{"title":"设计和工艺变化对硅聚光器太阳能电池性能的影响","authors":"H. T. Weaver, R. D. Nasby, C. M. Garner","doi":"10.1109/IEDM.1980.189790","DOIUrl":null,"url":null,"abstract":"Data from several high efficiency silicon solar cell types are analyzed using models for the device that include high doping effects. By comparing calculations derived from various modeling assumptions, processing problems may often be isolated from actual design features. The evolution of a cell design is traced, experimentally and theoretically, to present cells which exhibit 20 percent energy conversion efficiencies at concentration.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effects of design and process variations on silicon concentrator solar cell performance\",\"authors\":\"H. T. Weaver, R. D. Nasby, C. M. Garner\",\"doi\":\"10.1109/IEDM.1980.189790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Data from several high efficiency silicon solar cell types are analyzed using models for the device that include high doping effects. By comparing calculations derived from various modeling assumptions, processing problems may often be isolated from actual design features. The evolution of a cell design is traced, experimentally and theoretically, to present cells which exhibit 20 percent energy conversion efficiencies at concentration.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of design and process variations on silicon concentrator solar cell performance
Data from several high efficiency silicon solar cell types are analyzed using models for the device that include high doping effects. By comparing calculations derived from various modeling assumptions, processing problems may often be isolated from actual design features. The evolution of a cell design is traced, experimentally and theoretically, to present cells which exhibit 20 percent energy conversion efficiencies at concentration.
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