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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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Ribbon-growth-on-substrate: Progress in high-speed crystalline silicon wafer manufacturing 衬底上带状生长:高速晶硅晶圆制造的进展
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190522
A. Schonecker, L. Laas, A. Gutjahr, P. Wyers, A. Reinink, B. Wiersma
{"title":"Ribbon-growth-on-substrate: Progress in high-speed crystalline silicon wafer manufacturing","authors":"A. Schonecker, L. Laas, A. Gutjahr, P. Wyers, A. Reinink, B. Wiersma","doi":"10.1109/PVSC.2002.1190522","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190522","url":null,"abstract":"The ribbon-growth-on-substrate (RGS) silicon wafer manufacturing technology is the most promising highspeed wafer production technique under development at the moment. It has the promise to lead to a manufacturing technology, which allows silicon wafer manufacturing at the 25 MWp/a to 50 MWp/a level. A future development of this technology in the areas, RGS machine prototyping, wafer quality improvement and solar cell process optimization should lead to a commercialization of this technology in 2005. In the following a status of the RGS technology today and the most probable road ahead is outlined.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115077356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Advanced defect characterization by combining temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS) 结合温度和注射依赖寿命谱(TDLS和IDLS)的高级缺陷表征
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190488
Stefan Rein, P. Lichtner, W. Warta, Stefan W. Glunz
{"title":"Advanced defect characterization by combining temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS)","authors":"Stefan Rein, P. Lichtner, W. Warta, Stefan W. Glunz","doi":"10.1109/PVSC.2002.1190488","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190488","url":null,"abstract":"Apart from detecting the presence of electrically active defects, lifetime measurements allow for a direct identification of defects if the injection and temperature dependence is analyzed. Recent studies have revealed that Temperature Dependent Lifetime Spectroscopy (TDLS) and Injection Dependent Lifetime Spectroscopy (IDLS) are complementary: while the energy level Et is more easily gained from TDLS, IDLS is more adequate to determine the capture cross section ratio k = /spl sigma//sub n///spl sigma//sub p/. The present work demonstrates on intentionally metal-contaminated silicon that a complete defect characterization is achievable by combining IDLS and TDLS. Additionally, it is shown for the first time that k and the band half of the defect location can often be determined from TDLS alone if the entire TDLS-curve is modeled.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114591919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Certification of photovoltaic inverters: the initial step toward PV system certification 光伏逆变器认证:光伏系统认证的第一步
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190872
W. Bower, C. Whitaker
{"title":"Certification of photovoltaic inverters: the initial step toward PV system certification","authors":"W. Bower, C. Whitaker","doi":"10.1109/PVSC.2002.1190872","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190872","url":null,"abstract":"There is no complete photovoltaic product (component or system) certification program in effect today in the United States. Photovoltaic (PV) modules and inverters are listed for safety (using standards UL1703 and UL1741, respectively), and certification for environmental qualification of PV modules is conducted. However these do not provide critical performance information such as PV module energy rating, inverter performance characteristics, or system performance. Domestic and international standards organizations have begun waiting requirements for photovoltaic system certification that are aimed primarily at small stand-alone applications. The module and balance-of-system industries often provide inconsistent or insufficient specifications and data to designers and customers to allow adequate comparison or a true prediction of performance for installed systems. This paper describes an industry consensus process to establish necessary testing protocols for certification of inverters.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116974624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Control of dark currents in multi-quantum well solar cells by use of thin tunnel barriers 利用薄隧道势垒控制多量子阱太阳能电池中的暗电流
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190781
Y. Okada, T. Takeda, M. Kawabe
{"title":"Control of dark currents in multi-quantum well solar cells by use of thin tunnel barriers","authors":"Y. Okada, T. Takeda, M. Kawabe","doi":"10.1109/PVSC.2002.1190781","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190781","url":null,"abstract":"In order to investigate the predicted performance of solar cells, which employ multi-quantum wells (MQWs) and other types of quantum structures, it is important that one achieves a high material quality with minimum non-radiative recombination losses at the QW heterointerfaces, and a high escape rate of photocarriers out of QWs into the \"collector\" region via optimization of MQW structures. In this work, we have investigated on; (1) the fabrication InGaAs/GaAs-based MQW solar cells by using atomic H-assisted molecular beam epitaxy (H-MBE) technique in order for efficient defect and interface control, and (2) the effect of \"tunnel barriers\" introduced within a conventional-type MQW solar cell comprised of a series of square-shaped QWs. In particular, this structure is intended for reducing the dark current thereby improving the overall response of MQW solar cells.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124956457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of a maximum power point sensor for photovoltaic systems 光伏系统最大功率点传感器的设计
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190887
Jason Schripsema, M. Johnston, Alysha Holmes
{"title":"Design of a maximum power point sensor for photovoltaic systems","authors":"Jason Schripsema, M. Johnston, Alysha Holmes","doi":"10.1109/PVSC.2002.1190887","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190887","url":null,"abstract":"One of the challenges inherent in assessing the performance of a large number of grid-connected photovoltaic systems is the cost of the tools necessary to measure and record solar irradiance and PV array temperature. This paper presents a new, low-cost tool called a maximum power point sensor that is designed to predict the performance of an PV array and act as a reference from which to gauge the energy produced by a system. Such a device could also be used to provide an indication of potential problems within a system. The design, construction, and field testing of this device is described.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123671421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Production of low-cost solar grade (SoG) silicon feedstock 低成本太阳级硅原料的生产
