P. Chen, R. Jolly, G. Halac, R. Muller, R. White, A. Andrews, M. E. Motamedi
{"title":"A planar-processed PI-FET accelerometer","authors":"P. Chen, R. Jolly, G. Halac, R. Muller, R. White, A. Andrews, M. E. Motamedi","doi":"10.1109/IEDM.1980.189980","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189980","url":null,"abstract":"Excel lent experimental performance has been observed on in tegra ted acce lerometer s t ruc tures t h a t were fab r i ca t ed us ing capac i t i ve PI-FET t r a n s d u c e r s ( l ) t o d e t e c t s t r a i n s i n m i n i a t u r e c a n t i l e v e r beams. The beams are composite struct u r e s c o n s i s t i n g of s i l i c o n , s i l i c o n d i o x i d e , z i n c oxide, metal and pass iva t ing oxide (F igure 1). They a r e formed by a n i s o t r o p i c a l l y e t c h i n g t h e s i l i con f rom undernea th the l aye red s t ruc tu res using EDP e t c h a n t i n t h e manner desc r ibed by P e t e r s e n , ( Z ) o r e l s e by a combination of backside and f r o n t s i d e e t c h i n g of t he wafe r w i th EDP so lu t i on . The p i e z o e l e c t r i c s t r a i n s e n s i n g l a y e r s are direct ly coupled to deplet ion-type, p-channel MOS t r a n s i s t o r s . Dependent on the fabrication procedures employed, the total beam t h i c k n e s s e s a r e e i t h e r below 5 pm ( f o r t o p s u r f a c e e t c h i n g ) , o r else range to about 50 pm ( for e tch ing f rom both s i d e s of t he wafe r ) . S ix sets of beam wid th l l eng th rat ios have been designed: 701235, 2001225, 2751510, 4101505, 5001570, and 950/1240 pm i n o r d e r t o a c h i e v e s e n s i t i v i t i e s t o a wide range of g values and to de te rmine process ing cons t ra in ts . The a c c e l e r o m e t e r s t r u c t u r e s a r e p a r t i a l l y t e m p e r a ture compensated by t h e a d d i t i o n o f a n u n s t r a i n e d z inc -ox ide capac i to r t o ba l ance ou t t he vo l t age produced by t h e p y r o e l e c t r i c i t y o f t h e ZnO. An i n v e s t i g a t i o n of t e m p e r a t u r e s e n s i t i v i t y i s prese n t l y underway.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125680660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrolyte-insulator-semiconductor field-effect transistor","authors":"C. Fung, P. Cheung, W. Ko","doi":"10.1109/IEDM.1980.189929","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189929","url":null,"abstract":"A model adapting the surface ionization and complexation of the surface hydroxyl groups on the gate insulator surface in conjunction with the IGFET theory is proposed to arrive at the terminal behavior of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) in response to the variation of electrolyte parameters. Experimental results of EISFET employing thermally grown silicon dioxide in simple electrolytes containing Na+, K+and Li+ions titrated in a pH range from 2 to 9 were found to be in good agreement with the theory. The model successfully explains the pH sensitivity as well as the ion interference effect of the EISFET as a pH sensor. From this model, it is concluded that the surface site density, NS, and the separation of surface ionization constants, in terms of ΔpK, are the main controlling factors for the EISFET as a pH sensor. For high sensitivity and good selectivity, large NS and small ΔpK values are required.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124880063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High voltage, high current lateral devices","authors":"H. Vaes, J. Appels","doi":"10.1109/IEDM.1980.189760","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189760","url":null,"abstract":"A magnetron injection gun operating with temperature limited electron emission has been designed for a gyrotron amplifier. A series of computer models of the gun anode region were used to determine selected thermal and structural characteristics. Their effects on electron beam energy, velocity spread, and temperature were evaluate. The Thermal analysis yielded the steady state temperatures of 137 node points. Thermally induced mechanical expansions were found to be 0.20% axially and 0.82% radially. In the three dimensional coordinate sytem utilized, the stress in 373 elements were numerically evaluated. The cathode heater power brought the cathode emitter up to 1068°C in 500 seconds. The cathode cooling due to electron emission was found to increase the steady state heater input power requirement by 11% (for an emitter temperature of 1068°C) from 9 W to 11 W. The electron trajectory analysis included an evaluation of the beam energy, velocity spread, and temperature. The effect of the deformed mechanical shapes on the beam paremeters was determined. A two dimentional computer simulation was used to graphically depict the electron trajectories in the gun anode region.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134518675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki
