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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.最新文献

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Commonly observed degradation in field-aged photovoltaic modules 在现场老化的光伏组件中常见的退化现象
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190879
M. Quintana, D. King, T. Mcmahon, Carl R. Osterwald
{"title":"Commonly observed degradation in field-aged photovoltaic modules","authors":"M. Quintana, D. King, T. Mcmahon, Carl R. Osterwald","doi":"10.1109/PVSC.2002.1190879","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190879","url":null,"abstract":"Degradation leading to failure in photovoltaic modules follows a progression that is dependent on multiple factors, some of which interact causing degradation that is difficult to simulate in the lab. This paper defines observed degradation in field-aged modules, including degradation of packaging materials, adhesional loss, degradation of interconnects, degradation due to moisture intrusion, and semiconductor device degradation. Additionally, this paper suggests that the onset and progression of degradation need to be studied to gain a more comprehensive understanding of module degradation rates and module failures.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114276911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 302
Deposition of microcrystalline silicon films and solar cells via the pulsed PECVD technique 脉冲PECVD技术沉积微晶硅薄膜和太阳能电池
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190798
S. Morrison, U. Das, Arun Madan
{"title":"Deposition of microcrystalline silicon films and solar cells via the pulsed PECVD technique","authors":"S. Morrison, U. Das, Arun Madan","doi":"10.1109/PVSC.2002.1190798","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190798","url":null,"abstract":"The pulsed plasma CVD technique has been shown to increase the deposition rate without an increase in the particulate count in the plasma which is an important factor in determining the yield of commercial products such as solar cell modules. The technique is also more easily scaled to larger areas than the VHF-PECVD technique. In this paper, we report on the deposition of microcrystalline silicon (/spl mu/c-Si) films over large area substrates (30 cm /spl times/ 40 cm) as well on the optimization of /spl mu/c-Si solar cell devices. The effects of nucleation and substrate pre-treatment on the p/i interface are discussed.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122046156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Performance, costs, operational experience, and lessons from over 1100 PV installations 性能、成本、操作经验，以及来自1100多个光伏装置的经验教训
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190898
S. Hester, T. Willey
{"title":"Performance, costs, operational experience, and lessons from over 1100 PV installations","authors":"S. Hester, T. Willey","doi":"10.1109/PVSC.2002.1190898","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190898","url":null,"abstract":"For the past 8 years, the SEPA has played a key role in the commercialization of photovoltaics, first by managing the Technology Experience to Accelerate Markets in Utility Photovoltaics (TEAM-UP) program, and now by managing the Solar Power Solutions (SPS) program. TEAM-UP, completed in 2001, was a partnership program between SEPA, the PV industry, the utility industry, and the US Department of Energy (DOE). The new SEPA SPS program has taken a different approach with a primary focus of how key stakeholders in the public and private sectors can collaborate to harness the benefits of photovoltaics. The program issued an analysis document, the SPS Blueprint and offers competitively awarded funding to showcase PV projects to enhance critical market acceleration elements identified in the Blueprint. This paper describes the goals and results of these market acceleration programs to date.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129584083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BIDIM2: numerical simulator of solar cells in two-dimensions BIDIM2:太阳能电池的二维数值模拟器
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190549
S. Uriarte, C. Ikaran, J. Jimeno, V. Martinez
{"title":"BIDIM2: numerical simulator of solar cells in two-dimensions","authors":"S. Uriarte, C. Ikaran, J. Jimeno, V. Martinez","doi":"10.1109/PVSC.2002.1190549","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190549","url":null,"abstract":"The numerical analysis of semiconductor devices is nowadays a need in the design and optimization of their performances. High efficiency solar cells with 2-dimensional geometries are governed by non-linear effects and require powerful simulators for their study. In this paper we present BIDIM2, a software program specially oriented to the numerical analysis of solar cells. It has been developed in Windows, and uses the finite differences method with a new iterative scheme for numerical resolution of semiconductor equations. Besides, BIDIM2 appears as a good candidate to link fitting procedures of experimental characteristics and numerical tools, to obtain the internal parameters of solar cells. This work has been made under the sponsorship of the Spanish CICYT and their contract TIC-0362.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129594759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth and properties of high quality a-(Si,Ge):H alloys using helium and hydrogen dilution 用氦和氢稀释法制备高质量a-(Si,Ge):H合金的生长和性能
