1980 International Electron Devices Meeting最新文献_第10页

Hybrid focal plane arrays for infrared imaging devices 用于红外成像装置的混合焦平面阵列

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189830

B. Munier, J. Reboul, J. Portmann

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引用次数: 1

Transverse magnetoresistance in GaAs two terminal submicron devices: A characterization of electron transport in the near ballistic regime GaAs双端亚微米器件的横向磁阻:近弹道状态下电子输运的表征

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189910

M. Hollis, N. Dandekar, L. Eastman, M. Shur, D. Woodard, R. Stall, C. Wood

引用次数: 4

Velocity overshoot investigations in sub-micron GaAs devices by photoconduction experiments 利用光导实验研究亚微米砷化镓器件的速度超调

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189911

S. Laval, C. Bru, C. Arnodo, R. Castagné

引用次数: 2

InP millimeter wave Schottky barrier mixer diodes for low local oscillator power requirements 用于低本地振荡器功率要求的毫米波肖特基势垒混频器二极管

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189863

A. Christou, W. Anderson, M. L. Bark

{"title":"InP millimeter wave Schottky barrier mixer diodes for low local oscillator power requirements","authors":"A. Christou, W. Anderson, M. L. Bark","doi":"10.1109/IEDM.1980.189863","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189863","url":null,"abstract":"A number of system applications at millimeter wavelengths have low local oscillator (LO) power requirements in addition to good noise performance. For instance, the replacement of Klystrons by a combination of solid state sources plus frequency multipliers at millimeter wavelengths has a strict LO power requirement. The barrier height φBis the important diode parameter in that it determines the local oscillator power required to bias the Schottky diode into its non-linear region. Schottky barriers to InP exhibit a low barrier due to the fact that the Fermi level is not pinned in the center of the energy gap. However, the development of reliable Schottky barriers to InP has been hampered by the large leakage current Schottky barriers to InP have exhibited. In the present paper, we report on a low barrier height, low leakage current Schottky barrier to InP. The InP Schottky barrier diodes fabricated have exhibited low noise figure at 36 and 94 GHz and require exceptionally low local oscillator power. The metallization scheme consisted of TiW sputtered at 200 W rf power. These diodes were processed with a 5 µm diameter active area on n-n+InP layers. At 36 GHz a noise figure of 6.5-7.0 dB resulted at LO power of .5 mW. At 94 GHz the noise figure of 8.0 dB required a LO power of only 0.75 mW.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116672332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Recent developments in thermophotovoltaic conversion 热光伏转换的最新进展

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189789

R. Swanson

引用次数: 26

A high power millimeter wave TWT amplifier 高功率毫米波行波管放大器

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189781

B. James, D. Schenk

{"title":"A high power millimeter wave TWT amplifier","authors":"B. James, D. Schenk","doi":"10.1109/IEDM.1980.189781","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189781","url":null,"abstract":"A coupled cavity traveling wave tube operating at 35 gigahertz has been tested to an output power of 30 kilowatts peak and 9 kilowatts average. This high power millimeter wave amplifier is designed specifically for a coherent millimeter wave radar which is being designed and constructed by Massachusetts Institute of Technology, Lincoln Laboratory, under the sponsorship of the US Army Ballistic Missile Defense Advanced Technology Center. The amplifier was operated at beam voltage of 46.5 kilovolts with a beam current of 4.0 amperes. The tube requirements were 30 kilowatts peak, 3 kilowatts average over 1000 megahertz, 1 dB bandwidth, at a center frequency of 35 gigahertz with 50 dB saturated gain. These requirements were achieved during the development program with 17 percent interaction efficiency. The paper will describe the design concepts used in the development of this milimeter wave TWT amplifier. Design of the electron beam system, which is considered the highest power density electron beam generated to date, and the unique coupled cavity circuit design will be discussed in some detail. Test data for both the beam system and r.f. circuit will be presented. The r.f. performance characteristics of the tube will also be discussed and measured data presented.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123812204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication and performance of InP MISFET InP MISFET的制造与性能

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189862

T. Kawakami, M. Okamura

引用次数: 4

A new dynamic RAM cell for VLSI memories 一种新的用于VLSI存储器的动态RAM单元

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189900

K. Terada, M. Takada, S. Kurosawa, S. Suzuki

引用次数: 10

Electrically alterable read-only memory cell with graded energy band-gap insulator 具有梯度能量带隙绝缘体的可电变只读存储单元

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189902

S. Hijiya, T. Ito, T. Nakamura, N. Toyokura, H. Ishikawa

引用次数: 4

A 50 ns/15 V alterable n-channel nonvolatile memory device 50ns / 15v可变n通道非易失性存储器器件

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189903

M. Horiuchi, H. Katto

引用次数: 0