微波GaAs肖特基二极管

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088490

P. Machac, V. Jenícek, J. Pangrác, K. Hoffmann

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引用次数: 3

摘要

本贡献涉及基于并排技术的特殊GaAs肖特基二极管的技术实现。这是一种结构，其中肖特基接触的一个尺寸是由制造该结构的外延层的厚度给出的。我们达到截止频率13ghz的值;这与理论预测的参数不一致。这一贡献指出了所建议理论的弱点，并描述了技术改进，这将导致限制频率的增加。

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Microwave GaAs Schottky diode

This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated. We reached the value of cut-off frequency 13 GHz; this is in discrepancy with the theoretically predicted parameters. This contribution points to the weakness of the suggested theory and describes the technological improvements, which should lead to increased limiting frequency.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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