Micromachines最新文献

{"title":"Arch-Shaped Triboelectric Nanogenerator Based on PTFE, Paper, and Aluminum for Sustainable Energy Harvesting.","authors":"Izhar Hussain, Kok Boon Ching, Shamsuddin Lakho, Safdar Ali Abro, Ghulam E Mustafa Abro, Sufyan Ali Memon, Muhammad Aslam","doi":"10.3390/mi17091044","DOIUrl":"10.3390/mi17091044","url":null,"abstract":"<p><p>The growing adoption of flexible and portable electronic devices has created an increasing need for sustainable power sources that can operate without relying on conventional batteries. Triboelectric nanogenerators (TENGs) have attracted significant attention due to their ability to convert ambient mechanical energy into electrical energy. However, practical contact-separation TENGs may require additional spacers, elastic supports, or other structural components to maintain repeated contact and separation. This study presents a spacer-free arch-shaped TENG based on a laminated structure consisting of polytetrafluoroethylene (PTFE), paper, and aluminum. The arch configuration provides an inherent restoring tendency that facilitates contact-separation operation without a discrete spacer or additional elastic support. The fabricated device was experimentally evaluated through open-circuit voltage, short-circuit current, load-dependent electrical characterization, power measurement, capacitor charging, and LED illumination. Under the manual mechanical actuation conditions used in the present study, the device exhibited a maximum open-circuit voltage of 69 V, a reported peak short-circuit current of 68 μA, and a peak power output of 8.576 μW at an optimal load resistance of approximately 55 MΩ. Furthermore, the TENG charged a 4.7 µF capacitor to 7 V within approximately 60 s and directly illuminated 30 commercial light-emitting diodes (LEDs). These results demonstrate the feasibility of combining a simple spacer-free arch-shaped configuration with readily available materials for low-cost triboelectric energy harvesting. Long-term cyclic durability, controlled mechanical excitation, environmental stability, and matched structural control experiments remain important areas for future investigation.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13608912/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"μFlow: A Computational Platform for Microfluidic Hall-Effect Magnetic Bead Detection with Parametric Design Optimization.","authors":"Harshitha Govindaraju, Umer Hassan","doi":"10.3390/mi17091042","DOIUrl":"10.3390/mi17091042","url":null,"abstract":"<p><p>Microfluidic Hall-effect biosensors detect superparamagnetic bead labels as they flow past a thin-film Hall element in a microchannel. Designing one couples bead magnetization, stray-field distribution, Hall transport, and channel flow across 14 parameters that finite-element solvers explore only at minutes to hours per configuration. We present a coupled analytical-numerical framework for this signal chain: Clausius-Mossotti bead magnetization with a volume fraction correction, a point-dipole stray field, a volume-averaged Hall voltage, Poiseuille transport, and a Johnson-Nyquist and Hooge 1/f noise model, evaluated across 12 sensor presets compiled from the literature, spanning graphene, III-V semiconductors, Si CMOS, bismuth, and topological insulators; any other platform can be defined from user-supplied transport parameters. Benchmarked against a companion COMSOL Multiphysics 6.0 study, the framework reproduces the Hall voltage to within 4.8% at a favorable bead-to-sensor area ratio and deviates by 22% and 15% at off-optimum geometries, consistent with the point-dipole near-field limit at h/rb=1. Three design rules follow: a signal-to-noise ridge at sensor widths comparable to the bead diameter (w*≈db; area ratios 0.4-1.0 at constant voltage, 0.5-2.6 at constant current), matching reported single-bead geometries; a material choice that must be made under an explicit electrical drive constraint; and a sampling-limited flow-velocity window. Predicted signals agree at the order-of-magnitude level with published InAs and Si CMOS experiments. We release the model as a freely accessible, no-install browser implementation with a built-in 2D axisymmetric magnetostatic finite-element (FEM) solver that maps where the dipole approximation degrades.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609642/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integration of Artificial Intelligence and Microfluidics for Drug Delivery Applications.","authors":"Shiqi Tang, Xunli Zhang","doi":"10.3390/mi17091041","DOIUrl":"10.3390/mi17091041","url":null,"abstract":"<p><p>The development of drug delivery systems (DDSs) is moving from empirical, trial-and-error formulation toward data-driven, artificial intelligence (AI)-guided, and automated workflows. Microfluidics provides precise control of microscale fluids, enabling high-throughput production of relatively homogeneous drug carriers such as liposomes, lipid nanoparticles (LNPs), and polymeric micelles. However, the high-dimensional parameter space of microfluidic reactors often exceeds the capacity of manual optimization. This review examines the integration of AI, particularly machine learning (ML), deep learning (DL), and Bayesian optimization, into microfluidic platforms for accelerating DDS design, optimizing critical quality attributes (CQAs), and supporting self-driving laboratory workflows. We discuss the technical foundations of AI-enabled microfluidics, applications in nanocarrier synthesis and phenotypic screening, and the evolving regulatory landscape for AI-assisted pharmaceutical development.