Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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PVMaT technology improvements in the EFG high volume PV manufacturing line EFG大批量光伏生产线的PVMaT技术改进
M. Rosenblum, B. Bathey, J. Cao, R. Gonsiorawski, B. Mackintosh, S. Southimath, J. Doedderlein, J. Kalejs
{"title":"PVMaT technology improvements in the EFG high volume PV manufacturing line","authors":"M. Rosenblum, B. Bathey, J. Cao, R. Gonsiorawski, B. Mackintosh, S. Southimath, J. Doedderlein, J. Kalejs","doi":"10.1109/PVSC.2002.1190455","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190455","url":null,"abstract":"We report here on advances made in EFG technology over a 3-year PVMaT 5A2 NREL subcontract. We describe improvements to lower module costs through raising cell efficiencies to 14% and reduction of mechanical and electrical losses. Plasma etching of the laser-cut wafer edges has reduced acid use by >50%. We have introduced 10 cm /spl times/ 15 cm wafers into manufacturing, and a larger diameter EFG furnace for producing 12.5 /spl times/ 12.5 cm wafers has been designed and is in pilot testing. Module encapsulation materials and designs have been improved. This work has been accomplished while simultaneously ramping up to 20 MW in wafer production.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125836421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Direct deposition of textured ZnO:Al TCO films by rf sputtering method for thin film solar cells 薄膜太阳能电池用射频溅射法直接沉积ZnO:Al TCO织构膜
J. Lee, K. Kang, S. Kim, I. Park, J. Song, K. Yoon
{"title":"Direct deposition of textured ZnO:Al TCO films by rf sputtering method for thin film solar cells","authors":"J. Lee, K. Kang, S. Kim, I. Park, J. Song, K. Yoon","doi":"10.1109/PVSC.2002.1190844","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190844","url":null,"abstract":"Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The surface morphology of the films has pyramidal structure and the degree of texture is dependent on the Ar ambient pressure. The pressure in this experiment varied from 50 mTorr to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800nm, and haze ratio of about 14% is obtained at 400nm wavelength. Beside the textured surface, these films also have very low resistivity, lower than 1.4 /spl times/ 10/sup -3/ /spl Omega/cm. X-ray diffraction (XRD) analysis of the films showed the clear change of film growth from columnar to granular growth when the water or methanol was added during sputtering process. The granular growth of the films was closely related to the amount of OH molecules in the films.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125931974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electronic structure and doping of p-type transparent conducting oxides p型透明导电氧化物的电子结构与掺杂
S. Wei, X. Nie, S.B. Zhang
{"title":"Electronic structure and doping of p-type transparent conducting oxides","authors":"S. Wei, X. Nie, S.B. Zhang","doi":"10.1109/PVSC.2002.1190610","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190610","url":null,"abstract":"Transparent conducting oxides (TCOs) are a group of materials that are widely used in solar cells and other optoelectronic devices. Recently, Cu-containing p-type TCOs such as M/sup II/Cu/sub 2/O/sub 2/ (M/sup II/ = Mg, Ca, Sr, Ba) and CuM/sup III/O/sub 2/ (M/sup III/=Al, Ga, In) have been proposed. Using first-principles band structure methods, we have systematically studied the electronic and optical properties of these p-type transparent oxides. For M/sup II/Cu/sub 2/O/sub 2/, we predict that adding a small amount of Ca into SrCu/sub 2/O/sub 2/ can increase the transparency and conductivity. For CuM/sup III/O/sub 2/, we explained the doping and band gap anomalies in this system and proposed a new approach to search for bipolar dopable wide-gap materials.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126072584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells 四结高效太阳能电池的晶圆键合和层转移工艺
J. Zahler, Chang-Geun Anna Fontcubetta I Morral, Hany A Ahn, Thomas J Atwater, Watson, M. Wanlass, Charles Chu Emcore
{"title":"Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells","authors":"J. Zahler, Chang-Geun Anna Fontcubetta I Morral, Hany A Ahn, Thomas J Atwater, Watson, M. Wanlass, Charles Chu Emcore","doi":"10.1109/PVSC.2002.1190783","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190783","url":null,"abstract":"A four-junction cell design consisting of InGaAs, InGaAsP, GaAs, and Ga/sub 0.5/In/sub 0.5/P subcells could reach 1/spl times/AM0 efficiencies of 35.4%, but relies on the integration of non-lattice-matched materials. Wafer bonding and layer transfer processes show promise in the fabrication of InP/Si epitaxial templates for growth of the bottom InGaAs and InGaAsP subcells on a Si support substrate. Subsequent wafer bonding and layer transfer of a thin Ge layer onto the lower subcell stack can serve as an epitaxial template for GaAs and Ga/sub 0.5/In/sub 0.5/P subcells. Present results indicate that optically active III/V compound semiconductors can be grown on both Ge/Si and InP/Si heterostructures. Current voltage electrical characterization of the interfaces of these structures indicates that both InP/Si and Ge/Si interfaces have specific resistances lower than 0.1 /spl Omega/ cm/sup 2/ for heavily doped wafer bonded interfaces, enabling back surface power extraction from the finished cell structure.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123804463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Photovoltaics R&D in the United States: positioning for our future 美国光伏研发:未来定位
