{"title":"Planar plasma etching of Mo and MoSi2using NF3","authors":"T. Chow, A. Steckl","doi":"10.1109/IEDM.1980.189776","DOIUrl":null,"url":null,"abstract":"Planar plasma etching of Mo and MoSi<inf>2</inf>using NF<inf>3</inf>gas mixtures is reported for the first time. The etch rates of Mo, MoSi<inf>2</inf>, and SiO<inf>2</inf>were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO<inf>2</inf>and MoSi<inf>2</inf>:SiO<inf>2</inf>was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF<inf>3</inf>to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF<inf>3</inf>etching is shown.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Planar plasma etching of Mo and MoSi2using NF3gas mixtures is reported for the first time. The etch rates of Mo, MoSi2, and SiO2were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO2and MoSi2:SiO2was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF3to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF3etching is shown.
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