{"title":"利用光导实验研究亚微米砷化镓器件的速度超调","authors":"S. Laval, C. Bru, C. Arnodo, R. Castagné","doi":"10.1109/IEDM.1980.189911","DOIUrl":null,"url":null,"abstract":"Direct evidence for electron velocity overshoot is obtained in Ga As sub-micron devices at room temperature. Photoconduction current variations as a function of electric field are compared for various device lengths and several incident light wavelengths.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"182 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Velocity overshoot investigations in sub-micron GaAs devices by photoconduction experiments\",\"authors\":\"S. Laval, C. Bru, C. Arnodo, R. Castagné\",\"doi\":\"10.1109/IEDM.1980.189911\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Direct evidence for electron velocity overshoot is obtained in Ga As sub-micron devices at room temperature. Photoconduction current variations as a function of electric field are compared for various device lengths and several incident light wavelengths.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"182 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189911\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189911","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Velocity overshoot investigations in sub-micron GaAs devices by photoconduction experiments
Direct evidence for electron velocity overshoot is obtained in Ga As sub-micron devices at room temperature. Photoconduction current variations as a function of electric field are compared for various device lengths and several incident light wavelengths.
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