivity (which is multiplied by almost a factor 10). In this sense, Xe-based PAI processes seem to be a better option as they could allow to combine both requirements.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141090690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Neural networks based on in-sensor computing of optoelectronic memristor 基于光电忆阻器传感内计算的神经网络

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-05-08 DOI: 10.1016/j.mee.2024.112201

Zhang Zhang , Qifan Wang , Gang Shi , Yongbo Ma , Jianmin Zeng , Gang Liu

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Critical solder joint in insulated gate bipolar transistors (IGBT) power module for improved mechanical reliability 提高机械可靠性的绝缘栅双极晶体管 (IGBT) 功率模块中的关键焊点

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-05-04 DOI: 10.1016/j.mee.2024.112200

Sunday E. Nebo, Emeka H. Amalu, David J. Hughes

{"title":"Critical solder joint in insulated gate bipolar transistors (IGBT) power module for improved mechanical reliability","authors":"Sunday E. Nebo, Emeka H. Amalu, David J. Hughes","doi":"10.1016/j.mee.2024.112200","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112200","url":null,"abstract":"<div><p>This investigation identifies the critical solder joint in a typical Insulated Gate Bipolar Transistor (IGBT) module and provided new knowledge on how operating thermal loads degrade IGBT-attach, Diode-attach, and Substrate solder joints in the device. SolidWorks software is used to create three realistic 3-D Finite Element (FE) models of the typical IGBT module used in this investigation. In-service operating power and IEC 60068–2-14 thermal cycles are implemented in ANSYS mechanical package to simulate the response of the three solder joints in the FE models to the load cycles. The solder in the joints is lead-free alloy of 96.5% tin, 3% silver, and 0.5% copper (SAC305) composition. The SAC305 material properties are modelled as time and temperature dependent with Anand's visco-plastic model employed as the constitutive model. Results show that the key degradation mechanism of solder joints in IGBT module are stress, plastic strain, and strain energy magnitudes. Accumulated plastic strain in the joints is found the predominant damage factor. Critical solder joint in the module depends on the load cycle the device experiences. IGBT-attach solder joint is critical in active power load cycle. Substrate solder joint degraded most in passive thermal cum combined passive thermal and active power load cycles.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0167931724000698/pdfft?md5=dc9205ddc7660e90611897395e27cc61&pid=1-s2.0-S0167931724000698-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140893506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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GaN low noise amplifier MMIC with LPF and HPF noise matching 具有 LPF 和 HPF 噪声匹配功能的 GaN 低噪声放大器 MMIC

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-05-04 DOI: 10.1016/j.mee.2024.112199

Mohammad Zaid , Purnima Kumari , Mohammad Sajid Nazir , Ahtisham Pampori , Umakant Goyal , Meena Mishra , Yogesh Singh Chauhan

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Laser lift-off technique for applications in III-N microelectronics: A review 应用于 III-N 微电子学的激光升离技术：综述

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-28 DOI: 10.1016/j.mee.2024.112198

Sabuj Chowdhury , Sabrina Alam , Md Didarul Alam , Fahmida Sharmin Jui

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A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection 基于自修复 MXene/PVA 水凝胶的可穿戴应变传感器，用于身体运动检测

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-23 DOI: 10.1016/j.mee.2024.112197

Yiqiang Zheng , Yilin Li , Lili Wang , Hao Xu , Wei Han

{"title":"A wearable strain sensor based on self-healable MXene/PVA hydrogel for bodily motion detection","authors":"Yiqiang Zheng , Yilin Li , Lili Wang , Hao Xu , Wei Han","doi":"10.1016/j.mee.2024.112197","DOIUrl":"10.1016/j.mee.2024.112197","url":null,"abstract":"<div><p>Developing flexible, stretchable, and self-healing wearable electronic devices with skin-like capabilities is highly desirable for healthcare and human-machine interaction. Hydrogels as a promising sensing material with crosslinked polymer networks have received widespread attention for decades. However, sensors based on hydrogels suffer from low sensitivity and stability due to their poor electrical conductivity or the movement of nanofillers in hydrogel networks. Herein, a stable, sensitive, and self-healing strain sensor is fabricated by the Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene nanosheets/polyvinyl alcohol (PVA) hydrogel (T-hydrogel). The introduction of MXene increases the number of H-bonds in the PVA hydrogel network and enhances the conductivity, resulting in high sensitivity, stability, and self-healing character. The self-healing T-hydrogel-based strain sensor has a performance close to that of the original sensor. In addition, the device is capable of detecting bodily motions, indicating the potential application in the field of human health monitoring and human-computer interaction.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140762753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Controlled in-situ reduction strategy for synthesis of transparent conductive metal meshes using tannic acid-based photoresists 使用单宁酸基光刻胶合成透明导电金属网的受控原位还原策略

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-22 DOI: 10.1016/j.mee.2024.112196

