Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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A 2-kW concentrating PV array using triple junction cells 使用三结电池的2kw聚光光伏阵列
R. Sherif, A. Paredes, H. Cotal, H. Hayden
{"title":"A 2-kW concentrating PV array using triple junction cells","authors":"R. Sherif, A. Paredes, H. Cotal, H. Hayden","doi":"10.1109/PVSC.2002.1190866","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190866","url":null,"abstract":"This paper discusses a dense array receiver design that utilizes Spectrolab's high efficiency triple junction cells. The system involves the use of a reflective dish optics and dual tracking system, and at 300-Sun concentration, the peak power is projected to exceed 2 kW. The details of the cell and module design are discussed in this paper.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115372672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Defects in photovoltaic materials and the origin of failure to dope them 光伏材料的缺陷及未掺杂的原因
A. Zunger, Ç. Kılıç, L. Wang
{"title":"Defects in photovoltaic materials and the origin of failure to dope them","authors":"A. Zunger, Ç. Kılıç, L. Wang","doi":"10.1109/PVSC.2002.1190611","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190611","url":null,"abstract":"I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOs work. Recent results on the surprising stability of polar [112] + (1~1~2~) surfaces of CIS will also be described in this context.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115747043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
kWh/kWp dependency on PV technology and balance of systems performance kWh/kWp依赖于光伏技术和系统性能的平衡
Steve J. Ransome, J. H. Wohlgemuth
{"title":"kWh/kWp dependency on PV technology and balance of systems performance","authors":"Steve J. Ransome, J. H. Wohlgemuth","doi":"10.1109/PVSC.2002.1190875","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190875","url":null,"abstract":"BP Solar is continually analysing performance data on various PV technologies in a long term test program using logging sites worldwide with data from third parties, test houses and in house measurements. kWh/kWp values are calculated to show the energy generated divided by the nameplate STC rating. This paper studies how only some of the differences found depend on the intrinsic properties of the PV module and how much depend on other factors like BOS performance (inverter, V/sub MAX/ tracking) and \"rated versus actual\" watts.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"423 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116690449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Passivation property of SiN/sub x/:H/SiO/sub 2/ double layer formed by ammonia microwave remote plasma CVD method 氨微波远程等离子体气相沉积法制备SiN/sub x/:H/SiO/sub 2/双层膜的钝化性能
Y. Fushimi, T. Wake, M. Fujiwara, T. Saitoh, K. Kamisako
{"title":"Passivation property of SiN/sub x/:H/SiO/sub 2/ double layer formed by ammonia microwave remote plasma CVD method","authors":"Y. Fushimi, T. Wake, M. Fujiwara, T. Saitoh, K. Kamisako","doi":"10.1109/PVSC.2002.1190537","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190537","url":null,"abstract":"We evaluated the passivation property of SiN/sub x/:H/SiO/sub 2/ double layers formed at various temperatures by using hydrogen radical annealing. The passivation property was analyzed by measuring effective lifetime and interface state density. The effective lifetime and the interface state density depended strongly on the deposition temperature of SiN/sub x/:H layers. The effect of hydrogen radical annealing for SiN/sub x/:H/SiO/sub 2/ double layer's was weakened with an increase in deposition temperature of SiN/sub x/:H. It was speculated that the annealing effect depending on deposition temperature was caused during deposition. At the deposition temperature of 350/spl deg/C, the annealing effect during deposition was nearly equal to the hydrogen radical annealing effect after the deposition. The annealing with ammonia afterglow plasma improved effectively the effective lifetime in SiO/sub 2//c-Si single layers. When the deposition time is chosen, the annealing effect should be taken into consideration.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117153820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A cost analysis of very large scale PV (VLS-PV) system on the world deserts 世界沙漠超大规模光伏(VLS-PV)系统成本分析
K. Kurokawa, K. Kato, M. Ito, K. Komoto, T. Kichimi, H. Sugihara
{"title":"A cost analysis of very large scale PV (VLS-PV) system on the world deserts","authors":"K. Kurokawa, K. Kato, M. Ito, K. Komoto, T. Kichimi, H. Sugihara","doi":"10.1109/PVSC.2002.1190939","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190939","url":null,"abstract":"To preserve the Earth, a 100 MW very large-scale photovoltaic power generation (VLS-PV) system is estimated assuming that it is installed on the world deserts, which are Sahara, Negev, Thar, Sonora, Great Sandy and Gobi desert. These deserts are good for installing the system because of large solar irradiation and large land area. A PV array is dimensioned in detail in terms of array layout, support, foundation, wiring and so on. Then generation cost of the system is estimated based on the methodology of life-cycle cost (LCC). As a result of the estimation, the generation cost is calculated as 5.3 cent/kWh on Sahara desert, 6.4 cent/kWh on Gobi desert assuming PV module price of $1.0/W, system lifetime of 30 years and interest rate of 3%. These results suggest that VLS-PV systems are economically feasible on sufficient irradiation site even if existing PV system technologies are applied, when PV module price will decrease to a level of $1.0/W.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117216006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Progress towards the practical implementation of the intermediate band solar cell 中间波段太阳能电池实际应用的进展
