Improved positive bias temperature instability of n-type vertical C-shaped-channel nanosheet FET by forming gas annealing

IF 2.6 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2025-05-16 DOI:10.1016/j.mee.2025.112357

Yunfei Shi , Songyi Jiang , Hong Yang , Yongkui Zhang , Longda Zhou , Zhigang Ji , Qianqian Liu , Qi Wang , Huilong Zhu , Jun Luo , Wenwu Wang

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Abstract

In this article, the influence of Forming Gas Annealing (FGA) on the Positive Bias Temperature Instability (PBTI) characteristics of n-vertical C-shaped-channel nanosheet FET (n-VCNFET) is studied. The experimental results show that the extra FGA can significantly suppress both the initial and generated interface traps in PBTI. Moreover, in ultra-fast PBTI the pre-existing trap and total trap of VCNFET due to FGA decreases by 35 % and 31 %, respectively. The energy level of the oxide trap under PBTI and recovery doesn't change, in other words, the FGA induces the oxide trap density of the devices to decrease by 36 % at 125 °C and 1.4 V V_OV. The optimization effect of FGA annealing has been further confirmed from the perspective of trap generation. It provides a guideline for the PBTI improvement of VCNFET in trap scopes.

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形成气体退火改善n型垂直c形通道纳米片场效应管的正偏置温度不稳定性

本文研究了成形气体退火（FGA）对n-垂直c形沟道纳米片场效应管（n-VCNFET）正偏置温度不稳定性（PBTI）特性的影响。实验结果表明，额外的FGA可以显著抑制PBTI中初始和生成的界面陷阱。此外，在超高速PBTI中，由于FGA导致的VCNFET的原有陷阱和总陷阱分别减少了35%和31%。在125°C和1.4 V VOV下，FGA诱导器件的氧化阱密度降低了36%。从陷阱生成的角度进一步证实了FGA退火的优化效果。为VCNFET在陷阱范围内的PBTI改进提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.