{"title":"Research on Multiphysics-Driven MEMS Safety and Arming Devices.","authors":"Xinyu Fan, Tengjiang Hu, Yifei Wang, Yulong Zhao, Zhongwang Tian, Wei Xue","doi":"10.3390/mi15101194","DOIUrl":"https://doi.org/10.3390/mi15101194","url":null,"abstract":"<p><p>As the core component of energy transfer in weapon system, safety and arming (S&A) devices affect the safety, reliability, and damage ability of the weapon. Micro-electromechanical systems (MEMS) S&A devices have been widely investigated for their smaller structure size, higher functional integration, and better smart functionality. This paper proposes the design of a multi-physics field-driven MEMS S&A device. The S&A mechanism is composed of a setback mechanism, a spin mechanism, and an electrothermal mechanism, achieving multiphysics-arming. With the coordination of the three mechanisms, the S&A device can produce a 1 mm displacement. The displacement generated allows the S&A device to switch between safety status and arming status. The unlock conditions and overload resistance of each mechanism are obtained by finite element simulation. Based on SOI wafers and silicon oxide wafers, the chips were fabricated and packaged. Several tests were carried out to verify the working condition and overload resistance of the S&A device. The result shows that under a voltage of 11 V and a rotation speed of 8000 r/min, with a size no more than 10 mm × 10 mm × 1.5 mm, the device works smoothly and can withstand an overload of 25,000 g.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509210/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MicromachinesPub Date : 2024-09-25DOI: 10.3390/mi15101187
Koosha Karimi, Ali Fardoost, Mehdi Javanmard
{"title":"Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications.","authors":"Koosha Karimi, Ali Fardoost, Mehdi Javanmard","doi":"10.3390/mi15101187","DOIUrl":"https://doi.org/10.3390/mi15101187","url":null,"abstract":"<p><p>The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/performance benefits, scalability, and control over short-channel effects. Simulations provide insights into functionality and leakage, addressing off-current issues common in narrow band-gap materials within a CMOS-compatible process. Multiple structures have been introduced for FinFETs. Moreover, some studies on the fabrication of FinFETs using different materials have been discussed. Despite their potential, challenges like corner effects, quantum effects, width quantization, layout dependencies, and parasitics have been acknowledged. In the post-planar CMOS landscape, FinFETs show potential for scalability in nanoscale CMOS, which leads to novel structures for them. Finally, recent developments in FinFET-based sensors are discussed. In a general view, this comprehensive review delves into the intricacies of FinFET fabrication, exploring historical development, classifications, and cutting-edge ideas for the used materials and FinFET application, i.e., sensing.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509352/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Development of Second Prototype of Twin-Driven Magnetorheological Fluid Actuator for Haptic Device.","authors":"Takehito Kikuchi, Asaka Ikeda, Rino Matsushita, Isao Abe","doi":"10.3390/mi15101184","DOIUrl":"https://doi.org/10.3390/mi15101184","url":null,"abstract":"<p><p>Magnetorheological fluids (MRFs) are functional fluids that exhibit rapid and reproducible rheological responses to external magnetic fields. An MRF has been utilized to develop a haptic device with precise haptic feedback for teleoperative surgical systems. To achieve this, we developed several types of compact MRF clutches for haptics (H-MRCs) and integrated them into a twin-driven MRF actuator (TD-MRA). The first TD-MRA prototype was successfully used to generate fine haptic feedback for operators. However, undesirable torque ripples were observed due to shaft misalignment and the low rigidity of the structure. Additionally, the detailed torque control performance was not evaluated from both static and dynamic current inputs. The objective of this study is to develop a second prototype to reduce torque ripple by improving the structure and evaluating its static and dynamic torque performance. Torque performance was measured using both constant and stepwise current inputs. The coefficient of variance of the torque was successfully reduced by half due to the structural redesign. Although the time constants of the H-MRC were less than 10 ms, those of the TD-MRA were less than 20 ms under all conditions. To address the slower downward output response, we implemented an improved input method, which successfully halved the response time.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509646/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MicromachinesPub Date : 2024-09-25DOI: 10.3390/mi15101188
Xinye Fan, Jiawang Shi, Yiren Chen, Guoqing Miao, Hong Jiang, Hang Song