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609520/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on Memristors in Hardware Security.","authors":"Zihan Zhong, Chenqi Dai, Guangfu Luo, Yaoyao Jin, Xuenan Peng, Tao Wang, Shuai Zhang, Cong Ye","doi":"10.3390/mi17091040","DOIUrl":"10.3390/mi17091040","url":null,"abstract":"<p><p>As the deep integration of the Internet of Things (IoT) and artificial intelligence (AI) technologies has rendered traditional encryption techniques increasingly inadequate in terms of security strength, the implementation of hardware-level security solutions has been identified as a critical issue in the design of information systems. Memristors, as passive circuit components with their intrinsic stochastic switching behavior, multistate storage capability, and low power consumption, have been exploited to provide a viable approach for the construction of hardware security primitives, including true random number generators (TRNGs) and physically unclonable functions (PUFs). In this review, the latest research advances in memristor-based hardware security technologies were systematically surveyed from three perspectives, namely TRNGs, PUFs and other security schemes. With regard to TRNGs and PUFs, respectively, we have systematically summarized their characteristics, including throughput, power consumption and randomness quality, as well as uniqueness, reliability and methods, with particular attention paid to the types of entropy sources and bit-generation strategies. In addition, the potential application of other memristor-based hardware security solutions in information hiding, encrypted transmission and authentication was also analyzed. Subsequently, the principal challenges impeding the transition from laboratory research to mass production were summarized, encompassing synergistic integration with advanced CMOS processes, the balance between reliability and stochasticity, and the absence of design methodologies that integrate hardware and software. Future development trajectories were further delineated, including cross-layer optimization across devices, circuits, and systems, the design of high-security chips resistant to machine learning attacks, CMOS-compatible stable implementation schemes, and the on-chip integration of TRNGs, PUFs, and encryption engines. The present review is intended to serve as a systematic reference for the design of novel hardware security systems, thereby paving the way for the practical deployment of memristor-based security technologies.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609069/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research Progress on the Structure and Properties of Medical Bone Implants Based on Additive Manufacturing.","authors":"Hongtao Yu, Yanquan Tong, Bingwei Gao, Feng Wang","doi":"10.3390/mi17091043","DOIUrl":"10.3390/mi17091043","url":null,"abstract":"<p><p>Conventional medical bone implants exhibit severe mechanical mismatch with native bone, which easily induces adverse outcomes including stress shielding and implant loosening. Additive manufacturing (AM) provides a novel strategy to fabricate patient-specific implants with complex geometric architectures. Based on the additive manufacturing of medical bone implants, this paper summarizes the design criteria, structural types, design methods and performance control mechanisms, and deeply analyzes the influence mechanism of structural design on elastic modulus matching, fatigue performance, osseointegration and wear resistance. The research shows that the elastic modulus of implants can be effectively matched to that of native bone and osseointegration can be promoted by accurately regulating the porosity, pore size and topological configuration. The present work provides theoretical guidance for the structural optimization design and clinical translation of high-performance bone implants.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609608/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced Electronic Packaging Technologies: A Comparative Review of Architectures, Applications, Reliability.","authors":"Yuxian Huang, Dingguan Wang, Qianyi Li, Zhiming Pan","doi":"10.3390/mi17091039","DOIUrl":"10.3390/mi17091039","url":null,"abstract":"<p><p>As transistor scaling approaches physical and economic limits, advanced packaging has become an important approach to continued system scaling. This review compares two-dimensional (2D), two- and-a-half-dimensional (2.5D), and three-dimensional (3D) integration technologies, including silicon interposers, localized silicon bridges, redistribution layer (RDL) fan-out platforms, and vertical die stacking. The comparison focuses on interconnect geometry, bandwidth, energy efficiency, thermal and mechanical constraints, manufacturing maturity, cost, and major failure mechanisms. Representative applications in power electronics, high-performance computing (HPC), artificial intelligence (AI), radio frequency (RF) systems, and micro-electromechanical systems (MEMS) are discussed together with their packaging requirements. The relationships between package structure and thermal, mechanical, and electrical reliability are also examined. Emerging technologies, including vertical power delivery, glass substrates, hybrid bonding, and AI-assisted multiphysics design, are further discussed in terms of their role in future heterogeneous integration. Finally, a near-, medium-, and long-term roadmap is presented to summarize the main scaling targets and qualification requirements for larger, denser, and higher-power integrated systems.