Microelectronic Engineering最新文献

{"title":"A micromachined Joule-Thomson cryocooler for ice lithography","authors":"Limin Qi ,&nbsp;Rui Zheng ,&nbsp;Dongli Liu ,&nbsp;Haiyue Pei ,&nbsp;Ding Zhao ,&nbsp;Min Qiu","doi":"10.1016/j.mee.2024.112180","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112180","url":null,"abstract":"<div><p>A micromachined Joule-Thomson cryocooler has been designed as a cryostage for ice lithography, which allows high-pressure nitrogen throttling to liquefy and fast cool samples with low vibration. The sample can be cooled down to 99.5 K in 30 min and then heated up to room temperature in 10 min. Compared with previous cooling systems based on liquid nitrogen, the Joule-Thomson cryostage has resulted in a significant 90% reduction in cooling time and a decrease in operating temperature by 30 K. Besides, the nitrogen mass-flow rate beneath the sample remains &lt;20 mg/s to minimize vibration. The measured peak-to-peak amplitude at the minimum temperature is about 5.6 nm. As the first cooler integration within an ice lithography system, this Joule-Thomson cryostage not only enables the exploration of a wider range of ice resists, but also can be applied in kinds of microscopes for helping characterize materials at cryogenic temperatures.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140535430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on the 12 in. wafer uniformity of high aspect ratio TSV filling by using rotation cathode","authors":"Chi Zhang ,&nbsp;Guoxian Zeng ,&nbsp;Pengrong Lin ,&nbsp;Hengtong Guo ,&nbsp;ShiMeng Xu ,&nbsp;XiaoChen Xie ,&nbsp;Fuliang Wang","doi":"10.1016/j.mee.2024.112181","DOIUrl":"10.1016/j.mee.2024.112181","url":null,"abstract":"<div><p>In 2.5/3D(2.5/3-dimensional) packages, TSV (Through-Silicon Via) technology is crucial for achieving high performance and low power consumption. However, there are still challenges when it comes to uniformly filling TSVs on 300 mm whole wafers without defects. This study focuses on addressing this issue by designing a rotating cathode carrier with a 300 mm diameter, simulating the plating environment in different areas of a 300 mm wafer. The effects of plating conditions, such as cathode rotational speed and chip mounting position, on the filling of TSV are investigated. The TSV have a hole diameter of 10 μm and a depth of 100 μm.The findings reveal that when the cathode carrier rotates at a speed of 30 rpm, different areas of the analog wafer exhibit complete filling of TSV. Additionally, a surface plating layer with an average thickness of approximately 3 μm is obtained.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140275630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Filament-based memristor switching model","authors":"A.V. Fadeev,&nbsp;K.V. Rudenko","doi":"10.1016/j.mee.2024.112179","DOIUrl":"10.1016/j.mee.2024.112179","url":null,"abstract":"<div><p>The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed for the determination of the constants used in the modeling. The peculiarity of the current-voltage characteristic observed in experimental works is explained.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of nanoscale stencils through focused ion beam milling and dry transfer of silicon-on-nothing membrane with perforations","authors":"Taeyeong Kim,&nbsp;Jungchul Lee","doi":"10.1016/j.mee.2024.112172","DOIUrl":"10.1016/j.mee.2024.112172","url":null,"abstract":"<div><p>Nanoscale stencil lithography, providing sub-micrometer resolutions, is being implemented as a reliable patterning technique within the nanotechnology domain. Despite their advantages such as no resist processing, easy manipulation and reusability, patterning using a nanoscale stencil often faces challenges due to the gap between the nanoscale stencil and the substrate. This tends to result in unwanted pattern blurring, typically dimension wider than intended design. To address this issue, we minimize the gap by conformally attaching the nanoscale stencil to the substrate, thereby effectively eliminating a key factor contributing to the blurring effect. The nanoscale stencil is fabricated by forming nanoslits on the 50 nm thick Silicon-on-Nothing (SON) membrane with perforations, using focused ion beam (FIB) milling. The transfer of this stencil onto a substrate enables conformal adhesion due to its 10<span><math><msup><mrow></mrow><mn>12</mn></msup></math></span> times lower flexural rigidity of the stencil compared to bulk silicon. Upon deposition of chromium and gold through the transferred stencil, a metal pattern array with the full width at half maximum (FWHM) of 43 nm is produced, demonstrating the potential of our approach for fabricating uniform nanoscale patterns with enhanced pattern resolution.