Xubin Guo, Huan Chen, Haihua Wang, Dong Wang, Qianqian Wang, Wenbing Kang

{"title":"Controlled in-situ reduction strategy for synthesis of transparent conductive metal meshes using tannic acid-based photoresists","authors":"Xubin Guo, Huan Chen, Haihua Wang, Dong Wang, Qianqian Wang, Wenbing Kang","doi":"10.1016/j.mee.2024.112196","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112196","url":null,"abstract":"<div><p>Transparent conductive films (TCFs) that converge high transmittance and high conductive properties are essential for many optoelectronic devices, and efforts have been made to acquire films with high transmittance as well as low resistance of the thin layer by low-cost means. Here, we introduce a novel and simple strategy for the controlled <em>in-situ</em> templated synthesis of a transparent conductive metal mesh by utilizing the good reducibility to silver ions of the patterned tannic acid (TA)-based photoresists. To achieve this, mesh patterns with tunable line width were first printed using the TA-based negative photoresists by laser direct writing equipment. Within the patterned domains, the phenolic hydroxyl groups could interact with metal ions and act as reducing agents, thus accelerating the <em>in-situ</em> growth of silver nanoparticles to fabricate silver grids. By changing the line width of the designed patterns and the PH of the plating solution, the metal grids with a high transmission (<em>T</em>) of 91.5% and a thin-layer resistance (<em>R</em><sub>s</sub>) as low as 4.15 Ω sq.<sup>−1</sup> are ultimately achieved after annealing treatment. Our description demonstrates a simple and effective approach that is potentially scalable to other materials as well.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140650788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Organic thin film transistor review based on their structures, materials, performance parameters, operating principle, and applications 基于结构、材料、性能参数、工作原理和应用的有机薄膜晶体管综述

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-18 DOI: 10.1016/j.mee.2024.112193

Somvir Jakher, Rekha Yadav

{"title":"Organic thin film transistor review based on their structures, materials, performance parameters, operating principle, and applications","authors":"Somvir Jakher, Rekha Yadav","doi":"10.1016/j.mee.2024.112193","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112193","url":null,"abstract":"<div><p>Current research focuses on developing inexpensive, adaptable, portable, wearable electronic devices. Organic transistor-based devices play a crucial contribution in these developments. These devices have a low-temperature fabrication process, making it possible to use an extensive range of flexible substrates like cloth, paper, foil, fiber, and plastic. The article discusses a variety of materials used for different layers of the Organic Thin Film Transistor (OTFT). Also highlighting the structural variation, with their performance metrics, which include current, threshold voltage (<span><math><msub><mi>V</mi><mi>T</mi></msub></math></span>), mobility (<span><math><mi>μ</mi></math></span>), subthreshold slope (SS), and current ratio. Additionally, it presents an insight into the operating principle of OTFT to comprehend the conduction process better. A study is carried out for dielectric materials, including organic, inorganic, Self-assembled monolayer (SAM), hybrid, and nanocomposite, along with their benefits and drawbacks. The paper further discusses some crucial uses of organic transistors, such as low-cost Radio frequency identification tag (RFID), organic memory having the quality of three memory types, organic inverters, Deoxyribonucleic Acid (DNA) sensors, Active matrix displays, Gas sensors, Pressure sensors and Chemical sensors adopted two kinds of chemical detection methods from human body and environment. Finally, the article discusses the issues and future prospects of OTFT.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140641444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Physical implementation of cobalt ferrite memristor in Chua's circuit for chaotic encryption Chua 混沌加密电路中钴铁氧体忆阻器的物理实现

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-14 DOI: 10.1016/j.mee.2024.112194

Kiran S. Seetala, William Clower, Matthew Hartmann, Sandra Zivanovic

{"title":"Physical implementation of cobalt ferrite memristor in Chua's circuit for chaotic encryption","authors":"Kiran S. Seetala, William Clower, Matthew Hartmann, Sandra Zivanovic","doi":"10.1016/j.mee.2024.112194","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112194","url":null,"abstract":"<div><p>Memory resistor, or memristor, has been realized as a discrete electronic device and has a perspective application in the field of cryptography. The physical implementation of the memristor in chaotic circuits has been scarcely explored. In this paper, a memristor is fabricated by spin-coating a cobalt ferrite precursor on a processed silicon and is then electro-sputtered with silver to act as the anode with the base silicon as the cathode. This fabrication process has a scalability potential in conjunction with integrated circuit fabrication techniques and complementary metal oxide semiconductor (CMOS) technologies. The fabricated cobalt ferrite memristor has shown a ratio between the on and off resistance of >1000 and has been implemented in a chaotic Chua's circuit, making it one of few physical implementations of a physical memristor in a physical circuit. The analysis and characterization of this circuit using bifurcation diagrams and Lyapunov exponent prove the chaotic behavior of a real Chua's circuit. This chaotic behavior can be useful in chaotic cryptography as nonperiodic oscillations can be leveraged to make sensitive information more difficult to interpret by bad actors.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140618483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint 三维集成电路和 2.5D 封装中的 CNT TSV 技术回顾：从电气角度看进展与挑战

IF 2.3 4区工程技术

Microelectronic Engineering Pub Date : 2024-04-10 DOI: 10.1016/j.mee.2024.112189

M.F. Abdullah, H.W. Lee

{"title":"Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint","authors":"M.F. Abdullah, H.W. Lee","doi":"10.1016/j.mee.2024.112189","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112189","url":null,"abstract":"<div><p>Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC) and 2.5D packaging. Both are within the advanced packaging topic for the digital and analog ICs aligned with More than Moore's paradigm. This article revisits the proposal and progress of carbon nanotubes (CNTs) TSV technology that potentially offers an improvement over the conventional Cu TSV. Today, CNTs TSV has never materialized in commercial products of 3D IC and 2.5D packaging. Compilation on notable numerical modeling works and matching them with related issues in fabrication suggest CNTs TSV technology is still in its infant stage. Although the simulation occasionally shows the advantages of CNTs TSV over Cu TSV in both digital and analog circuits, these results are prone to overestimation. One of the culprits is the number of CNT strands in the bundle which at best can be grown in the fab only <span><math><mo>∼</mo><mn>1</mn><mo>%</mo></math></span> of the theoretically compact bundle used in the <em>RLC</em> and <em>RLGC</em> models. The direction where CNTs TSV is targeting in 3D IC and 2.5D packaging is not clear by several researchers. As the requirements for high-speed digital and high-frequency analog are different, they are important to be sorted out as an essence of this review to project the path of this CNTs TSV technology.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140542815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0