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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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Rapid thermal processing of CIS precursors CIS前体的快速热加工
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190655
L. Kerr, S. Kim, S. Kincal, M. Ider, S. Yoon, T. Anderson
{"title":"Rapid thermal processing of CIS precursors","authors":"L. Kerr, S. Kim, S. Kincal, M. Ider, S. Yoon, T. Anderson","doi":"10.1109/PVSC.2002.1190655","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190655","url":null,"abstract":"An alternative process for CuInSe/sub 2/ formation is presented. In this approach, a binary two-layer precursor CuSe/In-Se is first deposited on a Mo/glass substrate at low temperature by migration enhanced epitaxy (MEE). When the Se ambient is controlled, rapid thermal processing (RTP) is able to synthesize single phase CuInSe/sub 2/. The structure, morphology, and composition of the films were characterized by XRD, SEM and ICP.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123769577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Substrate dependence of crystallization of silicon films prepared by hydrogen radical CVD method 氢自由基CVD法制备硅膜结晶过程中衬底依赖性的研究
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190840
K. Kimura, T. Shirasawa, N. Kobayashi, K. Kamisako
{"title":"Substrate dependence of crystallization of silicon films prepared by hydrogen radical CVD method","authors":"K. Kimura, T. Shirasawa, N. Kobayashi, K. Kamisako","doi":"10.1109/PVSC.2002.1190840","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190840","url":null,"abstract":"In production of microcrystalline silicon (/spl mu/c-Si:H) films, a substrate is a significant element by which the crystallization of films is affected. By using a hydrogen radical CVD method, we investigated how the growth of /spl mu/c-Si:H is affected by differences of substrate surfaces. Three types of substrate surface were used: a glass plate and evaporated aluminum thin films electrically floated and grounded. Differences between influences of substrate surfaces were confirmed clearly at the initial growth of /spl mu/c-Si:H films. The highest crystallinity was obtained on the grounded aluminum and the lowest was on the floated aluminum. These results suggest that differences of electrical potential of substrate surface affect strongly the initial growth of microcrystalline films. Hydrogen ions seem to suppress crystallization of deposited films.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124926106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial technology of Si/CoSi/sub 2//Si layers for solar cell application 太阳能电池用Si/CoSi/sub 2/ Si外延技术
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190515
Y. Tsuji, S. Noda, M. Mizukami, H. Komiyama
{"title":"Epitaxial technology of Si/CoSi/sub 2//Si layers for solar cell application","authors":"Y. Tsuji, S. Noda, M. Mizukami, H. Komiyama","doi":"10.1109/PVSC.2002.1190515","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190515","url":null,"abstract":"High quality Si/CoSi/sub 2//Si double heterostructures were developed using a conventional magnetron sputtering system. In this technique, CoSi/sub 2/ is etched away by hydrofluoric acid allowing the thin monocrystalline Si film to be separated from the supporting single crystal silicon substrate, which is reused many times. This process promises to allow fabrication of a new type of highly efficient large area thin film monocrystalline Si solar cell at low cost. The crystalline quality of the films was checked by transmission electron microscopy. We also studied the growth mechanism of epitaxial CoSi/sub 2/ and demonstrate that phase formation is controlled by diffusion of Co through the growing CoSi/sub x/.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125092397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Zinc-diffused InAsSbP/InAs and Ge TPV cells 锌扩散的InAsSbP/InAs和Ge TPV细胞
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190736
V. Khvostikov, O.A. Khostikov, E. Oliva, V. Rumyantsev, M. Shvarts, T.S. Tabarov, V. Andreev