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13608927/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Electromechanical Characteristics of Piezoelectric Unimorph Actuators Under Thermal-Vacuum Conditions Relevant to Low Earth Orbit.","authors":"Laurynas Šišovas, Linas Juknevičius, Andrius Čeponis","doi":"10.3390/mi17091038","DOIUrl":"10.3390/mi17091038","url":null,"abstract":"<p><p>Piezoelectric unimorph actuators are promising candidates for precision actuation systems in small satellites, where their electromechanical performance must remain predictable under vacuum and temperature variations. However, actuator performance is determined not only by the piezoelectric material but also by the passive layer and bonding interface, whose combined influence under thermal-vacuum conditions requires systematic evaluation. This study presents a numerical and experimental investigation of the temperature-dependent electromechanical characteristics of piezoelectric unimorph actuators incorporating PIC 181 piezoceramic plates, passive layers made of 7075-T6 aluminum or Ti-6Al-4V titanium, and three different vacuum-compatible bonding materials. Numerical analyses were performed to determine modal, impedance-frequency, and displacement-frequency characteristics over the temperature range of 253.15-323.15 K, while experimental investigations under vacuum conditions quantified the additional influence of the bonding interface. Increasing temperature caused a decrease in resonance frequency for both passive-layer configurations. Actuators with Ti-6Al-4V passive layers generally exhibited higher resonance frequencies, lower impedance values, and larger displacement amplitudes than those with 7075-T6 aluminum passive layers. The maximum measured displacement amplitudes reached 23.11 µm for the aluminum-based actuator and 29.67 µm for the titanium-based actuator at 323.15 K. Among the investigated bonding materials, BM No. 3 consistently provided the lowest impedance and highest displacement response. The results demonstrate that passive-layer and bonding-material selection should be considered jointly and identify the Ti-6Al-4V/BM No. 3 combination as the most favorable among the investigated configurations for resonant piezoelectric unimorph actuation under the tested thermal-vacuum conditions.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609265/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Viscosity Model for Blood Flows in Narrow Channels at High Reynolds Numbers Incorporating a Cell-Free Layer.","authors":"Max Lihs, Finn Knüppel, Benjamin Torner, Mario Hahne, Calvin Wolfgramm, Ang Sun, Jeanette Hussong, Frank-Hendrik Wurm","doi":"10.3390/mi17091030","DOIUrl":"10.3390/mi17091030","url":null,"abstract":"<p><p>To better understand the actual flow fields in blood-contacting mechanical medical devices, such as ventricular assist devices (VADs), accurate in vitro and in silico studies are essential. Traditionally, these studies have treated blood as a single-phase fluid. In reality, however, blood is a multi-phase fluid consisting of plasma and suspended blood cells. Cell migration leads to heterogeneous cell distribution, which significantly impacts flow dynamics, particularly in the narrow gaps of these devices. This migration is not usually considered in in vitro analyses using blood analog fluids or in in silico simulations of VADs. This study presents an advanced viscosity modeling approach that accounts for cell migration effects under gap-relevant conditions. The model is based on local particle distribution data obtained from experiments with blood and particle-laden blood analog fluids in microchannels. It is applicable to both blood and particle-laden blood analog fluids, covering gap heights of 150 µm, Reynolds numbers in the range of 50 < Re < 150 and particle volume fractions of up to 30%. Previous works have investigated blood flows with significantly lower volume fractions of up to 5%. The model's accuracy was validated by comparing results with experimental data on pressure losses of blood flowing through a microchannel, demonstrating good agreement. By incorporating variations in local viscosity, this enhanced viscosity distribution model improves the accuracy of flow simulations, offering a more realistic representation of blood flow in narrow gaps compared to the single-phase assumption. Future work will extend the model to accommodate physiological particle volume fractions of up to 45%.