GaAs FET large signal model and design applications

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189769

Y. Tajima, B. Wrona, K. Mishima

引用次数: 1

Abstract

A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.

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GaAs场效应管大信号模型及设计应用

基于器件的直流特性，推导了大信号GaAs场效应管模型。以一种便于电路设计的形式给出了模型中非线性元件的解析表达式。从理论上和实验上研究了砷化镓场效应管的功率饱和和增益特性。最后给出了采用大信号模型的振荡器设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1980 International Electron Devices Meeting

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