Jiaheng Pan , Yanwei Sun , Shengyao Jia , Xudong Shen , Yiran Wang , Shien Wu , Cheng Pan , Mang Shi , Ge Shi
{"title":"一种具有长期记忆的可调浮动忆阻器仿真电路","authors":"Jiaheng Pan , Yanwei Sun , Shengyao Jia , Xudong Shen , Yiran Wang , Shien Wu , Cheng Pan , Mang Shi , Ge Shi","doi":"10.1016/j.mee.2025.112355","DOIUrl":null,"url":null,"abstract":"<div><div>In this research article, we propose a tunable floating-type memristor emulator circuit with long-term memory (LTM) capabilities. The overall circuit consists of a Voltage Differential Transconductance Amplifier (VDTA), a Voltage Differential Complementary Amplifier (VDCA), and other basic components. The proposed emulator effectively prevents charge leakage on the capacitor by incorporating a switching circuit, thereby achieving long-term memory functionality. The emulator operates stably at a frequency of 10 MHz and supports seamless switching between incremental and decremental modes by altering the polarity of the input voltage. Moreover, the emulator exhibits excellent tunability, allowing adjustments to the equivalent memristor model by modifying the bias voltage and the aspect ratio of MOS transistors. The proposed emulator has been laid out and simulated using TSMC 0.18 μm process parameters in the Cadence Virtuoso platform. The simulation results align perfectly with the design and analysis, confirming the feasibility of the circuit. Finally, we explore potential applications of the proposed emulator in read-write circuit and memristor array circuit.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"299 ","pages":"Article 112355"},"PeriodicalIF":3.1000,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new tunable floating memristor emulator circuit with long-term memory\",\"authors\":\"Jiaheng Pan , Yanwei Sun , Shengyao Jia , Xudong Shen , Yiran Wang , Shien Wu , Cheng Pan , Mang Shi , Ge Shi\",\"doi\":\"10.1016/j.mee.2025.112355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this research article, we propose a tunable floating-type memristor emulator circuit with long-term memory (LTM) capabilities. The overall circuit consists of a Voltage Differential Transconductance Amplifier (VDTA), a Voltage Differential Complementary Amplifier (VDCA), and other basic components. The proposed emulator effectively prevents charge leakage on the capacitor by incorporating a switching circuit, thereby achieving long-term memory functionality. The emulator operates stably at a frequency of 10 MHz and supports seamless switching between incremental and decremental modes by altering the polarity of the input voltage. Moreover, the emulator exhibits excellent tunability, allowing adjustments to the equivalent memristor model by modifying the bias voltage and the aspect ratio of MOS transistors. The proposed emulator has been laid out and simulated using TSMC 0.18 μm process parameters in the Cadence Virtuoso platform. The simulation results align perfectly with the design and analysis, confirming the feasibility of the circuit. Finally, we explore potential applications of the proposed emulator in read-write circuit and memristor array circuit.</div></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":\"299 \",\"pages\":\"Article 112355\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931725000449\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000449","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A new tunable floating memristor emulator circuit with long-term memory
In this research article, we propose a tunable floating-type memristor emulator circuit with long-term memory (LTM) capabilities. The overall circuit consists of a Voltage Differential Transconductance Amplifier (VDTA), a Voltage Differential Complementary Amplifier (VDCA), and other basic components. The proposed emulator effectively prevents charge leakage on the capacitor by incorporating a switching circuit, thereby achieving long-term memory functionality. The emulator operates stably at a frequency of 10 MHz and supports seamless switching between incremental and decremental modes by altering the polarity of the input voltage. Moreover, the emulator exhibits excellent tunability, allowing adjustments to the equivalent memristor model by modifying the bias voltage and the aspect ratio of MOS transistors. The proposed emulator has been laid out and simulated using TSMC 0.18 μm process parameters in the Cadence Virtuoso platform. The simulation results align perfectly with the design and analysis, confirming the feasibility of the circuit. Finally, we explore potential applications of the proposed emulator in read-write circuit and memristor array circuit.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.