L. Kazmerski
{"title":"Photovoltaics R&D in the United States: positioning for our future","authors":"L. Kazmerski","doi":"10.1109/PVSC.2002.1190447","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190447","url":null,"abstract":"This paper provides a brief look at the current U.S. research and development (R&D) investments in photovoltaics, covering the spectrum from materials and devices through electronics and systems reliability. The program is balanced among fundamental R&D, technology development, and systems performance and reliability, with more than half the funding for university and industry partners. The major activities can be categorized into two general areas: improving current and near-term technologies toward their expected performance levels (the largest portion), and positioning the United States for technical leadership, decision making, and ownership for the host of next-technology options (including some options that have been called third-generation). The investments in these higher risk, longer-term technology generations provide options that could leapfrog into more rapid use because of their promise of potentially high payoff. Solar electricity is part of America's present and future energy security and independence-as is the R&D that enables it.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125280191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The development of small concentrating PV systems 小型聚光光伏系统的发展
G. R. Whitfield, R. Bentley, C. Weatherby, B. Clive
{"title":"The development of small concentrating PV systems","authors":"G. R. Whitfield, R. Bentley, C. Weatherby, B. Clive","doi":"10.1109/PVSC.2002.1190865","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190865","url":null,"abstract":"This report describes a continuing program to reduce the cost of solar electricity, by using optical concentrators to reduce the area of costly solar cells required for a given output. An earlier programme showed by spreadsheet analysis that 2 m/sup 2/ collectors with concentration ratios up to 40/spl times/ could be made for 1.5 $/Wp, compared with a conventional planar array at 4.3 $/Wp. Using cheaper materials this can be reduced to 1.2 $/Wp. Further developments are aimed at solar cells for concentration ratios up to 200/spl times/, improved designs of the collector, intelligent low-cost trackers, and production for test, demonstration and sales.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125552768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Thin multicrystalline silicon solar cells with silicon nitride front and rear surface passivation 采用氮化硅前后表面钝化的薄型多晶硅太阳能电池
L. Mittelstadt, A. Metz, R. Hezel
{"title":"Thin multicrystalline silicon solar cells with silicon nitride front and rear surface passivation","authors":"L. Mittelstadt, A. Metz, R. Hezel","doi":"10.1109/PVSC.2002.1190482","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190482","url":null,"abstract":"State-of-the-art multicrystalline silicon (mc-Si) material with minority carrier diffusion lengths exceeding the wafer thickness is commercially available today. It is expected that the diffusion length to wafer thickness ratio will be increasing further due to improved material quality and due to the trend towards thinner wafers to reduce material costs. In order to fully exploit the material quality, a solar cell process that includes excellent rear surface passivation is needed. In this paper we first discuss loss mechanism due to the bulk resistivity of thin wafers, optical losses and losses due to rear surface recombination. Solar cell results for thin mc-Si solar cells with silicon nitride front and rear surface passivation are presented. Experimental results demonstrate that due to the excellent rear surface passivation of our plasma SiN/sub x/ films, the presented solar cell process is capable of improving the solar cell performance with decreasing cell thickness.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"2020 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126848461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High performance and radiation-resistance of GaAs-on-Si solar cells with novel structures 新型结构GaAs-on-Si太阳能电池的高性能和耐辐射性能