{"title":"A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales.","authors":"Xinye Fan, Jiawang Shi, Yiren Chen, Guoqing Miao, Hong Jiang, Hang Song","doi":"10.3390/mi15101188","DOIUrl":"https://doi.org/10.3390/mi15101188","url":null,"abstract":"<p><p>This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people's lifestyles. The development process of group-III nitride LEDs is the sum of challenges and solutions constantly encountered with shrinking size. Therefore, this paper uses these challenges and solutions as clues for review. It begins with reviewing the development of group-III nitride materials and substrates. On this basis, some key technological breakthroughs in the development of group-III nitride LEDs are reviewed, mainly including substrate pretreatment and p-type doping in material growth, the proposal of new device structures such as nano-LED and quantum dot (QD) LED, and the improvement in luminous efficiency, from the initial challenge of high-efficiency blue luminescence to current challenge of high-efficiency ultraviolet (UV) and red luminescence. Then, the development of micro-LEDs based on group-III nitride LEDs is reviewed in detail. As a new type of display device, micro-LED has drawn a great deal of attention and has become a research hotspot in the current international display area. Finally, based on micro-LEDs, the development trend of nano-LEDs is proposed, which is greener and energy-saving and is expected to become a new star in the future display field.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509752/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MicromachinesPub Date : 2024-09-25DOI: 10.3390/mi15101186
Álvaro B Rocha, Eisenhawer de M Fernandes, Joyce I V Souto, Ricardo S Gomez, João M P Q Delgado, Felipe S Lima, Railson M N Alves, André L D Bezerra, Antonio G B Lima
{"title":"Development of Anemometer Based on Inertial Sensor.","authors":"Álvaro B Rocha, Eisenhawer de M Fernandes, Joyce I V Souto, Ricardo S Gomez, João M P Q Delgado, Felipe S Lima, Railson M N Alves, André L D Bezerra, Antonio G B Lima","doi":"10.3390/mi15101186","DOIUrl":"https://doi.org/10.3390/mi15101186","url":null,"abstract":"<p><p>The current article elucidates a study centered on the development of an anemometer leveraging an inertial sensor for wind speed measurement in the northeast region of Brazil, focusing on renewable energy generation. The study encompassed a series of experiments aimed at calibrating the anemometer, analyzing the noise generated by the inertial sensor, and scrutinizing the data acquired during wind speed measurement. The calibration process unfolded in three stages: initial noise analysis, subsequent inertial data analysis, and the derivation of calibration curves. The first two stages involved experiments conducted at an average sampling rate of 10 Hz. Simultaneously, the third stage incorporated data collected over a 1 h duration while maintaining the same sampling rate. The outcomes underscore the suitability of the anemometer based on an inertial sensor for wind energy systems and diverse applications. While the wind readings from the prototype exhibit considerable fluctuations, a three-length moving average filter is applied to the prototype's output to mitigate these fluctuations. The calibration surface was established using observational data, and the resultant surface is detailed. Data analysis assumes paramount significance in wind speed measurement, and the K-NN algorithm demonstrated superior efficacy in estimating the correspondence between measured and control data.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509312/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solution-Processed CsPbBr<sub>3</sub> Perovskite Photodetectors for Cost-Efficient Underwater Wireless Optical Communication System.","authors":"Jiakang Wei, Yutong Deng, Jianjian Fei, Tian Yang, Pinhao Chen, Lu Zhu, Zhanfeng Huang","doi":"10.3390/mi15101185","DOIUrl":"https://doi.org/10.3390/mi15101185","url":null,"abstract":"<p><p>Underwater wireless optical communication (UWOC) has attracted increasing attention due to its advantages in bandwidth, latency, interference resistance, and security. Photodetectors, as a crucial part of receivers, have been continuously developed with the great progress that has been made in advanced materials. Metal halide perovskites emerging as promising optoelectronic materials in the past decade have been used to fabricate various high-performance photodetectors. In this work, high-performance CsPbBr<sub>3</sub> perovskite PDs were realized via solution process, with low noise, a high responsivity, and a fast response. Based on these perovskite PDs, a cost-efficient UWOC system was successfully demonstrated on an FPGA platform, achieving a data rate of 6.25 Mbps with a low bit error rate of 0.36%. Due to lower background noise under environment illumination, perovskite PDs exhibit better communication stability before reaching a data rate threshold; however, the BER increases rapidly due to the long fall time, resulting in difficulty in distinguishing switching signals. Reducing the fall time of perovskite PDs and using advanced coding techniques can help to further improve the performance of the UWOC system based on perovskite PDs. This work not only demonstrates the potential of perovskite PDs in the application of UWOC, but also improves the development of a cost-effective UWOC system based on FPGAs.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509643/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Seven-State RF MEMS Miniaturized Broadband Reconfigurable Step Attenuator.","authors":"Yuheng Si, Siming Chen, Peifang Fu, Jian Yu, Binyi Ma, Qiannan Wu, Mengwei Li","doi":"10.3390/mi15101182","DOIUrl":"https://doi.org/10.3390/mi15101182","url":null,"abstract":"<p><p>This paper presents a three-channel reconfigurable step attenuator based on radio frequency (RF) microelectromechanical system (MEMS) switches, in response to the current issues of high insertion loss and low attenuation accuracy of attenuators. The coplanar waveguide (CPW), cross-shaped power dividers, RF MEMS switches, and π-type attenuation resistor networks are designed as a basic unit of the attenuator. The attenuator implemented attenuation of 0~30 dB at 5 dB intervals in the frequency range of 1~25 GHz through two basic units. The results show that the insertion loss is less than 1.41 dB, the attenuation accuracy is better than 2.48 dB, and the geometric size is 2.4 mm × 4.0 mm × 0.7 mm. The attenuator can be applied to numerous fields such as radar, satellites, aerospace, electronic communication, and so on.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509362/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MicromachinesPub Date : 2024-09-24DOI: 10.3390/mi15101180
