Passivation property of SiN/sub x/:H/SiO/sub 2/ double layer formed by ammonia microwave remote plasma CVD method

Y. Fushimi, T. Wake, M. Fujiwara, T. Saitoh, K. Kamisako
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引用次数: 1

Abstract

We evaluated the passivation property of SiN/sub x/:H/SiO/sub 2/ double layers formed at various temperatures by using hydrogen radical annealing. The passivation property was analyzed by measuring effective lifetime and interface state density. The effective lifetime and the interface state density depended strongly on the deposition temperature of SiN/sub x/:H layers. The effect of hydrogen radical annealing for SiN/sub x/:H/SiO/sub 2/ double layer's was weakened with an increase in deposition temperature of SiN/sub x/:H. It was speculated that the annealing effect depending on deposition temperature was caused during deposition. At the deposition temperature of 350/spl deg/C, the annealing effect during deposition was nearly equal to the hydrogen radical annealing effect after the deposition. The annealing with ammonia afterglow plasma improved effectively the effective lifetime in SiO/sub 2//c-Si single layers. When the deposition time is chosen, the annealing effect should be taken into consideration.
氨微波远程等离子体气相沉积法制备SiN/sub x/:H/SiO/sub 2/双层膜的钝化性能
采用氢自由基退火技术对不同温度下形成的SiN/sub x/:H/SiO/sub 2/双层的钝化性能进行了评价。通过测量有效寿命和界面态密度来分析钝化性能。SiN/sub x/:H层的有效寿命和界面态密度与沉积温度密切相关。氢自由基退火对SiN/sub x/:H/SiO/sub 2/双层的影响随着SiN/sub x/:H沉积温度的升高而减弱。推测沉积过程中产生了随沉积温度变化的退火效应。当沉积温度为350/spl℃时,沉积过程中的退火效应与沉积后的氢自由基退火效应基本一致。氨余辉等离子体退火有效地提高了SiO/ sub2 /c-Si单层的有效寿命。在选择沉积时间时,应考虑退火效果。
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