A. Luque, A. Martí, P. Wahnón, L. Cuadra, C. Tablero, C. Stanley, A. McKee, D. Zhou, R. Konenkamp, R. Bayón, A. Belaidi, J. Alonso, J. Ruiz, J. Fernández, P. Palacios, N. López
{"title":"Progress towards the practical implementation of the intermediate band solar cell","authors":"A. Luque, A. Martí, P. Wahnón, L. Cuadra, C. Tablero, C. Stanley, A. McKee, D. Zhou, R. Konenkamp, R. Bayón, A. Belaidi, J. Alonso, J. Ruiz, J. Fernández, P. Palacios, N. López","doi":"10.1109/PVSC.2002.1190820","DOIUrl":null,"url":null,"abstract":"The intermediate band solar cell is a novel solar cell with the potential of achieving a limiting efficiency of 63.2 % on the basis of the absorption of two sub-bandgap photons to create one electron-hole pair. The path towards its practical implementation has started following three strategies: a) Engineering the IB material through quantum dot technology, b) Direct synthesis of the IB material and c) creation of a localized absorber layer within a highly porous large bandgap semiconductor.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2002.1190820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The intermediate band solar cell is a novel solar cell with the potential of achieving a limiting efficiency of 63.2 % on the basis of the absorption of two sub-bandgap photons to create one electron-hole pair. The path towards its practical implementation has started following three strategies: a) Engineering the IB material through quantum dot technology, b) Direct synthesis of the IB material and c) creation of a localized absorber layer within a highly porous large bandgap semiconductor.