Microwave GaAs Schottky diode

Abstract

This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated. We reached the value of cut-off frequency 13 GHz; this is in discrepancy with the theoretically predicted parameters. This contribution points to the weakness of the suggested theory and describes the technological improvements, which should lead to increased limiting frequency.