Jonathan Kelley, Joseph W Newkirk, Laura N Bartlett, Sriram Praneeth Isanaka, Todd Sparks, Saeid Alipour, Frank Liou
{"title":"Development of Robust Steel Alloys for Laser-Directed Energy Deposition via Analysis of Mechanical Property Sensitivities.","authors":"Jonathan Kelley, Joseph W Newkirk, Laura N Bartlett, Sriram Praneeth Isanaka, Todd Sparks, Saeid Alipour, Frank Liou","doi":"10.3390/mi15101180","DOIUrl":"https://doi.org/10.3390/mi15101180","url":null,"abstract":"<p><p>To ensure consistent performance of additively manufactured metal parts, it is advantageous to identify alloys that are robust to process variations. This paper investigates the effect of steel alloy composition on mechanical property robustness in laser-directed energy deposition (L-DED). In situ blending of ultra-high-strength low-alloy steel (UHSLA) and pure iron powders produced 10 compositions containing 10-100 wt% UHSLA. Samples were deposited using a novel configuration that enabled rapid collection of hardness data. The Vickers hardness sensitivity of each alloy was evaluated with respect to laser power and interlayer delay time. Yield strength (YS) and ultimate tensile strength (UTS) sensitivities of five select alloys were investigated in a subsequent experiment. Microstructure analysis revealed that cooling rate-driven phase fluctuations between lath martensite and upper bainite were a key factor leading to high hardness sensitivity. By keeping the UHSLA content ≤20% or ≥70%, the microstructure transformed primarily to ferrite or martensite, respectively, which generally corresponded to improved robustness. Above 70% UHSLA, the YS sensitivity remained low while the UTS sensitivity increased. This finding, coupled with the observation of auto-tempered martensite at lower cooling rates, may suggest a strong response of the work hardening capability to auto-tempering at higher alloy contents. This work demonstrates a methodology for incorporating robust design into the development of alloys for additive manufacturing.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509832/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MicromachinesPub Date : 2024-09-24DOI: 10.3390/mi15101183
Peng Wang, Jie Dong, Lifu Wang, Shuhui Qiao
{"title":"Signal Denoising Method Based on EEMD and SSA Processing for MEMS Vector Hydrophones.","authors":"Peng Wang, Jie Dong, Lifu Wang, Shuhui Qiao","doi":"10.3390/mi15101183","DOIUrl":"https://doi.org/10.3390/mi15101183","url":null,"abstract":"<p><p>The vector hydrophone is playing a more and more prominent role in underwater acoustic engineering, and it is a research hotspot in many countries; however, it also has some shortcomings. For the mixed problem involving received signals in micro-electromechanical system (MEMS) vector hydrophones in the presence of a large amount of external environment noise, noise and drift inevitably occur. The distortion phenomenon makes further signal detection and recognition difficult. In this study, a new method for denoising MEMS vector hydrophones by combining ensemble empirical mode decomposition (EEMD) and singular spectrum analysis (SSA) is proposed to improve the utilization of received signals. First, the main frequency of the noise signal is transformed using a Fourier transform. Then, the noise signal is decomposed by EEMD to obtain the intrinsic mode function (IMF) component. The frequency of each IMF component in the center further determines that the IMF component belongs to the noise IMF component, invalid IMF component, or pure IMF component. Then, there are pure IMF reserved components, removing noisy IMF components and invalid IMF components. Finally, the desalinated IMF reconstructs the signal through SSA to obtain the denoised signal, which realizes the denoising processing of the signal, extracting the useful signal and removing the drift. The role of SSA is to effectively separate the trend noise and the periodic vibration noise. Compared to EEMD and SSA separately, the proposed EEMD-SSA algorithm has a better denoising effect and can achieve the removal of drift. Following that, EEMD-SSA is used to process the data measured by Fenhe. The experiment is carried out by the North University of China. The simulation and lake test results show that the proposed EEMD-SSA has certain practical research value.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509306/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
MicromachinesPub Date : 2024-09-24DOI: 10.3390/mi15101178
Jiankai Xu, Lijuan Jiang, Ping Cai, Chun Feng, Hongling Xiao, Xiaoliang Wang
{"title":"Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate.","authors":"Jiankai Xu, Lijuan Jiang, Ping Cai, Chun Feng, Hongling Xiao, Xiaoliang Wang","doi":"10.3390/mi15101178","DOIUrl":"https://doi.org/10.3390/mi15101178","url":null,"abstract":"<p><p>The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509565/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142503726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}