TiB/sub x/(ZrB/sub x/)-n-SiC 6H触点的相间相互作用及热稳定性

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088484

N. S. Boltovets, V. N. Ivanov, S. K. Abdizhaliev, R. Konakova, Y. Kudrik, P. Lytvyn, O. Lytvyn, V. V. Milenin, O. E. Rengevych, E. F. Venger, S. Vlaskina

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引用次数: 0

摘要

我们介绍了我们对TiB/sub x/(ZrB/sub x/)-n-SiC 6H(0001)表面势垒结构的形态和电特性的研究结果。研究了它们在1000/spl℃真空快速热退火(RTA)前后90 s的性能。采用磁控溅射法制备了TiB/sub x/ (ZrB/sub x/)薄膜。结果表明，RTA既没有改变接触层状结构，也没有改变界面的突变形状，并且保持了接触势垒特性。

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Interactions between phases and thermal stability of TiB/sub x/(ZrB/sub x/)-n-SiC 6H contacts

We present the results of our investigations of morphological and electrical characteristics of TiB/sub x/(ZrB/sub x/)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000/spl deg/C for 90 s. The TiB/sub x/ (ZrB/sub x/) films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that RTA changed neither the contact layered structure nor the abrupt shape of the interface, and the contact barrier properties were retained.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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