{"title":"Zinc-diffused InAsSbP/InAs and Ge TPV cells","authors":"V. Khvostikov, O.A. Khostikov, E. Oliva, V. Rumyantsev, M. Shvarts, T.S. Tabarov, V. Andreev","doi":"10.1109/PVSC.2002.1190736","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190736","url":null,"abstract":"By means of LPE growth and Zn diffusion, TPV cells and mid-IR photodetectors based on p-InAsSbP/n-InAsSbP/n-InAs and p-InAs/n-InAs structures have been fabricated with the photosensitivity widened in the infrared range (2.5-3.4 /spl mu/m). Zinc - diffused p-n Ge-based TPV cells have been fabricated with external quantum yield as high as 0.9-0.95 and high short circuit current of 31.6 mA/cm/sup 2/ under sunlight with cut-off at /spl lambda/< 900 nm AMO spectrum. The Ge-based TPV cells with back-surface mirror demonstrate reflection of 85% for the sub-bandgap photons. The Ge cells with GaAs window have been developed for PV and TPV applications with using the combination of liquid-phase epitaxy and Zn-diffusion processes. Efficiency of more than 5% has been measured in p-GaAs/p-Ge/n-Ge cells under cut-off (/spl lambda/<900 nm) AM1.5 spectrum at photocurrent densities of 3+20 A/cm/sup 2/.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122883823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
PVMaT contributions towards Evergreen Solar's new factory PVMaT对Evergreen Solar新工厂的贡献
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190457
J. Hanoka
{"title":"PVMaT contributions towards Evergreen Solar's new factory","authors":"J. Hanoka","doi":"10.1109/PVSC.2002.1190457","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190457","url":null,"abstract":"A three year PVMaT project which ended in May, 2001 has resulted in major developments in PV module manufacturing technology. The most significant have been in the areas of silicon ribbon growth and cell processing. Evergreen has opened a state-of-the-art multimegawatt factory that has incorporated these advances.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133636200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advances in performance and high-throughput manufacturing of thin-film CdS/CdTe modules 薄膜CdS/CdTe模组的性能与高通量制造进展
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190625
D. Rose, R. Powell, U. Jayamaha, M. Maltby
{"title":"Advances in performance and high-throughput manufacturing of thin-film CdS/CdTe modules","authors":"D. Rose, R. Powell, U. Jayamaha, M. Maltby","doi":"10.1109/PVSC.2002.1190625","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190625","url":null,"abstract":"Progress in high-throughput manufacture and efficiency of 0.72 m/sup 2/ PV modules is reported. High throughput is made possible by vapor-transport deposition of the CdS/CdTe semiconductor layers and other highspeed processes. A baseline total-area efficiency of 7.1% was demonstrated at a rate of over 3000 modules/month. Opportunities for increase in efficiency over this baseline include reduced optical loss in the CdS, improved semiconductor uniformity, and improved processing resulting from structured experiments. Achievement of a module with NREL-measured 10.1% aperture efficiency is reported (P/sub max/ of 67.1 W and total-area efficiency of 9.3%). Diagnostic systems, uniformity characterization by surface photovoltage and reflectance, research on cell operation, glass properties, material utilization, equipment durability, and success with EH&S control are also discussed.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133951720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimizing the front side metallization process using the Corescan 使用Corescan优化正面金属化工艺
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190528
A. van der Heide, J. Bultman, J. Hoomstra, A. Schonecker, G. Wyers, W. Sinke
{"title":"Optimizing the front side metallization process using the Corescan","authors":"A. van der Heide, J. Bultman, J. Hoomstra, A. Schonecker, G. Wyers, W. Sinke","doi":"10.1109/PVSC.2002.1190528","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190528","url":null,"abstract":"In solar cell manufacturing it is difficult to optimize screen printed front side metallization, in particular to obtain good contact over the entire cell. The Corescan enables mapping of contact resistance of full cell surfaces. Using these mappings, it is possible to diagnose and exclude reasons for poor contact formation. In this study, several process conditions have been studied. Cross-belt temperature non-uniformity in the firing furnace turns out to be a reason for large contact resistance differences. This shows that the acceptable firing temperature range can be considerably increased if a constant temperature profile across the belt width is realized. Further, it is shown that plasma etching for isolation gives cause for an increase of the contact resistance of the fingers at the cell edges. Finally, contact resistance differences related to emitter non-uniformity are found. To summarize, the Corescan is a powerful tool that enables easy optimization of front side metallization.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"13 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134529275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Characterization of microcrystalline silicon thin-film solar cells 微晶硅薄膜太阳能电池的表征
