GaInNAs/GaAs多量子阱结构中的光增益

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088500

J. Kvietkova, M. Hetterich, D. S. de Jauregui, A. Egorov, H. Riechert

{"title":"GaInNAs/GaAs多量子阱结构中的光增益","authors":"J. Kvietkova, M. Hetterich, D. S. de Jauregui, A. Egorov, H. Riechert","doi":"10.1109/ASDAM.2002.1088500","DOIUrl":null,"url":null,"abstract":"We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm/sup -1/.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical gain in GaInNAs/GaAs multi-quantum well structures\",\"authors\":\"J. Kvietkova, M. Hetterich, D. S. de Jauregui, A. Egorov, H. Riechert\",\"doi\":\"10.1109/ASDAM.2002.1088500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm/sup -1/.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文采用变条纹长度方法对GaInNAs/GaAs多量子阱结构的光学增益进行了实验研究。在不同激发强度和条纹长度下测量了放大后的自发边缘发射。我们观察到随着激发密度的增加，边缘发射强度呈指数增长。获得的光学增益值通常在20 cm/sup -1/数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Optical gain in GaInNAs/GaAs multi-quantum well structures

We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm/sup -1/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

自引率

0.00%

发文量