A new tunable floating memristor emulator circuit with long-term memory

IF 3.1 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronic Engineering Pub Date : 2025-05-02 DOI:10.1016/j.mee.2025.112355

Jiaheng Pan , Yanwei Sun , Shengyao Jia , Xudong Shen , Yiran Wang , Shien Wu , Cheng Pan , Mang Shi , Ge Shi

{"title":"A new tunable floating memristor emulator circuit with long-term memory","authors":"Jiaheng Pan , Yanwei Sun , Shengyao Jia , Xudong Shen , Yiran Wang , Shien Wu , Cheng Pan , Mang Shi , Ge Shi","doi":"10.1016/j.mee.2025.112355","DOIUrl":null,"url":null,"abstract":"<div><div>In this research article, we propose a tunable floating-type memristor emulator circuit with long-term memory (LTM) capabilities. The overall circuit consists of a Voltage Differential Transconductance Amplifier (VDTA), a Voltage Differential Complementary Amplifier (VDCA), and other basic components. The proposed emulator effectively prevents charge leakage on the capacitor by incorporating a switching circuit, thereby achieving long-term memory functionality. The emulator operates stably at a frequency of 10 MHz and supports seamless switching between incremental and decremental modes by altering the polarity of the input voltage. Moreover, the emulator exhibits excellent tunability, allowing adjustments to the equivalent memristor model by modifying the bias voltage and the aspect ratio of MOS transistors. The proposed emulator has been laid out and simulated using TSMC 0.18 μm process parameters in the Cadence Virtuoso platform. The simulation results align perfectly with the design and analysis, confirming the feasibility of the circuit. Finally, we explore potential applications of the proposed emulator in read-write circuit and memristor array circuit.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112355"},"PeriodicalIF":3.1000,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000449","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this research article, we propose a tunable floating-type memristor emulator circuit with long-term memory (LTM) capabilities. The overall circuit consists of a Voltage Differential Transconductance Amplifier (VDTA), a Voltage Differential Complementary Amplifier (VDCA), and other basic components. The proposed emulator effectively prevents charge leakage on the capacitor by incorporating a switching circuit, thereby achieving long-term memory functionality. The emulator operates stably at a frequency of 10 MHz and supports seamless switching between incremental and decremental modes by altering the polarity of the input voltage. Moreover, the emulator exhibits excellent tunability, allowing adjustments to the equivalent memristor model by modifying the bias voltage and the aspect ratio of MOS transistors. The proposed emulator has been laid out and simulated using TSMC 0.18 μm process parameters in the Cadence Virtuoso platform. The simulation results align perfectly with the design and analysis, confirming the feasibility of the circuit. Finally, we explore potential applications of the proposed emulator in read-write circuit and memristor array circuit.

Abstract Image

查看原文本刊更多论文

一种具有长期记忆的可调浮动忆阻器仿真电路

在这篇研究文章中，我们提出了一种具有长期记忆（LTM）功能的可调谐浮点型忆阻器仿真电路。整个电路由电压差分跨导放大器（VDTA）、电压差分互补放大器（VDCA）和其他基本元件组成。所提出的仿真器通过集成开关电路有效地防止电容器上的电荷泄漏，从而实现长期记忆功能。仿真器在10mhz的频率下稳定工作，并通过改变输入电压的极性支持增量和递减模式之间的无缝切换。此外，该仿真器具有优异的可调性，允许通过修改MOS晶体管的偏置电压和宽高比来调整等效忆阻器模型。该仿真器采用TSMC 0.18 μm工艺参数，在Cadence Virtuoso平台上进行了仿真。仿真结果与设计和分析结果吻合较好，验证了该电路的可行性。最后，探讨了该仿真器在读写电路和忆阻阵列电路中的潜在应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Microelectronic Engineering 工程技术-工程：电子与电气

CiteScore

5.30

自引率

4.30%

发文量

131

审稿时长

29 days

期刊介绍： Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.