双极晶体管二次击穿的新模型

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189817

M. Latif, P. R. Bryant

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引用次数: 1

摘要

提出了一种二次击穿触发机制，该机制仅依赖于在一定偏置条件下存在多个平衡点。利用一个简单的一维模型，我们可以预测二次击穿所限制的部分安全作业区域边界。我们发现我们的计算结果与各种实验测量结果相吻合。

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A new model for the second breakdown of bipolar transistors

A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.

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来源期刊

1980 International Electron Devices Meeting

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