Laser-recrystallized silicon-on-oxide—The ideal silicon-on-insulator structure for VLSI?

Abstract

Recent work in laser recrystallization of deposited polysilicon on a 1 µm thick oxide layer grown on a silicon wafer has enhanced the hope of achieving a silicon-on-insulator (SOI) material system that is far superior than that of silicon-on-sapphire (SOS) and is suitable for VLSI application. Surface mobility measured in devices fabricated in the laser-recrystallized SOI material approaches that fabricated in bulk silicon. The bottom silicon and silicon dioxide interface had been shown to be device-worthy. Being a technology based on silicon, low cost and high yield can be expected. This paper summarizes the development of the laser-recrystallized SOI technology to date and what it takes to make this technology commercially viable.