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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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Single high temperature step selective emitter structures using spin-on dopant sources 使用自旋掺杂源的单高温阶跃选择性发射极结构
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190513
P. Cousins, C. Honsberg, J. Cotter
{"title":"Single high temperature step selective emitter structures using spin-on dopant sources","authors":"P. Cousins, C. Honsberg, J. Cotter","doi":"10.1109/PVSC.2002.1190513","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190513","url":null,"abstract":"The selective emitter provides a solution to the conflicting optical and electrical requirements on the emitter diffusion for a silicon solar cell. The disadvantage of this structure is an increase in the number of high-temperature processes. A new method using spin-on doped and undoped oxides has enabled the selective emitter to be manufactured in one high temperature process. This method provides independent control over the two diffusion strengths via the dopant concentration of the spin-on oxides. A key feature of this method is the out-sourcing from a doped oxide to produce a quality heavy diffusion on a neighbouring device without the use of a sacrificial wafer.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129201929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells 非晶硅基太阳能电池开路电压界面效应的热离子发射模型
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190794
E. Schiff
{"title":"Thermionic emission model for interface effects on the open-circuit voltage of amorphous silicon based solar cells","authors":"E. Schiff","doi":"10.1109/PVSC.2002.1190794","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190794","url":null,"abstract":"We present computer modeling for effects of the p/i interface upon the open-circuit voltage V/sub oc/ in amorphous silicon based pin solar cells. We show that the modeling is consistent with measurements on the intensity-dependence for the interface effect, and we present an interpretation for the modeling based on thermionic emission of electrons over the electrostatic barrier at the p/i interface. We present additional modeling of the relation of V/sub oc/ with the intrinsic layer bandgap E/sub G/. The experimental correlation for optimized cells is V/sub oc/ = (E/sub G//e)-0.79. The correlation is simply explained if V/sub oc/ in these calls is determined by the intrinsic layer, and in particular by the (variable) bandgap and by a non-varying valence bandtail width (about 48 meV) of this layer.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129240119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The influence of the optical band gap of buffer layers at the p/i- and i/n-side on the performance of amorphous silicon germanium solar cells p/i-和i/n侧缓冲层光学带隙对非晶硅锗太阳能电池性能的影响
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190827
D. Lundszien, Yong Feng, F. Finger
{"title":"The influence of the optical band gap of buffer layers at the p/i- and i/n-side on the performance of amorphous silicon germanium solar cells","authors":"D. Lundszien, Yong Feng, F. Finger","doi":"10.1109/PVSC.2002.1190827","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190827","url":null,"abstract":"Profiled amorphous silicon germanium (a-SiGe:H)-buffer layers which are routinely used at the p/i- and i/n-side of a-SiGe:H solar cells, were replaced by simple constant band gap buffers. The optical band gap E/sub G/ of these 9 nm thick buffers was varied over a wide range between 1.3 eV (a-SiGe:H) and 2.0 eV (amorphous silicon carbide, a-SiC:H). The influence of the optical band gap EG of the buffer layer on V/sub oc/ and FF was investigated for both p- and n-side to find an optimum band gap. For a-Si:H as buffer material the optimum buffer thickness was found at 9 nm for both sides. Applying these optimised non profiled buffers in a-Si:H/a-SiGe:H tandem cells, a high stabilized efficiency of 9.4% was obtained with a SiGe layer thickness of only 100 nm.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125528096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced CdTe solar cell performance through surface engineering 通过表面工程提高CdTe太阳能电池性能
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190683
Donghwan Kim, J. Heo, Rowoon Lee, Younggun Han, K. Durose, S. Petrov, K. Nakamura, T. Toyama, H. Okamoto
