光伏材料的缺陷及未掺杂的原因

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190611

A. Zunger, Ç. Kılıç, L. Wang

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引用次数: 4

摘要

我将回顾常见光伏材料中各种固有缺陷形成能量的基本物理原理。然后，我用上述原则来解释为什么半导体掺杂通常是有限的，以及哪些设计原则可以用来绕过这些限制。这项工作可以帮助设计掺杂吸收材料的策略，并解释tco的工作原理。最近关于极性[112]+(1~1~2~)表面的惊人稳定性的结果也将在此背景下描述。

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Defects in photovoltaic materials and the origin of failure to dope them

I will review the basic physical principles underlying the formation energy of various intrinsic defects in common photovoltaic materials. I then use the above principles to explain why doping of semiconductors is in general, limited and which design principles can be used to circumvent such limits. This work can help design strategies of doping absorber materials as well as explain how TCOs work. Recent results on the surprising stability of polar [112] + (1~1~2~) surfaces of CIS will also be described in this context.

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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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