A. Luque, A. Martí, P. Wahnón, L. Cuadra, C. Tablero, C. Stanley, A. McKee, D. Zhou, R. Konenkamp, R. Bayón, A. Belaidi, J. Alonso, J. Ruiz, J. Fernández, P. Palacios, N. López
{"title":"Progress towards the practical implementation of the intermediate band solar cell","authors":"A. Luque, A. Martí, P. Wahnón, L. Cuadra, C. Tablero, C. Stanley, A. McKee, D. Zhou, R. Konenkamp, R. Bayón, A. Belaidi, J. Alonso, J. Ruiz, J. Fernández, P. Palacios, N. López","doi":"10.1109/PVSC.2002.1190820","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190820","url":null,"abstract":"The intermediate band solar cell is a novel solar cell with the potential of achieving a limiting efficiency of 63.2 % on the basis of the absorption of two sub-bandgap photons to create one electron-hole pair. The path towards its practical implementation has started following three strategies: a) Engineering the IB material through quantum dot technology, b) Direct synthesis of the IB material and c) creation of a localized absorber layer within a highly porous large bandgap semiconductor.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121127050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analysis of the GaInP/GaAs/1-eV/Ge cell and related structures for terrestrial concentrator application 地面聚光用GaInP/GaAs/1-eV/Ge电池及相关结构分析
D. Friedman, S. Kurtz, J. Geisz
{"title":"Analysis of the GaInP/GaAs/1-eV/Ge cell and related structures for terrestrial concentrator application","authors":"D. Friedman, S. Kurtz, J. Geisz","doi":"10.1109/PVSC.2002.1190714","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190714","url":null,"abstract":"We analyze the potential of the GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize the following factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the AM1.5 direct spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) Increasing temperature lowers the junction bandgaps, redistributing light to the top junctions. (4) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than /spl sim/75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124861397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Radiation hard and gravimetric efficient thin film InP solar cells 辐射硬和重量高效薄膜InP太阳能电池
Yanning Sun, J. Woodall, J.L. Freeout, R. Walters
{"title":"Radiation hard and gravimetric efficient thin film InP solar cells","authors":"Yanning Sun, J. Woodall, J.L. Freeout, R. Walters","doi":"10.1109/PVSC.2002.1190772","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190772","url":null,"abstract":"We present characterization results of advanced prototypes of InP based thin film solar cells designed to be gravimetrically efficient (high power to weight ratio), and radiation hardened, especially with respect to operations in orbits flie in the \"van Allen Belt\", i.e. at an altitude of 3200km, where the radiation is extremely intense. Our specially designed cells help achieve high radiation resistance by collecting photogenerated carriers by drift due to the electrical fields rather than by usual carrier diffusion associated with normal p-n junction solar cells. High-energy particle irradiation damage to this thin film InP cells has been studied. The result shows that the short circuit current is not affected by high fluence of 1-MeV proton irradiation.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124880812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Experimental investigation of spectral effects on amorphous silicon solar cells in outdoor operation 非晶硅太阳能电池室外运行光谱效应的实验研究
R. Gottschalg, T. Betts, D. Infield, M. J. Kearney
{"title":"Experimental investigation of spectral effects on amorphous silicon solar cells in outdoor operation","authors":"R. Gottschalg, T. Betts, D. Infield, M. J. Kearney","doi":"10.1109/PVSC.2002.1190807","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190807","url":null,"abstract":"The effect of varying spectrum on PV output is often underestimated in the case of amorphous silicon photovoltaic devices. This paper gives an indication of the order of magnitude of the seasonal variation of the useful irradiance in a maritime climate and also shows that this will involve a direct change in efficiency. This can be expected to be in the range of 15 percent around the annual average, thus explaining the seasonal performance. The spectral effects are investigated by distinguishing between a primary and a secondary effect. The primary effect is dependent on the availability of useful spectral irradiance while the secondary effect depends also on the spectral composition of the light in the useful range. It is shown that the secondary effect is especially significant for double junction devices.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125022683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Photovoltaic grid-connected inverter using two-switch buck-boost converter 光伏并网逆变器采用双开关降压升压变换器
K. Chomsuwan, P. Prisuwanna, V. Monyakul
{"title":"Photovoltaic grid-connected inverter using two-switch buck-boost converter","authors":"K. Chomsuwan, P. Prisuwanna, V. Monyakul","doi":"10.1109/PVSC.2002.1190902","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190902","url":null,"abstract":"This paper presents a two-stage photovoltaic grid-connected inverter. The first stage is a two-switch buck-boost circuit that performs various functions; tracking a maximum power point of the photovoltaic array and controlling current using fixed frequency current mode control technique; as well as reforming a direct current waveform to an absolute sinusoidal waveform. The second stage is a H-bridge switch that converts an absolute sinusoidal waveform to a sinusoidal waveform with a low harmonic distortion current and connected to utility. The system configuration is reliable using a single-chip DSP controller. Experimental results satisfy with simulation.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125082965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 82
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