Analysis of the GaInP/GaAs/1-eV/Ge cell and related structures for terrestrial concentrator application

D. Friedman, S. Kurtz, J. Geisz
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引用次数: 13

Abstract

We analyze the potential of the GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize the following factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the AM1.5 direct spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) Increasing temperature lowers the junction bandgaps, redistributing light to the top junctions. (4) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than /spl sim/75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.
地面聚光用GaInP/GaAs/1-eV/Ge电池及相关结构分析
我们分析了GaInP/GaAs/1-eV/Ge四结太阳能电池的潜力,以提高最先进的GaInP/GaAs/Ge基准的效率。我们强调以下因素:(1)与AM1.5直接光谱相比,新提出的地面集中器光谱具有较低的红蓝光比。(2)标准的两层抗反射涂层不能在这些设备感兴趣的全光谱范围内提供接近零的反射率。(3)温度升高降低了结带隙,使光重新分布到顶部结。(4)迄今为止用于1 ev结的GaInNAs结的量子效率低于/spl sim/75%。这些因素都限制了器件电流,对四结效率产生不利影响。我们讨论了改善这一问题的策略,包括采用替代结构,如GaInP/GaAs/0.9-eV三结器件。
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