S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki
{"title":"高精度单片D/ a转换器的应力不敏感扩散电阻网络","authors":"S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki","doi":"10.1109/IEDM.1980.189775","DOIUrl":null,"url":null,"abstract":"The stress-insensitive configuration of a Ladder network for a high accuracy monolithic D/A converter is described. To avoid the piezoresistance effect, a stress-insensitive crystal axis is found from the result of the new stress analysis using simple resistors as a strain-sensitive device, which is shifted by 45° from a conventional axis on a surface of","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Stress-insensitive diffused resistor network for a high accuracy monolithic D/A converter\",\"authors\":\"S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki\",\"doi\":\"10.1109/IEDM.1980.189775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The stress-insensitive configuration of a Ladder network for a high accuracy monolithic D/A converter is described. To avoid the piezoresistance effect, a stress-insensitive crystal axis is found from the result of the new stress analysis using simple resistors as a strain-sensitive device, which is shifted by 45° from a conventional axis on a surface of\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stress-insensitive diffused resistor network for a high accuracy monolithic D/A converter
The stress-insensitive configuration of a Ladder network for a high accuracy monolithic D/A converter is described. To avoid the piezoresistance effect, a stress-insensitive crystal axis is found from the result of the new stress analysis using simple resistors as a strain-sensitive device, which is shifted by 45° from a conventional axis on a surface of