N. S. Boltovets, V. N. Ivanov, S. K. Abdizhaliev, R. Konakova, Y. Kudrik, P. Lytvyn, O. Lytvyn, V. V. Milenin, O. E. Rengevych, E. F. Venger, S. Vlaskina
{"title":"Interactions between phases and thermal stability of TiB/sub x/(ZrB/sub x/)-n-SiC 6H contacts","authors":"N. S. Boltovets, V. N. Ivanov, S. K. Abdizhaliev, R. Konakova, Y. Kudrik, P. Lytvyn, O. Lytvyn, V. V. Milenin, O. E. Rengevych, E. F. Venger, S. Vlaskina","doi":"10.1109/ASDAM.2002.1088484","DOIUrl":null,"url":null,"abstract":"We present the results of our investigations of morphological and electrical characteristics of TiB/sub x/(ZrB/sub x/)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000/spl deg/C for 90 s. The TiB/sub x/ (ZrB/sub x/) films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that RTA changed neither the contact layered structure nor the abrupt shape of the interface, and the contact barrier properties were retained.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"203 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present the results of our investigations of morphological and electrical characteristics of TiB/sub x/(ZrB/sub x/)-n-SiC 6H (0001) surface-barrier structures. They were studied both before and after rapid thermal annealing (RTA) in vacuum at 1000/spl deg/C for 90 s. The TiB/sub x/ (ZrB/sub x/) films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that RTA changed neither the contact layered structure nor the abrupt shape of the interface, and the contact barrier properties were retained.