M. Yamaguchi, Y. Ohmachi, Y. Kadota, M. Imaizumi, S. Matsuda
{"title":"High performance and radiation-resistance of GaAs-on-Si solar cells with novel structures","authors":"M. Yamaguchi, Y. Ohmachi, Y. Kadota, M. Imaizumi, S. Matsuda","doi":"10.1109/PVSC.2002.1190715","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190715","url":null,"abstract":"Multi-junction (MJ) solar cells on Si substrates are expected as low-cost and high-efficiency cells. Previously, the authors have demonstrated that GaAs-on-Si solar cells with novel structures have better radiation-resistance than GaAs and single-crystal Si space cells. In this paper, effectiveness; of novel structures such as super-lattice, strained super-lattice and Bragg reflectors upon initial performance and radiation-resistance of GaAs-on-Si cells has been studied. GaAs-on-Si cells with Bragg reflectors are found to have better radiation-resistance than those without Bragg reflectors. Insertion of super-lattice and strained super-lattice has also been found to be effective for improving initial cell performance as a result of effects of dislocation annihilation and back-surface field layer by insertion of such layers.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126948602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nature of the Ag-Si interface in screen-printed contacts: a detailed transmission electron microscopy study of cross-sectional structures 丝网印刷接触中Ag-Si界面的性质:横截面结构的详细透射电子显微镜研究
C. Ballif, D.M. Huijic, A. Hessler-Wyser, G. Willeke
{"title":"Nature of the Ag-Si interface in screen-printed contacts: a detailed transmission electron microscopy study of cross-sectional structures","authors":"C. Ballif, D.M. Huijic, A. Hessler-Wyser, G. Willeke","doi":"10.1109/PVSC.2002.1190533","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190533","url":null,"abstract":"As screen printed contacts are the predominant metallisation technique in industrial production of Si solar cells, a better understanding of their properties is necessary. In this work, we show that high-quality cross-sectional samples can be prepared, whose study by transmission electron microscopy (TEM) reveals precisely the structure of the contact between the silver fingers and the Si. On diffused [100] Si wafers, direct firing of an Ag paste results in interfaces which are mainly composed of shaped Ag crystallites penetrating the emitter up to 120 nm. These crystallites are in epitaxial relation with the Si substrate. When firing the contacts through a SiN/sub x/ layer, larger Ag crystallites are present at the interface with Si and the orientation relation is lost. In both cases, high resolution TEM imaging and EDX analyses reveal a crystalline Ag/Si interface, where neither oxide nor glass frit can be detected. The presence of a significant glass frit layer between the Ag crystallites contacting the Si and the large Ag grains forming the bulk of the fingers can partly explain why lowly doped emitters are difficult to contact by screen-printing.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"2 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116162128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Post installation optimisation of a building integrated PV system at Southampton University 南安普顿大学建筑集成光伏系统的安装后优化
A. Bahaj, R. Braid, P. James
{"title":"Post installation optimisation of a building integrated PV system at Southampton University","authors":"A. Bahaj, R. Braid, P. James","doi":"10.1109/PVSC.2002.1190896","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190896","url":null,"abstract":"The deployment of building integrated photovoltaics in the urban environment represents an opportunity for energy production and use at source. It also has a positive impact on expanding the market for photovoltaics resulting in reduction in cell and systems costs. An example of such a system is the subject of this paper. The operation of the photovoltaic facade installed at Southampton University is constantly monitored. In addition to system energy yields, the mismatch losses, notably at low irradiance levels and during periods of shading, were measured and evaluated. The determination of the operational characteristic of each string in the array is critical in identifying the interactions that may occur between strings, and the resultant degrading effect on system performance. The results indicate that the original design configuration of the strings of the array, determined as the optimal from theoretical and conventional principles, is not the most efficient. After optimisation of the connection characteristics of the 24 strings in the array, an increase of 8% in system efficiency was achieved.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114274605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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