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of ion charging effect to improve reactive-ion-etching profile of PbSe grating structures","authors":"Tehere Hemati ,&nbsp;Gang Yang ,&nbsp;Binbin Weng","doi":"10.1016/j.mee.2024.112170","DOIUrl":"10.1016/j.mee.2024.112170","url":null,"abstract":"<div><p>The fabrication of narrow-slot Lead-Selenide (PbSe) gratings is critical for advancing mid-infrared (MIR) device technologies, for applications in spectroscopy, thermal imaging, and environmental monitoring. The primary challenge to achieve this goal is the increased irregularity and reactive ion etching (RIE) lag in etched profiles as slot width decreases. This research highlights the charging effect, attributed to accumulated charge on non-conductive photoresist, as the main cause of these irregularities. Introducing a conductive copper layer neutralizes this charge, enabling successful etching of gratings with significantly improved profiles and slot widths down to 0.7 μm. This solution, offering improved MIR device sensitivity and resolution, and opening new avenues for scientific and practical applications in fields ranging from security to healthcare.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140097648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Double channeled nanotube gate all around field effect transistor with drive current boosted","authors":"Laixiang Qin ,&nbsp;He Tian ,&nbsp;Chunlai Li ,&nbsp;Yiqun Wei ,&nbsp;Jin He ,&nbsp;Yandong He ,&nbsp;Tianling Ren ,&nbsp;Zhangwei Xu ,&nbsp;Yutao Yue","doi":"10.1016/j.mee.2024.112171","DOIUrl":"10.1016/j.mee.2024.112171","url":null,"abstract":"<div><p>Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping with increasingly serious power consumption dissipation and short channel effects (SCE) degradation as the semiconductor technology enters into sub-10 nm technology node. Nanotube GAAFET (NT GAAFET) with inner and outer channels surrounded by inner and outer gates proves to be superior than nanowire GAAFET in drive current (I_on) augmentation and SCEs inhibition attributed to enhanced gate electrostatic integrity, holding promise to expand the Moore's law Roadmap further beyond. Herein, we demonstrate a doubled-channeled NT GAAFET (DC NT GAAFET) structure with I_on (total value) boost in comparison with NT GAAFET and NW GAAFET with the same footprint. I_on gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. I_off (total value) of DC NT GAAFET degrades by 61.8% than that of NT GAAFET. Whereas SS and I_on/I_off ratio are almost comparable in DC NT GAAFET and NT GAAFET, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with respect to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140097657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving performance of cathode NMC-811 by CeO2-coating for Li-ion battery","authors":"Muhammad Fakhrudin ,&nbsp;Evvy Kartini ,&nbsp;Anne Zulfia","doi":"10.1016/j.mee.2024.112169","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112169","url":null,"abstract":"<div><p>The high energy density layered oxide LiNi_0.8Mn_0.1Co_0.1O₂ (NMC811) holds great promise as a cathode material for future Li-ion batteries. However, its application in electric vehicles is hindered by issues such as inadequate cycle performance and rate capability. Additionally, the corrosion caused by the electrolyte poses limitations on high voltage operation. In this study, Cerium Oxide (CeO₂) was used to coat NMC811 using wet chemical method followed by heat treatment. Distilled water was used to dissolve Ce salt instead of ethanol so that it can reduce coating costs and is more environmentally friendly. XRD analysis showed no significant change in the hexagonal crystal structure of NMC811 material but the appearance of small CeO₂ peaks in patterns. Electrochemical test of CeO₂ coated NMC811 exhibited 18% and 9% higher cyclic and rate performance, respectively in comparison to pristine material.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140042142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review of the pressure sensor based on graphene and its derivatives","authors":"Yuwei Guo,&nbsp;Simei Zeng,&nbsp;Qi Liu,&nbsp;Jingye Sun,&nbsp;Mingqiang Zhu,&nbsp;Linan Li,&nbsp;Tao Deng","doi":"10.1016/j.mee.2024.112167","DOIUrl":"10.1016/j.mee.2024.112167","url":null,"abstract":"<div><p>Pressure sensors are widely used in a variety of industrial automatic control environments and in everyday life, including production automatic control, aerospace, healthcare, electronic skin and many other industries. Different structural designs are suitable for different application scenarios. With the development of technology, the demand for high sensitivity and wide range pressure sensors is increasing. The appearance of graphene-based materials has pushed the performance of pressure sensors to new heights. In this paper, the research progress of pressure sensors in the past ten years based on graphene and its derivatives is deeply discussed. According to the classification of application directions based on different substrate structures, the current pressure sensors based on graphene and its derivatives are reviewed. Finally, the current development status of pressure sensing technology based on graphene and its derivatives is summarized, and the development prospect in this field is prospected.