1980 International Electron Devices Meeting最新文献

Circuitless electron beam amplifier (CEBA) 无电路电子束放大器

1980 International Electron Devices Meeting Pub Date : 1981-03-01 DOI: 10.1109/IEDM.1980.189824

C. De Santis, L. Jasper

引用次数: 1

Transverse modal behavior of transverse junction stripe laser excited by short electrical pulse 短电脉冲激励下横结条纹激光器的横向模态特性

1980 International Electron Devices Meeting Pub Date : 1980-12-01 DOI: 10.1109/IEDM.1980.189839

K. Lau, A. Yariv

引用次数: 0

Thermal and mechanical effects on gyrotron gun anode electrical performance 热和力学对回旋管枪阳极电性能的影响

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189872

M. Caplan, D. Dimas, J. Tancredi, D. Birnbaum

{"title":"Thermal and mechanical effects on gyrotron gun anode electrical performance","authors":"M. Caplan, D. Dimas, J. Tancredi, D. Birnbaum","doi":"10.1109/IEDM.1980.189872","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189872","url":null,"abstract":"A magnetron injection gun operating with temperature limited electron emission has been designed for a gyrotron amplifier. A series of computer models of the gun anode region were used to determine selected thermal and structural characteristics. Their effects on electron beam energy, velocity spread, and temperature were evaluated. The thermal analysis yielded the steady state temperatures of 137 node points, Thermally induced mechanical expansions were found to be 0.20% axially and 0.8296 radially. In the three dimensional coordinate system utilized, the stresses in 373 elements were numerically evaluated, The cathode heater warm-up characteristic was such that a 9 watt input heater power brought the cathode emitter up to 1068°C in 500 seconds. The cathode cooling due to electron emission was found to increase the steady state heater input power requirement by 1196 (for an emitter temperature of 1065°C) from 9 W to 11 W. The electron trajectory analysis included an evaluation of the beam energy, velocity spread, and temperature. The effect of the deformed mechanical shapes on the beam parameters was determined. A two dimensional computer simulation was used to graphically depict the electron trajectories in the gun anode region.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new MOS transistor design with self-registering source-drain and gate contacts 一种具有自定位点源极漏极和栅极触点的新型MOS晶体管设计

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189774

H. Fu, J. Manoliu, J. Moll

引用次数: 2

Advanced processing techniques for GaAs monolithic integrated circuits GaAs单片集成电路的先进加工技术

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189860

M. Siracusa, Z. Lemnios, D. Maki

引用次数: 1

Electrical-optical characteristics of buried waveguide heterostructure InGaAsP injection lasers 埋地波导异质结构InGaAsP注入激光器的电光特性

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189840

R.B. Wilson, R. Nelson, P. Wright

引用次数: 0

Elimination of latch up in bulk CMOS 消除散装CMOS中的锁存器

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189806

R. Payne, W. N. Grant, W. Bertram

引用次数: 40

Planar, ion-implanted GaAs bipolar transistors 平面离子注入砷化镓双极晶体管

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189966

K. Vaidyanathan, R. Jullens, C. Anderson, H. Dunlap

{"title":"Planar, ion-implanted GaAs bipolar transistors","authors":"K. Vaidyanathan, R. Jullens, C. Anderson, H. Dunlap","doi":"10.1109/IEDM.1980.189966","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189966","url":null,"abstract":"The high electron mobilities and wide bandgap of GaAs make it an attractive material for high speed, high temperature device applications. Integrated circuits employing MESFET devices have been fabricated. The speed, packing density, and drive capability advantages associated with bipolar devices make it attractive to investigate the feasibility of fabricating such devices in GaAs. In particular, if both bipolar and MESFET devices can be integrated into a planar IC process, the material properties of GaAs can be more fully exploited. In this paper we discuss the fabrication and properties of ion-implanted, planar bipolar n-p-n transistors in GaAs. The devices were fabricated by implanting the base and emitter regions into n-type epitaxial GaAs which acts as the collector. Using a thin evaporated metal layer as an implant mask, selective base regions were formed by Be-ion implantation. Silicon was then implanted to form the emitter region. The samples were annealed at 850°c for 30 minutes to electrically activate the impurities. A passivating dielectric layer (SixOyNz) was deposited by a plasma enhanced deposition process. Ohmic contacts to the collector and emitter regions were formed with Au/Ge:Ni while Ag:Mn ohmic contacts were made to the base region. Typical devices exhibited breakdown voltages in excess of 40V across the collector-base junctions and common emitter current gains of 8. Gains as high as 16 were observed. These results are extremely encouraging since structures were not designed for optimum performance. The leakage currents and the frequency response of these devices will be discussed.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128978481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Raman spectroscopy for evaluating laser annealed silicon layers 用拉曼光谱评价激光退火硅层

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189803

S. Mukherjee, R.E. Thomas, L. Haley, J. Koningstein, F. Adar

引用次数: 0

Space tube with high efficiency cooling design approach 空间管采用高效冷却的设计方法

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189782

M. K. Scherba

{"title":"Space tube with high efficiency cooling design approach","authors":"M. K. Scherba","doi":"10.1109/IEDM.1980.189782","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189782","url":null,"abstract":"Heat pipes, utilized in a high power space type traveling-wave tube, provide an efficient means of dispersing heat from areas of high concentration. Heat, generated in the region of the collector and output Circuit, is dispersed throughout the entire tube baseplate area by both longitudinal and transverse heat pipes contained in the baseplate. The results are lowered individual component temperatures and reduced thermal densities throughout the baseplate. The objective of this effort was to extend the power level of helix space tubes by combining a high efficiency cooling design approach with high efficiency electrical design techniques previously demonstrated on lower power space devices. These techniques include velocity tapering of the helix circuit, multi-stage depressed electron collection, low dielectric and conductive shield loading, and integral barrel focusing. A novel technique for transferring barrel heat to the baseplate is introduced. The tube delivers 300 watts of continuous wave RF output power at lower E-band frequencies. Saturated gain levels of 40 dB are obtained at an overall efficiency of 52%. The tube has been designed for conservative cathode loading and exhibits low operating temperature.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130498964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0