1980 International Electron Devices Meeting最新文献_第6页

High power subnanosecond switch 大功率亚纳秒开关

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189921

I. Grekhov, A. Kardo-Sysoev, L. S. Kostina, S. Shenderey

引用次数: 17

The evolution from components to integrated optoelectronics circuits 从元件到集成光电电路的演变

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189923

L. Tomasetta

引用次数: 0

Stress-insensitive diffused resistor network for a high accuracy monolithic D/A converter 高精度单片D/ a转换器的应力不敏感扩散电阻网络

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189775

S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki

引用次数: 10

Planar plasma etching of Mo and MoSi2using NF3 用NF3平面等离子体刻蚀Mo和mosi2

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189776

T. Chow, A. Steckl

引用次数: 5

Multimode injected-beam crossed-field amplifier for coherent airborne radar 相干机载雷达多模注入波束交叉场放大器

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189785

G. Groshart, R. Moats

引用次数: 0

A high power magnetron for air breakdown studies 用于空气击穿研究的高功率磁控管

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189787

W. M. Black, W. M. Bollen, R. Tobin, R. Parker, L. Barnett, G. Farney

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引用次数: 3

GaAs FET large signal model and design applications GaAs场效应管大信号模型及设计应用

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189769

Y. Tajima, B. Wrona, K. Mishima

引用次数: 1

Laser-recrystallized silicon-on-oxide—The ideal silicon-on-insulator structure for VLSI? 激光再结晶氧化硅—超大规模集成电路理想的绝缘体上硅结构?

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189892

H. Lam

引用次数: 1

A new model for the second breakdown of bipolar transistors 双极晶体管二次击穿的新模型

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189817

M. Latif, P. R. Bryant

引用次数: 1

High voltage, high current lateral devices 高电压、大电流横向器件

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1980.189760

H. Vaes, J. Appels

引用次数: 31