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190841
T. Brammer, H. Stiebig
{"title":"Characterization of microcrystalline silicon thin-film solar cells","authors":"T. Brammer, H. Stiebig","doi":"10.1109/PVSC.2002.1190841","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190841","url":null,"abstract":"Absorber layers of microcrystalline silicon thin-film solar cells deposited by plasma-enhanced chemical vapor deposition are characterized regarding the product of the recombination lifetime and the mobility (/spl mu//spl tau/). The characterization is based on a comparison of experimentally determined solar cell characteristics with results from numerical device simulations. Evaluation of the voltage dependent quantum efficiency indicates a strong dependence of /spl mu//spl tau/ on the hydrogen dilution during the deposition. Close to the transition region to amorphous growth where the highest solar cell efficiencies are observed /spl mu//sub e//spl tau/ is maximum within the crystalline deposition regime and equals 2/spl middot/10/sup -7/cm/sup 2/N.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133102509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PV system integrated evaluation software 光伏系统综合评价软件
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190930
P.S. Pimentel, H. Matsukawa, T. Oozeki, Toshiyuki Tomori, K. Kurokawa
{"title":"PV system integrated evaluation software","authors":"P.S. Pimentel, H. Matsukawa, T. Oozeki, Toshiyuki Tomori, K. Kurokawa","doi":"10.1109/PVSC.2002.1190930","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190930","url":null,"abstract":"This paper presents the features of the PV system integrated evaluation software (PVI) developed by Kosuke Kurokawa Lab. team at Tokyo University of Agriculture and Technology (TUAT). PVI was created to assist in the design of grid-connected PV system applications, and mainly consists of a basic design tool and optional tools. The basic design tool is used to determine the PV system annual output energy and system losses percentage based on a detailed parametric analysis on an hourly basis. The optional tools are used for PV applications under complex conditions, including a shading evaluation tool from fish-eye lens pictures for systems facing shading problems, array simulation tool for systems with arrays installed due to different orientations or technologies, and interface to sophisticated verification (SV) method statistical data. The last one allows the user to feedback existing systems performance and loss pattern information to new PV system design projects. Future developments involve validation of the outputs against measured values from actual worldwide systems.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133542697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Capacitance measurements on ZnO/CdS/Cu(In/sub 1-x/Ga)Se/sub 2/ solar cells ZnO/CdS/Cu(In/sub - 1-x/Ga)Se/sub - 2/太阳能电池的电容测量
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190675
H. Wang, I. Shih, C. Champness
{"title":"Capacitance measurements on ZnO/CdS/Cu(In/sub 1-x/Ga)Se/sub 2/ solar cells","authors":"H. Wang, I. Shih, C. Champness","doi":"10.1109/PVSC.2002.1190675","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190675","url":null,"abstract":"Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out on heterojunction ZnO/CdS/Cu(In/sub 1-x/Ga/sub x/)Se/sub 2/ solar cells with different Ga content. These cells were fabricated on polished monocrystalline samples prepared by the Bridgman method. The C-V measurements indicated a significant effect of interface or surface states, especially for the non-annealed samples. Different hole deep levels and different shapes of DLTS spectrum were found in Cu(In/sub 1-x/Ga/sub x/)Se/sub 2/ crystals with different Ga content. It is believed that Ga content has a great impact in the formation of deep levels in Cu(In/sub 1-x/Ga/sub x/)Se/sub 2/ crystals. The DLTS results combined with the conversion efficiencies of the solar cells indicate the interfacial states could dominate the cell performance rather than the deep levels in the semiconductor.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132088104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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