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Scaling properties of bipolar devices 双极器件的缩放特性
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189753
T. Ning, D. Tang, P. Solomon
{"title":"Scaling properties of bipolar devices","authors":"T. Ning, D. Tang, P. Solomon","doi":"10.1109/IEDM.1980.189753","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189753","url":null,"abstract":"The procedures for optimizing the vertical doping profile of bipolar transistors and for scaling bipolar switching circuits are discussed. A bipolar circuit remains optimized for power-delay operation in scaling if the relative contributions to the circuit delay of every capacitance and resistance component of the circuit are kept constant. This condition is realized only by coordinated reductions of both the vertical doping profiles and the horizontal dimensions and appropiately varying the current. As the base width is reduced in scaling, the emitter depth must be reduced proportionately to maintain base width control and reproducibility, and the base doping must be increased to avoid punch through. For emitters less than 200nm deep, the current gain is no longer determined by the base sheet resistance alone, but depends strongly on the emitter contact technology. Also, for base doping greater than about 5×1017cm-3, the effects of heavy doping in the base region as well as in the emitter region become important in determining the device characteristics.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130516408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Monolithic integration of widegap GaAlAs/GaAs phototransistors and LEDs as amplifying wavelength converters and photothyristors 宽间隙砷化镓/砷化镓光电晶体管和led的单片集成，作为放大波长变换器和光晶闸管
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189974
H. Beneking, N. Grote, M. Svilans
{"title":"Monolithic integration of widegap GaAlAs/GaAs phototransistors and LEDs as amplifying wavelength converters and photothyristors","authors":"H. Beneking, N. Grote, M. Svilans","doi":"10.1109/IEDM.1980.189974","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189974","url":null,"abstract":"","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121561752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A study of thermionic emitters in the regime of practical operation 热离子发射体在实际操作中的研究
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189868
R. Longo
{"title":"A study of thermionic emitters in the regime of practical operation","authors":"R. Longo","doi":"10.1109/IEDM.1980.189868","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189868","url":null,"abstract":"In many important applications of thermionic emitters, such as TWT's, the operating point of the device is chosen to be in the space charge limited region, In practice this point is usually not too far from where the device transitions to saturated emission. A detailed analysis of the current density-Voltage-Temperature (J-V-T) relationship in many devices in this region of operation shows large discrepancies with currently accepted emission theories, These discrepancies make the (J-V-T) characteristics unusable as a means of studying emitters in their real operating environment, An earlier reported (IEDM 1978) empirical relationship for the current density-Voltage-Temperature will be shown to be an accurate representation of experimental data, in all device geometries tested. A summary of some of the experiments will be discussed and compared to both Langmuir's emission theory and the empirical discovered relationship, Finally, some fundamental physics will be discussed that is felt will support the existence of the cited empirical relationship.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121708644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Effects of design and process variations on silicon concentrator solar cell performance 设计和工艺变化对硅聚光器太阳能电池性能的影响
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189790
H. T. Weaver, R. D. Nasby, C. M. Garner
{"title":"Effects of design and process variations on silicon concentrator solar cell performance","authors":"H. T. Weaver, R. D. Nasby, C. M. Garner","doi":"10.1109/IEDM.1980.189790","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189790","url":null,"abstract":"Data from several high efficiency silicon solar cell types are analyzed using models for the device that include high doping effects. By comparing calculations derived from various modeling assumptions, processing problems may often be isolated from actual design features. The evolution of a cell design is traced, experimentally and theoretically, to present cells which exhibit 20 percent energy conversion efficiencies at concentration.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124343981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Small width effects on MOSFET hot-electron reliability 小宽度对MOSFET热电子可靠性的影响
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189943
V. Srinivasan, J. Barnes
{"title":"Small width effects on MOSFET hot-electron reliability","authors":"V. Srinivasan, J. Barnes","doi":"10.1109/IEDM.1980.189943","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189943","url":null,"abstract":"Short channel MOSFETs of the same channel length show a width-dependent hot electron degradation (threshold voltage shift (VT) and/or drain conductance (gD)) degradation) Devices with small widths (2-3 µm) show a VTshift, while devices with larger widths show only an gDdegradation. A detailed study of hot electron injection and trapping in MOSFETs for extended periods of time shows that the threshold voltage is the dominant reason for the observed reduction in device current. The localized nature of hot electron emission and subsequent trapping in the oxide when the device is under electrical stress is shown. Based on this effect, a simple physical model is presented to explain the differences in the behavior of wide and narrow channel devices of similar effective channel lengths under stress. The experimental results obtained during the hot electron reliability study are presented and explained on the basis of the above model.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121746902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A FET-controlled thyristor in SIPMOS technology simmos技术中的场效应晶体管控制晶闸管