{"title":"Enhanced CdTe solar cell performance through surface engineering","authors":"Donghwan Kim, J. Heo, Rowoon Lee, Younggun Han, K. Durose, S. Petrov, K. Nakamura, T. Toyama, H. Okamoto","doi":"10.1109/PVSC.2002.1190683","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190683","url":null,"abstract":"Surface of indium-tin oxide (ITO) substrate were irradiated with accelerated Ar/sup +/, N/sub 2//sup +/, O/sub 2//sup +/ and H/sub 2//sup +/ ions (1 keV) at different doses. The change in sheet resistance (R/sub sh/), the water-contact angle (WCA) and the composition of ITO were measured. R/sub sh/ slightly increased with the ion dose. WCA dropped to less than 15/spl deg/ and the composition shifted to oxygen-rich. CdS films grown on ITO by chemical bath deposition showed an improvement in terms of the microstructure, the surface morphology, the optical transmittance, and the stoichiometry. X-ray photoluminescence was performed on CdS/ITO glass for the first time. The performance of CdTe/CdS solar cells was improved as a result of ITO surface treatments, this being due to improvements in the physical structure of the CdS interfaces.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126884037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Co-sputtered Cd/sub 2/SnO/sub 4/ films as front contacts for CdTe solar cells 共溅射Cd/sub 2/SnO/sub 4/薄膜作为CdTe太阳能电池的前触点
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190639
R. Mamazza, S. Yu, D. Morel, C. Ferekides
{"title":"Co-sputtered Cd/sub 2/SnO/sub 4/ films as front contacts for CdTe solar cells","authors":"R. Mamazza, S. Yu, D. Morel, C. Ferekides","doi":"10.1109/PVSC.2002.1190639","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190639","url":null,"abstract":"Cd/sub 2/SnO/sub 4/ thin films were investigated from a materials point of view as well as from an application point of view through their incorporation into CdTe based solar cells. Cd/sub 2/SnO/sub 4/ was deposited by co-sputtering from CdO and SnO/sub 2/ targets. The lowest resistivity achieved was 2.01/spl times/10/sup -4/ /spl Omega/-cm with a mobility of 29.2 cm/sup 2//V/s and a carrier concentration of 8.47 /spl times/ 10/sup 20/ cm/sup -3/. For this same sample the average transmission was over 90% over the visible and near IR spectrum (400-900nm). When Cd/sub 2/SnO/sub 4/ were used as part of the front contact in thin film CdTe solar cells V/sub oc/'s over 840 mV, J/sub sc/'s over 23 mA/cm/sup 2/, and ff's over 68.0% were obtained with the best to-date efficiency being 14.0%.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"441 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123273175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The PETROBRAS 45.5 kWp, grid-connected PV system: a comparative study of six thin-film module types operating in Brazil 巴西国家石油公司45.5 kWp并网光伏系统:在巴西运行的六种薄膜组件类型的比较研究
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190880
R. Ruther, A.J.G. da Silva, A. Montenegro, I. Salamoni, R. Araujo
{"title":"The PETROBRAS 45.5 kWp, grid-connected PV system: a comparative study of six thin-film module types operating in Brazil","authors":"R. Ruther, A.J.G. da Silva, A. Montenegro, I. Salamoni, R. Araujo","doi":"10.1109/PVSC.2002.1190880","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190880","url":null,"abstract":"Previous work carried out at LABSOLAR in Brazil has established that thin-film amorphous silicon (a-Si) is a good choice of PV technology for operation in warm and sunny climates. Meanwhile, PETROBRAS, the Brazilian oil company, is looking at different renewable energy technologies to spread its energy mix and energy product portfolio. The company, recognizing the present and future role that photovoltaics will play in the world energy scenario, has established links with LABSOLAR to receive training and build knowledge on PV. This paper describes the design and installation of the so far largest PV system in the country: a 45.5 kWp grid-connected thin-film system, comprising six sub-systems using PV modules from four different a-Si manufacturers, one cadmium telluride (CdTe) and one copper indium gallium diselenide (CIGS) manufacturer. The fully monitored PV installation will compare the long-term output performance of state-of-the-art thin-film technologies, looking at annual energy yields and performance ratios at both module and system levels.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123356253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing 27.5%效率的InGaP/InGaAs/Ge先进三结(ATJ)空间太阳能电池，用于大批量生产
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190700
M. Stan, D. Aiken, P. Sharps, N. Fatemi, F. Spadafora, J. Hills, H. Yoo, B. Clevenger