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190534
C. Khattak, D. B. Joyce, F. Schmid
{"title":"Production of low-cost solar grade (SoG) silicon feedstock","authors":"C. Khattak, D. B. Joyce, F. Schmid","doi":"10.1109/PVSC.2002.1190534","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190534","url":null,"abstract":"A simple refining process of blowing moist gases over molten silicon removed high segregation impurities, especially B and P, and reduced other impurities. Using this process with heavily B-doped (Hi-B) silicon scrap from the electronic industry will double the feedstock available to the PV industry short term. When the refining process is followed by directional solidification, it can be used for upgrading metallurgical grade (MG) silicon to produce solar grade (SoG) silicon. For the long term, total processing in an MG silicon production plant can result in $10/kg SoG silicon feedstock.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121716899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A review of field performance of EVA-based encapsulants eva基封装剂的现场性能综述
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190948
R. Tucker, R.S. Yorgensen
{"title":"A review of field performance of EVA-based encapsulants","authors":"R. Tucker, R.S. Yorgensen","doi":"10.1109/PVSC.2002.1190948","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190948","url":null,"abstract":"As part of a past PVMaT contract (ZAG-3-11219-02-105661), several encapsulant formulations, developed for enhanced photothermal stability, were fielded at the STAR facility (Arizona) for long-term testing and observation. In all, 36 modules (4 different module manufacturers) have been evaluated. At the annual evaluation point, the modules had been exposed in the field for 4.5 years. Visual inspection and I-V measurements were made for each module. Upon inspection, all formulations designed to eliminate the discoloring mechanism appeared to be clear. The relative short-circuit current (I/sub sc/) was measured for each module. For all module types, it was found that the dependence of the relative Isc with exposure time was the same for a particular module type, regardless and exclusive of the encapsulant formulation.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122456397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiaton effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use 地面用高效InGaP/InGaAs/Ge三结太阳能电池的辐射效应
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190771
M. Imaizumi, T. Takamoto, T. Ohshima, M. Yamaguchi, H. Itoh, S. Matsuda
{"title":"Radiaton effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use","authors":"M. Imaizumi, T. Takamoto, T. Ohshima, M. Yamaguchi, H. Itoh, S. Matsuda","doi":"10.1109/PVSC.2002.1190771","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190771","url":null,"abstract":"Radiation hardness of terrestrial InGaP/InGaAs/Ge high-efficiency triple-junction solar cells has been studied to clarify the potential of these cells for space use. Comparison of irradiation effects by 1MeV electrons and 3MeV and 10MeV protons on I-V performance parameters of the terrestrial cell and of a space triple-junction cell has exhibited that the radiation tolerance of the terrestrial cell is about one order of magnitude in fluence lower than the space cell, but it is almost equivalent of that of GaAs single junction cells. Results of irradiation tests with various energies of protons (0.03-10MeV) on the terrestrial triple junction cell indicate that a few hundreds keV protons cause the greatest damage to the cell among the energy region. The terrestrial cell is shown to be applicable to gentle environment space missions without any modification.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122783511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Current-induced performance degradation of Cz-Si solar cells Cz-Si太阳能电池的电流诱导性能退化
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190550
H. Hashigami, Y. Itakura, T. Saitoh
{"title":"Current-induced performance degradation of Cz-Si solar cells","authors":"H. Hashigami, Y. Itakura, T. Saitoh","doi":"10.1109/PVSC.2002.1190550","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190550","url":null,"abstract":"B-O-correlated performance degradation in Cz-Si solar cells has been investigated. The current is injected into solar cells in comparison with the light-induced cell performance degradation. A significant difference is found between current injection and illumination in low-injection region. The degradation in high injection region is explained by lifetime degradation calculated from J/sub sc/-V/sub /spl prop// curves. A significant degradation is a rapid performance drop at the initial decay. V/sub /spl prop// recovery property is found to be processed single-exponentially in spite of the multi-exponential degradation.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"542 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124265472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Direct write processing for photovoltaic cells 光伏电池的直接写入处理
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190854
T. Rivkin, C. Curtis, A. Miedaner, J. Perkins, J. Alleman, D. Ginley
{"title":"Direct write processing for photovoltaic cells","authors":"T. Rivkin, C. Curtis, A. Miedaner, J. Perkins, J. Alleman, D. Ginley","doi":"10.1109/PVSC.2002.1190854","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190854","url":null,"abstract":"Direct writing of solar cell components is an attractive processing approach. We have fabricated a 6.8% Si solar cell using silver ink based electrodes. Ohmic contact through the antireflection (AR) coating was obtained with pure Ag electrodes at 850/spl deg/C. We also report on highly conductive silver metallizations and initial results on direct-write TCO demonstrating a 100-micron spatial resolution produced by inkjet printing.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129806733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
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