</p><p>Index Terms.</p><p>Pressure sensor, Graphene, Graphene derivatives.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140035112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in micro- and bio- electromechanical system architectures for energy efficient chemiresistors","authors":"Bharat Sharma ,&nbsp;Mukesh Kumar ,&nbsp;Ashutosh Sharma","doi":"10.1016/j.mee.2024.112168","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112168","url":null,"abstract":"<div><p>The recent evolution of microelectromechanical systems (MEMSs) presents a more mature technology that expands from pure research towards multidisciplinary nanoelectromechanical systems (NEMS) research. The smaller size of NEMS makes them multifunctional, fast, energy-saving, and sensitive to any external stimuli. The extreme sensitivity of these NEMS opens new avenues to the various industrial sector of applications in biosensing, gas sensing, and medical implants which won't be possible with traditional MEMS counterparts. Most of the resistive-gas sensors are more popular than others but their elevated working temperatures consume more energy and limit their real-world applications. Various self-heating, embedded MEMS microheaters, and materials have been explored to improve the sensing performance. Thus, there is an urgent need of the hour to review the associated manufacturing techniques and evolution of MEMS fabrication for energy-saving gas sensors and new developments in this area. We overview the various manufacturing process and developments in MEMS/NEMS for gas sensor applications, and their historical perspectives, and provide future guidelines to meet the existing challenges for real-world gas sensing applications.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0167931724000376/pdfft?md5=2982089a37b8fa2f8587db994aaec00c&pid=1-s2.0-S0167931724000376-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140095924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices","authors":"Dhananjay D. Kumbhar ,&nbsp;Sanjay Kumar ,&nbsp;Mayank Dubey ,&nbsp;Amitesh Kumar ,&nbsp;Tukaram D. Dongale ,&nbsp;Somanath D. Pawar ,&nbsp;Shaibal Mukherjee","doi":"10.1016/j.mee.2024.112166","DOIUrl":"https://doi.org/10.1016/j.mee.2024.112166","url":null,"abstract":"<div><p>Memristive devices have emerged as promising alternatives to traditional complementary metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems. These two-terminal electronic devices, known for their non-volatile memory properties, can emulate synaptic behavior within artificial neural networks, offering remarkable advantages, including scalability, energy efficiency, rapid operation, compact size, and ease of fabrication. They hold the potential to serve as fundamental components for artificial neurons, revolutionizing neuromorphic computing systems by closely mimicking biological neurons. However, the integration of resistive random-access memory (RRAM) into commercial production faces challenges due to substantial variations in resistive switching (RS) parameters, which include cycle-to-cycle (C2C) and device-to-device (D2D) fluctuations. These variations are rooted in the stochastic nature of RS, linked to physical mechanisms like diffusion and redox reactions. Nonetheless, limitations exist in the current analytical approaches, emphasizing the need for more standardized tools to assess memristive device reliability consistently. Weibull distribution is widely used to analyze RRAM variability and many further studies are based on it. However, this distribution may not work well for some memristive devices. In such cases, one can use other statistical distributions available in the literature. In the present work, statistical distributions, namely Weibull, Exponential, Log-Normal, Gamma, and Logistic distributions, are employed to scrutinize memristive devices device parameters, shedding light on their performance and reliability. Also, analytical methods namely maximum likelihood estimates for parameter estimation and Kolmogorov-Smirnov test for assessing goodness of fit of the distributions are used. This study aims to provide an approach with a deeper understanding of memristive device parameters and analysis techniques.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139985689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}