{"title":"Stress-insensitive diffused resistor network for a high accuracy monolithic D/A converter","authors":"S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki","doi":"10.1109/IEDM.1980.189775","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189775","url":null,"abstract":"The stress-insensitive configuration of a Ladder network for a high accuracy monolithic D/A converter is described. To avoid the piezoresistance effect, a stress-insensitive crystal axis is found from the result of the new stress analysis using simple resistors as a strain-sensitive device, which is shifted by 45° from a conventional axis on a surface of","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129128709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"GaAs FET large signal model and design applications","authors":"Y. Tajima, B. Wrona, K. Mishima","doi":"10.1109/IEDM.1980.189769","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189769","url":null,"abstract":"A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132435787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Planar plasma etching of Mo and MoSi2using NF3","authors":"T. Chow, A. Steckl","doi":"10.1109/IEDM.1980.189776","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189776","url":null,"abstract":"Planar plasma etching of Mo and MoSi<inf>2</inf>using NF<inf>3</inf>gas mixtures is reported for the first time. The etch rates of Mo, MoSi<inf>2</inf>, and SiO<inf>2</inf>were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO<inf>2</inf>and MoSi<inf>2</inf>:SiO<inf>2</inf>was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF<inf>3</inf>to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF<inf>3</inf>etching is shown.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132354536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Subsurface junction field effect transistor (SJFET)","authors":"S. Malhi, C. Salama, W. Donnison, H. D. Barber","doi":"10.1109/IEDM.1980.189956","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189956","url":null,"abstract":"A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO2interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117081455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. M. Black, W. M. Bollen, R. Tobin, R. Parker, L. Barnett, G. Farney
{"title":"A high power magnetron for air breakdown studies","authors":"W. M. Black, W. M. Bollen, R. Tobin, R. Parker, L. Barnett, G. Farney","doi":"10.1109/IEDM.1980.189787","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189787","url":null,"abstract":"A hybrid inverted coaxial magnetron (HICM) is being developed to produce high peak power levels at S band. This paper discusses its experimental performance with a short 40 nsec pulse forming network the results of a preliminary air breakdown study, and modifications to extend to a longer 250 nsec pulse width. In the short pulse mode the magnetron peak power levels are on the order 500 to 800 MW. The frequency of 3.24 GHz has been measured by gating the pulse and using a solid-state dispersive line. The large peak electric fieldE_{p} = 5 times 10^{4}V/cm, which this system generates (without resonant cavities), gives a unique capability to study microwave interaction and energy deposition in air breakdown plasma. The breakdown of air for pressures up to 100 Torr has been observed by monitoring the density of the resulting plasma and its light output. The plasma density at 10 Torr is approximately 100 nc; ncis the critical plasma density where the microwave frequency equals the plasma frequency. The pulse width of the HICM will be extended to 250 nsec with a new pulse forming network which allows the examination of the hydrodynamic breakdown effects. A particularly interesting feature of the magnetron modification for longer pulse operation is the use of a novel high-voltage insulator. A newly developed circular waveguide TEonmode coupler allows axial seperation of two lengths of the eight inch output waveguide inside a larger diameter tube. The result is an effective dc isolation with very efficient r.f. transmission.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116884887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Limiting factors for programming EPROM of reduced dimensions","authors":"M. Wada, S. Mimura, H. Nihira, H. Iizuka","doi":"10.1109/IEDM.1980.189746","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189746","url":null,"abstract":"In order to realize high density EPROM's it is necessary to reduce the dimensions of EPROM cells. In this paper the programming characteristics of the floating gate EPROM's are discussed in relation to the limiting factors for device parameters and the programming conditions. Some problems which arise from the arrayed cell configuration are clarified. The programming speed of an EPROM is remarkably lowered by the voltage drop in a bit line due to an excess current flow through deselected cells which is induced by pulling up of the floating gate potential due to capacitance coupling between the bit line and the floating gate. A punch-through current in memory cells has the same effect on the programming characteristics. The feasibility of higher density EPROM's are also discussed by taking these problems into account.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121545330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improvements in method and apparatus for determining minority carrier diffusion length","authors":"A. Goodman","doi":"10.1109/IEDM.1980.189801","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189801","url":null,"abstract":"The constant-magnitude steady-state surface photovoltage (SPV) method for determining the minority carrier diffusion length L is in principle an excellent technique. It has, however, recevied relatively limited use because of practical difficulties in carrying out the required measurements. This paper describes an improved measurement system that virtually eliminates these difficulties and allows a rapid straightforward determination of L. These measurements in silicon monitor wafers have enabled a routine quality control check on many factory processing steps, particularly those that are carried out at high temperature and have the potential for significantly degrading L.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125524649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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