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Optical gain in GaInNAs/GaAs multi-quantum well structures GaInNAs/GaAs多量子阱结构中的光增益
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088500
J. Kvietkova, M. Hetterich, D. S. de Jauregui, A. Egorov, H. Riechert
{"title":"Optical gain in GaInNAs/GaAs multi-quantum well structures","authors":"J. Kvietkova, M. Hetterich, D. S. de Jauregui, A. Egorov, H. Riechert","doi":"10.1109/ASDAM.2002.1088500","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088500","url":null,"abstract":"We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm/sup -1/.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115282231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave GaAs Schottky diode 微波GaAs肖特基二极管
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088490
P. Machac, V. Jenícek, J. Pangrác, K. Hoffmann
{"title":"Microwave GaAs Schottky diode","authors":"P. Machac, V. Jenícek, J. Pangrác, K. Hoffmann","doi":"10.1109/ASDAM.2002.1088490","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088490","url":null,"abstract":"This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated. We reached the value of cut-off frequency 13 GHz; this is in discrepancy with the theoretically predicted parameters. This contribution points to the weakness of the suggested theory and describes the technological improvements, which should lead to increased limiting frequency.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127783050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Manufacturing of pixel detectors at Tesla SEZAM 在特斯拉SEZAM生产像素探测器
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088543
M. Frys, S. Kapsia, Z. Spetik, T. Sezam, R.P. Radhostem, V. Jurka, V. Vrba
{"title":"Manufacturing of pixel detectors at Tesla SEZAM","authors":"M. Frys, S. Kapsia, Z. Spetik, T. Sezam, R.P. Radhostem, V. Jurka, V. Vrba","doi":"10.1109/ASDAM.2002.1088543","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088543","url":null,"abstract":"Tesla SEZAM is one of the producers of pixel detectors for the ATLAS experiment at CERN. In the present paper specific design features of sensors and basic processing steps for the manufacturing of sensor structures are described. Electrical characteristics illustrating the quality of produced sensors are presented.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125078948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diamond and cubic boron nitride: synthesis and electronic applications 金刚石和立方氮化硼:合成和电子应用
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088463
I. Bello, W.J. Zhang, K. Chan, C. Chan, Y. Wu, F. Meng, C. Lam, J. Liu, W. Y. Luk
{"title":"Diamond and cubic boron nitride: synthesis and electronic applications","authors":"I. Bello, W.J. Zhang, K. Chan, C. Chan, Y. Wu, F. Meng, C. Lam, J. Liu, W. Y. Luk","doi":"10.1109/ASDAM.2002.1088463","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088463","url":null,"abstract":"This paper reviews recent progress in the deposition of diamond and cubic boron nitride (cBN) films. It aims at the effort of preparing smooth surfaces, improving crystallinity and enhancing adhesion of diamond and cBN films. The properties of these materials, multi-stage growth processes and difference in synthesis of diamond and cBN films are discussed. Resolving the nucleation and growth stages, deposition at different temperatures, post deposition treatment, possible chemistry, and the mechanisms behind are introduced as well. We report the most striking results achieved in our laboratories including the deposition of thin smooth oriented diamond film with coalescent diamond crystals and the deposition of thick cubic boron nitride films yielding well-resolved Raman spectra. The difference between the syntheses of polycrystalline and nano-crystalline diamond films are shown to be in gas phase environments. While the CH/sub 3/ radicals are responsible for the growth of polycrystalline films the CVD environment with abundant C/sub 2/ dimers results in the deposition of nanocrystalline diamond. Special attention deserves manufacturing single crystal diamond nanotips and their arrays. These single crystal diamond nano-lips have a very high aspect ratio, an apical angle of 28/spl deg/ and a radius of 5 nm. Finally, we present a review of potential and current applications of diamond in electronic areas.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125683136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application 基于AlGaN/GaN HEMT层结构的MSM二极管用于变容二极管和光电二极管
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088528
M. Marso, J. Bernát, A. Wolter, P. Javorka, A. Fox, P. Kordos
{"title":"MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application","authors":"M. Marso, J. Bernát, A. Wolter, P. Javorka, A. Fox, P. Kordos","doi":"10.1109/ASDAM.2002.1088528","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088528","url":null,"abstract":"The electrical and optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. The C/sub MAX//C/sub MIN/ ratio can be tuned by electrode geometry in contrast to conventional varactor diode concepts. Capacitance ratios up to 100 have been reached that exceed best values for published heterostructure varactor diodes. RF optimized devices with 0.5 /spl mu/m electrode length exhibit cut-off frequencies up to 86 GHz. Optoelectronic measurements show the potential of the device as MSM photodetector.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133219768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Interactions between phases and thermal stability of TiB/sub x/(ZrB/sub x/)-n-SiC 6H contacts TiB/sub x/(ZrB/sub x/)-n-SiC 6H触点的相间相互作用及热稳定性
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088484
N. S. Boltovets, V. N. Ivanov, S. K. Abdizhaliev, R. Konakova, Y. Kudrik, P. Lytvyn, O. Lytvyn, V. V. Milenin, O. E. Rengevych, E. F. Venger, S. Vlaskina