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189758
L. Leipold, W. Baumgartner, W. Ladenhauf, J. Stengl
{"title":"A FET-controlled thyristor in SIPMOS technology","authors":"L. Leipold, W. Baumgartner, W. Ladenhauf, J. Stengl","doi":"10.1109/IEDM.1980.189758","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189758","url":null,"abstract":"The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices. This technology which has process steps like those of conventional integrated MOS circuits was used to realize a FET-controlled thyristor. The SIPMOS thyristor shows excellent qualities with regard to on-state current (di/dt=4000 A/us) voltage immunity (dV/dt > 1200 V/us), and firing sensitivity.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131917203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Evaporated AgBr as an x-ray sensitive layer in a two-layer resist system for x-ray lithography 蒸发AgBr作为x射线光刻双层抗蚀剂系统中的x射线敏感层
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189855
J. Lavine, J. Masters, A. Das
{"title":"Evaporated AgBr as an x-ray sensitive layer in a two-layer resist system for x-ray lithography","authors":"J. Lavine, J. Masters, A. Das","doi":"10.1109/IEDM.1980.189855","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189855","url":null,"abstract":"Exposure of 2000 Å films of evaporated AgBr to 7 Å x-rays produced developable Ag images with 5 µJ/cm2of x-ray energy. The optical density of developed AgBr films vs. x-ray intensity produced a log-linear dependence in the range of 10 to 5000µJ/cm2with a gamma of 0.18. The extraordinary x-ray speed of evaporated AgBr stems both from photographic development, which multiplies the Ag latent image by a factor of ∼105, and by virtue of the relatively heavy atoms which provide a calculated mass absorption coefficient of 32% from a 2000 å film. We have also exposed a special two-layer resist system consisting of AgBr/polymer on Si through an x-ray mask consisting of Ti membrane with Au as the opaque material. In previous work (1), we have shown that the photographically generated Ag image provides a very good mask for plasma etching polymer.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134027290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A photovoltaic flux detector for the solar tower test facility 用于太阳能塔测试设施的光伏通量检测器
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189791
C. M. Garner
{"title":"A photovoltaic flux detector for the solar tower test facility","authors":"C. M. Garner","doi":"10.1109/IEDM.1980.189791","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189791","url":null,"abstract":"Two photovoltaic flux detectors for the solar tower test facility have been designed and fabricated to operate at concentrations up to 4000 suns. One of the detectors (type 1) has a high spectral response between 400 and 950 nm, while the other (type 2) has a spectral response which peaks at 475 nm and is low at longer wavelengths. The type 1 detector was fabricated on .2-.4 -cm n-type F2 silicon using conventional solar cell processing developed at Sandia National Laboratories. The type 2 detector is produced by exposing the type 1 detector to 1014neutrons/ cm2. The detector's spectral response, behavior with concentrated sunlight, and temperature dependance of the short current have been measured.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134452666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A high power gyrotron operating in a high order mode 在高阶模式下工作的高功率回旋管
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189821
B. Arfin, M. Read
{"title":"A high power gyrotron operating in a high order mode","authors":"B. Arfin, M. Read","doi":"10.1109/IEDM.1980.189821","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189821","url":null,"abstract":"This paper will describe the design of a 35 GHz gyrotron oscillator having objectives of 350-500 kW output power with an efficiency of approximately 50%. Test results will also be presented.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127567081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new complementary transistor structure for analog integrated circuits 用于模拟集成电路的新型互补晶体管结构
1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189754
T. Kikkawa, T. Suganuma, K. Tanaka, T. Hara
{"title":"A new complementary transistor structure for analog integrated circuits","authors":"T. Kikkawa, T. Suganuma, K. Tanaka, T. Hara","doi":"10.1109/IEDM.1980.189754","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189754","url":null,"abstract":"A new complementary transistor structure has been developed. This paper presents a new technique which provides a fully complementary transistor structure for analog integrated circuits. The pnp transistor is fabricated by triple diffusion process in n type epitaxial layer on p type substrate, and is isolated from the substrate by inserting n- ion implanted layer between p+ collector buried layer and the substrate. This technique results in 5 to 10 times improvement in gain bandwidth product fT, maximum collector current IC(max)and collector saturation voltage VCE(sat)in comparison with conventional pnp transistors. Consequently, a fully complementary pnp transistor to npn transistors can be obtained.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"07 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129408691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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