A FET-controlled thyristor in SIPMOS technology

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189758

L. Leipold, W. Baumgartner, W. Ladenhauf, J. Stengl

引用次数: 21

Abstract

The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices. This technology which has process steps like those of conventional integrated MOS circuits was used to realize a FET-controlled thyristor. The SIPMOS thyristor shows excellent qualities with regard to on-state current (di/dt=4000 A/us) voltage immunity (dV/dt > 1200 V/us), and firing sensitivity.

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simmos技术中的场效应晶体管控制晶闸管

SIPMOS(西门子功率MOS)技术是为功率mosfet和交流功率开关开发的，其中MOS技术与双极器件在功能上相结合。采用与传统集成MOS电路相同的工艺步骤，实现了场效应管控制晶闸管。SIPMOS晶闸管具有良好的导通电流(di/dt=4000 A/us)抗压性(dV/dt > 1200 V/us)和烧成灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1980 International Electron Devices Meeting

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