simmos技术中的场效应晶体管控制晶闸管

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189758

L. Leipold, W. Baumgartner, W. Ladenhauf, J. Stengl

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引用次数: 21

摘要

SIPMOS(西门子功率MOS)技术是为功率mosfet和交流功率开关开发的，其中MOS技术与双极器件在功能上相结合。采用与传统集成MOS电路相同的工艺步骤，实现了场效应管控制晶闸管。SIPMOS晶闸管具有良好的导通电流(di/dt=4000 A/us)抗压性(dV/dt > 1200 V/us)和烧成灵敏度。

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A FET-controlled thyristor in SIPMOS technology

The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices. This technology which has process steps like those of conventional integrated MOS circuits was used to realize a FET-controlled thyristor. The SIPMOS thyristor shows excellent qualities with regard to on-state current (di/dt=4000 A/us) voltage immunity (dV/dt > 1200 V/us), and firing sensitivity.

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来源期刊

1980 International Electron Devices Meeting

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