亚表面结场效应晶体管

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189956

S. Malhi, C. Salama, W. Donnison, H. D. Barber

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引用次数: 2

摘要

本文描述了一种新型的双极兼容结场效应晶体管结构。该装置使用单个高能硼植入物制造，其结果是在n外延背景材料中嵌入p型通道。该通道通过薄n型层从Si/ sio2接口中缓冲，从而提高了器件的再现性。所得到的器件在亚伏特范围内表现出可控的针尖关电压。

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Subsurface junction field effect transistor (SJFET)

A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO2interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.

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1980 International Electron Devices Meeting

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