{"title":"Interactions between phases and thermal stability of TiB/sub x/(ZrB/sub x/)-n-SiC 6H contacts","authors":"N. S. Boltovets, V. N. Ivanov, S. K. Abdizhaliev, R. Konakova, Y. Kudrik, P. Lytvyn, O. Lytvyn, V. V. Milenin, O. E. Rengevych, E. F. Venger, S. Vlaskina","doi":"10.1109/ASDAM.2002.1088484","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088484","url":null,"abstract":"We present the results of our investigations of morphological and electrical characteristics of TiB/sub x/(ZrB/sub x/)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000/spl deg/C for 90 s. The TiB/sub x/ (ZrB/sub x/) films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that RTA changed neither the contact layered structure nor the abrupt shape of the interface, and the contact barrier properties were retained.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116503214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin films for electrochemical sensoric interfaces 电化学传感界面用薄膜
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088533
A. Jakubec, V. Rehacek, I. Novotný, R. Ivanic, V. Tvarozek, C. Knedlik, V. Breternitz, L. Spieß
{"title":"Thin films for electrochemical sensoric interfaces","authors":"A. Jakubec, V. Rehacek, I. Novotný, R. Ivanic, V. Tvarozek, C. Knedlik, V. Breternitz, L. Spieß","doi":"10.1109/ASDAM.2002.1088533","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088533","url":null,"abstract":"Planar microelectrochemical chips with thin-film electrodes (Au, Pt, Ag/AgCl) of different shapes and arrangements (compact, interdigitated array) on Si or glass substrates have been developed and fabricated Analyses of thin film roughness and surface morphology, by AFM and cyclic voltammetry have been performed. Resulting from this we found an optimal cleaning procedure of microelectrodes. The control and analysis of biosensing interfaces play a significant role in the design of biosensors and in optimization of their properties.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133465101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
RF power transistor design in standard digital CMOS technology 标准数字CMOS技术下射频功率晶体管的设计
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088517
M. Tomáška, M. Krnac, R. Vazny
{"title":"RF power transistor design in standard digital CMOS technology","authors":"M. Tomáška, M. Krnac, R. Vazny","doi":"10.1109/ASDAM.2002.1088517","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088517","url":null,"abstract":"RF power transistor design in standard CMOS technology for the power amplifier in the frequency region of 1800MHz is key issue in this work. Transistor application in standard RF power amplifier topology is discussed in the sense of output power as well as power added efficiency. The RF CMOS power transistor layout is designed in Cadence Virtuoso layout editor using AustriaMicroSystems 0.35/spl mu/ CMOS technology. The RF power achieved at 50 Ohm load using designed transistor in class E power amplifier was 1 W at 1750 MHz with power added efficiency of 59.2% at 2.3V power supply voltage.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121769514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel ratio conductance electrochemical sensor based on thin film asymmetric microelectrodes 基于薄膜非对称微电极的新型比电导电化学传感器
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088534
E. Vavrinsky, V. Tvarozek, I. Novotný, Z. Řezníček, D. Nikolelis
{"title":"Novel ratio conductance electrochemical sensor based on thin film asymmetric microelectrodes","authors":"E. Vavrinsky, V. Tvarozek, I. Novotný, Z. Řezníček, D. Nikolelis","doi":"10.1109/ASDAM.2002.1088534","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088534","url":null,"abstract":"A novel asymmetric ratio resistance method has been developed to overcome the technological residual defects and imperfections. Accurate and reproducible monitoring of small differences of temperatures and concentrations is also important in biochemical sensors, e.g. calorimetric or electrochemical sensors. We have applied that new principle in the electrochemical conductometry method.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121992285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of strain gauge structure 应变片结构设计
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI: 10.1109/ASDAM.2002.1088479
A. Husak, P. Kulha, J. Jakovenko, Z. Výborný
{"title":"Design of strain gauge structure","authors":"A. Husak, P. Kulha, J. Jakovenko, Z. Výborný","doi":"10.1109/ASDAM.2002.1088479","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088479","url":null,"abstract":"The paper describes the design of a strain gauge on a cantilever with implanted layers. In the paper, the physical model of implanted strain gauges is characterized and basic technological steps are described. Simulation using CoventorWare (MEMCAD) program is used to verify the mechanical properties and temperature distribution in cantilever structures. A suitable electric bridge connection of the structure for evaluation of electric parameters of strain gauges at mechanic deformation and different temperatures has been designed. On realized structures, basic parameters have been measured such as the dependence of electric parameters of strain gauges on mechanical deformation, temperature dependence at different mechanical load, temperature stability of output parameters, and temperature dependence of pn junctions in the structure. From the measured data, piezoresistive coefficients of deformation sensitivity, linearity, hysteresis, temperature coefficients of resistance, etc. have been calculated. The measured characteristics show very good linearity, small hysteresis and very good sensitivity.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126181573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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