CIS前体的快速热加工

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI:10.1109/PVSC.2002.1190655

L. Kerr, S. Kim, S. Kincal, M. Ider, S. Yoon, T. Anderson

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引用次数: 3

摘要

提出了一种形成CuInSe/ sub2 /的替代工艺。在这种方法中，首先通过迁移增强外延(MEE)在低温下将二元两层前驱体CuSe/In- se沉积在Mo/玻璃衬底上。当Se环境得到控制时，快速热加工(RTP)可以合成单相CuInSe/sub 2/。采用XRD、SEM和ICP对膜的结构、形貌和组成进行了表征。

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Rapid thermal processing of CIS precursors

An alternative process for CuInSe/sub 2/ formation is presented. In this approach, a binary two-layer precursor CuSe/In-Se is first deposited on a Mo/glass substrate at low temperature by migration enhanced epitaxy (MEE). When the Se ambient is controlled, rapid thermal processing (RTP) is able to synthesize single phase CuInSe/sub 2/. The structure, morphology, and composition of the films were characterized by XRD, SEM and ICP.

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来源期刊

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.

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