{"title":"27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing","authors":"M. Stan, D. Aiken, P. Sharps, N. Fatemi, F. Spadafora, J. Hills, H. Yoo, B. Clevenger","doi":"10.1109/PVSC.2002.1190700","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190700","url":null,"abstract":"Results of improvements in Emcore's large-area ( a 26.6 cm/sup 2/) triple-junction (3J) space solar cells are presented. Volume production of this InGaP/InGaAs/Ge advanced triple-junction (ATJ) process shows an individual cell average conversion efficiency of 27.5% (AMO, 135.3 mW/cm, 28/spl deg/C) with observed lot average conversion efficiencies greater than 28.0%. The ATJ cells maintain a radiation hard design similar to that used in the first generation Emcore 3J solar cells. The power remaining factors after irradiation with 1-MeV electrons at fluences of 5E14, 1E15, and 5E15 e/ cm/sup 2/ are 0.89, 0.85,and 0.74 respectively. The realized improvements in the ATJ solar cell have resulted in part from an improved \"blue\" response in the Ge subcell, the addition of indium to the GaAs middle cell composition, and from improvements to the bulk material quality of the InGaP top cell.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126439094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Investigation on the role of oxygen in /spl mu/c-Si:H thin film and its deposition process with VHF-PECVD 氧在/spl mu/c-Si:H薄膜中的作用及其VHF-PECVD沉积工艺研究
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190838
Huidong Yang, Chunya Wu, Y. Mai, Hongbo Li, Yan Li, X. Geng, Ying Zhao, S. Xiong
{"title":"Investigation on the role of oxygen in /spl mu/c-Si:H thin film and its deposition process with VHF-PECVD","authors":"Huidong Yang, Chunya Wu, Y. Mai, Hongbo Li, Yan Li, X. Geng, Ying Zhao, S. Xiong","doi":"10.1109/PVSC.2002.1190838","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190838","url":null,"abstract":"Investigations on the role of oxygen in /spl mu/c-Si:H films deposited with and without load lock chamber by VHF-PECVD technique have been reported in this paper. From the results of in-situ optical emission spectroscopy (OES), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared absorption (FTIR) measurements, it can be identified that oxygen existing in /spl mu/c-Si:H film with different bonding modes, namely Si-O bonding, O-H bonding and O-O bonding. In addition, the influences of oxygen on the structural and electrical properties of films are studied with Raman spectra, conductivity (/spl sigma/) and active energy (E/sub a/) measurements. The results reveal the structural properties of /spl mu/c-Si:H film strongly depends on the bonding modes of the existing oxygen, the electrical properties especially show that the role of oxygen in /spl mu/c-Si:H films is different from those in a-Si:H and the essential mechanism needs to be further explored.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121445921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High efficiency thin film silicon solar cell and module 高效薄膜硅太阳能电池及组件
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190800
K. Yamamoto, A. Nakajima, M. Yoshimi, T. Sawada, S. Fukuda, K. Hayashi, T. Suezaki, M. Ichikawa, Y. Koi, M. Goto, H. Takata, Y. Tawada
{"title":"High efficiency thin film silicon solar cell and module","authors":"K. Yamamoto, A. Nakajima, M. Yoshimi, T. Sawada, S. Fukuda, K. Hayashi, T. Suezaki, M. Ichikawa, Y. Koi, M. Goto, H. Takata, Y. Tawada","doi":"10.1109/PVSC.2002.1190800","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190800","url":null,"abstract":"An initial efficiency of 14.5% (Jsc=14.4mA/cm/sup 2/, Voc=1.41V, FF=71.9%) has been achieved for a-Si:H/transparent inter-layer/crystalline Si solar cell (total area of 1cm/sup 2/). Both a-Si and crystalline Si films were fabricated by plasma chemical vapor deposition at low temperature. The short circuit current (Jsc) was enhanced by the introduction of transparent interlayer without increasing the thickness of a-Si:H layer. An initial aperture efficiency of 12.3% has been achieved for 910/spl times/455mm/sup 2/ a-Si/crystalline Si thin film integrated solar cell module. Reasonably high deposition rate of 11 A/s for the deposition of crystalline Si for 1/spl times/1m/sup 2/ area has been achieved. By applying a deposition conditions of this high deposition rate, an initial aperture efficiency of 11.2% has been obtained above sized Si stacked solar cell module.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126407199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 65
Stress diagnostics in multicrystalline silicon wafers using an acoustic technique 基于声学技术的多晶硅片应力诊断
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190526
A. Belyaev, S. Lulu, I. Tarasov, S. Ostapenko, J. Kalejs
{"title":"Stress diagnostics in multicrystalline silicon wafers using an acoustic technique","authors":"A. Belyaev, S. Lulu, I. Tarasov, S. Ostapenko, J. Kalejs","doi":"10.1109/PVSC.2002.1190526","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190526","url":null,"abstract":"Residual stress is generated in silicon crystals during growth of material for use as substrates for solar cells. This stress affects yield in processing the wafers into cells and modules. We report here on the application of a resonance acoustic method, used previously to measure stress in CZ silicon wafers, to characterize multicrystalline EFG silicon ribbon wafers.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121220890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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