A Method for Fabricating Cavity-SOI and Its Verification Using Resonant Pressure Sensors.

Abstract

Cavity silicon on insulator (Cavity-SOI) offers significant design flexibility for microelectromechanical systems (MEMS). Notably, the shape and depth of the cavity can be tailored to specific requirements, facilitating the realization of intricate multi-layer structural designs. The novelty of the proposed fabrication methodology is manifested in its employment of a micromachining process flow, which integrates dry etching, wafer level Au-Si eutectic bonding, and chemical mechanical polishing (CMP) to create Cavity-SOI. This innovative approach substantially mitigates the complexity of fabrication, and the implementation of wafer-level gold-silicon eutectic bonding and vacuum packaging can be achieved, representing a distinct advantage over conventional methods. To evaluate the technical viability, a MEMS resonant pressure sensor (RPS) was designed. Experimental findings demonstrate that during the formation of Cavity-SOI, dry etching can accurately fabricate cavities of predefined dimensions, wafer-level Au-Si eutectic bonding can achieve efficient sealing, and CMP can precisely regulate the depth of cavities, thus validating the feasibility of the Cavity-SOI formation process. Additionally, when implementing Cavity-SOI in the fabrication of MEMS RPS, it enables the spontaneous release of resonators, effectively circumventing the undercut and adhesion issues commonly encountered with hydrofluoric acid (HF) release. The sensors fabricated using Cavity-SOI exhibit a sensitivity of 100.695 Hz/kPa, a working temperature range spanning from -10-60 °C, a pressure range of 1-120 kPa, and a maximum error of less than 0.012% full scale (FS). The developed micromachining process for Cavity-SOI not only streamlines the fabrication process but also addresses several challenges inherent in traditional MEMS fabrication. The successful fabrication and performance validation of the MEMS RPS confirm the effectiveness and practicality of the proposed method. This breakthrough paves the way for the development of high-performance MEMS devices, opening up new possibilities for various applications in different industries.