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609374/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"RRAM-Based Neuromorphic Devices for Artificial-Intelligence Hardware: Device Physics, Materials, Processing, and Packaging.","authors":"Sung Gyu Pyo","doi":"10.3390/mi17091032","DOIUrl":"10.3390/mi17091032","url":null,"abstract":"&lt;p&gt;&lt;p&gt;Resistive random-access memory (RRAM) has emerged as one of the most promising device platforms for neuromorphic, in-memory computing because its two-terminal metal-insulator-metal (MIM) structure can reproduce the weight-update behavior of biological synapses while remaining compatible with mainstream CMOS processing. This review summarizes the current state of RRAM-based neuromorphic technology from four complementary perspectives: device physics, materials, fabrication processes, and packaging. We first describe the operating principles of filamentary and interface-type RRAM, including the forming/set/reset switching sequence, and the two dominant analytical frameworks used to describe the reset transition-the ion-migration model and the thermally driven filament-dissolution model. We then review the switching-layer and electrode materials that have been most widely investigated such as HfO&lt;sub&gt;x&lt;/sub&gt;, TiO&lt;sub&gt;x&lt;/sub&gt;, TaO&lt;sub&gt;x&lt;/sub&gt;, ZnO, ZrO&lt;sub&gt;2&lt;/sub&gt;, and Cu/Ag-based conductive-bridge systems, together with representative bilayer and doped architectures reported for synaptic devices. The biological functions that RRAM can emulate are discussed alongside the non-ideal characteristics that currently limit on-chip training accuracy, with emphasis on separating device-to-device from cycle-to-cycle variability and on the workload-dependent nature of endurance and retention requirements. We further summarize the process technologies used to integrate RRAM into large-scale, CMOS-compatible arrays, including atomic layer deposition, interfacial oxygen-reservoir engineering, low-thermal-budget back-end-of-line integration, and three-dimensional vertical RRAM patterning, and discuss the advanced packaging strategies such as 2.5D/3D heterogeneous integration, chiplet architectures, thermal-interface materials, and nanostructured underfills required to manage the power density and interconnect demands of large synaptic arrays, distinguishing solutions that have been demonstrated specifically for RRAM neuromorphic arrays from those that remain general advanced-packaging concepts. Finally, RRAM is benchmarked against competing emerging non-volatile memories, and the key research directions such as three-terminal memtransistor architectures, three-dimensional integration with high-performance selectors, and hardware-algorithm co-design that will determine whether RRAM-based neuromorphic hardware can move from laboratory demonstrations to on-device AI, autonomous systems, and large-scale artificial-neural-network accelerators are outlined. Relative to prior reviews that focus primarily on RRAM device physics or on switching-layer materials in isolation, the distinctive contribution of this review is an explicit, cross-layer synthesis that connects device-level non-idealities to their consequences for wafer-scale process integration and for advanced 2.5D/3D packaging-a combination that, to our knowledge, has not been jointly treated in the recent ","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13609352/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CMOS-MEMS Z-Axis Magnetic Field Sensor with an Additional Collector.","authors":"Zhi-Xuan Dai, Rong-Wei Tsai, Qing-Hua Shih, Cheng-Chih Hsu","doi":"10.3390/mi17091029","DOIUrl":"10.3390/mi17091029","url":null,"abstract":"<p><p>A complementary metal oxide semiconductor (CMOS)-compatible <i>z</i>-axis magnetic field sensor incorporating an additional collector is proposed to enhance magnetic sensing performance. The sensor consists of four identical magnetic sensing elements arranged in a cross-shaped configuration, while shallow trench isolation (STI) and a post-CMOS cavity structure are employed to suppress substrate leakage current and improve electrical isolation. The sensing characteristics were investigated using three-dimensional TCAD simulations to analyze carrier transport and current density distributions under different magnetic fields. The simulation results confirmed that the structure effectively enhances the differential output response and magnetic sensitivity. The device was fabricated using a commercial CMOS process followed by a simple post-CMOS micromachining process. Optical microscope and scanning electron microscope observations verified the successful formation of the sensing structure and the cavity beneath the sensing elements. The sensor was experimentally characterized under magnetic fields ranging from -300 to 300 mT. The measured results exhibited excellent linearity over the entire measurement range. The sensor achieved a measured sensitivity of 120 mV/T. Owing to its high sensitivity, simple fabrication process, and full compatibility with standard CMOS technology, the magnetic field sensor is promising for integrated microsystems, industrial monitoring, and intelligent sensing applications.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":"17 9","pages":""},"PeriodicalIF":3.5,"publicationDate":"2026-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13608898/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149062342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}