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190811
V. Dalal, Y. Liu, P. Sharma
{"title":"Growth and properties of high quality a-(Si,Ge):H alloys using helium and hydrogen dilution","authors":"V. Dalal, Y. Liu, P. Sharma","doi":"10.1109/PVSC.2002.1190811","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190811","url":null,"abstract":"We report on the growth and properties of a-(Si,Ge):H films and devices prepared using dilution with both hydrogen and helium. The films and devices were grown using a remote ECR plasma discharge. Helium dilution allowed for a higher growth rate than achieved using only hydrogen dilution. It was found that hydrogen dilution was always necessary to achieve good electronic properties. The films were characterized using photoconductivity and subgap absorption measurements. Defect density was measured using space-charge limited current in device-like samples. It was found that good quality films, with Urbach energies below 50 meV, and subgap /spl alpha/ /spl sim/ 1/cm could be grown down to a Tauc bandgap of 1.33 eV. The defect densities increased with increasing Ge content, but were still in the range of 1-2 /spl times/ 10/sup 16/ /cm/sup 3/-eV. Substrate-type p-i-n devices were fabricated in these materials, and good fill factors were obtained. The films and devices were tested for stability.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129715566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin silicon-on-ceramic solar cells 薄硅陶瓷太阳能电池
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190461
E. DelleDonne, A. Ingram, R. Jonczyk, J. Yaskoff, P. Sims, J. Rand, A. Barnett
{"title":"Thin silicon-on-ceramic solar cells","authors":"E. DelleDonne, A. Ingram, R. Jonczyk, J. Yaskoff, P. Sims, J. Rand, A. Barnett","doi":"10.1109/PVSC.2002.1190461","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190461","url":null,"abstract":"AstroPower is developing an advanced photovoltaic module product based on thin silicon-on-ceramic substrates. This paper reviews motivations, technical approaches and electrical results for single device cells that benefit the development of a monolithically interconnected solar array product. A short circuit current density of 25.8 mA/cm/sup 2/ was achieved in a single cell device that demonstrates significant light trapping and excellent back surface passivation. A 9.1% efficient thin film silicon-on-ceramic solar cell was demonstrated using a thermal spray technique. These accomplishments form a basis for the continued research and development towards a new class of thin-silicon solar cell products.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129343509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Efficient surface passivation by silicon nitride using a large area deposition system 采用大面积沉积系统的氮化硅高效表面钝化
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190508
W. Kintzel, M. Bail, R. Auer, R. Brendel
{"title":"Efficient surface passivation by silicon nitride using a large area deposition system","authors":"W. Kintzel, M. Bail, R. Auer, R. Brendel","doi":"10.1109/PVSC.2002.1190508","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190508","url":null,"abstract":"We demonstrate high quality surface passivation of Si wafers with silicon nitride films deposited on an area of 40/spl times/40 cm/sup 2/ in a remote plasma-enhanced chemical vapor deposition system. We deposit silicon nitride films on both sides of the wafers at various temperatures and source gas pressures. Lifetime measurements yield a surface recombination velocity of S/sub eff/ = 32 cm/s using Si wafers with a resistivity of 1.4 /spl Omega/cm. The standard deviation of S/sub eff/ is as small as 4 cm/s over the area of 40/spl times/40 cm/sup 2/.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124568004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
An alternative model for V, G and T dependence of CdTe solar cells IV characteristics CdTe太阳能电池特性V, G和T依赖性的替代模型
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190672
G. Agostinell, D.L. Batzner, M. Burgelman
{"title":"An alternative model for V, G and T dependence of CdTe solar cells IV characteristics","authors":"G. Agostinell, D.L. Batzner, M. Burgelman","doi":"10.1109/PVSC.2002.1190672","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190672","url":null,"abstract":"It is generally assumed that the main features of CdTe IV curves (rollover, crossover) depend on a reverse diode located at the back contact. The front region of CdTe solar cells can play an equally important role in determining voltage, irradiance and temperature dependence of the IV characteristics. We propose a model of current transport that relies on the presence of a light and temperature dependent majority carrier barrier in the band diagram. We infer that this barrier forms as a consequence of intermixing at the TCO/CdS and CdS/CdTe interfaces and compensation of donors in CdS. Numerical simulation gives consistent results with the observed measurement characteristics.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129428044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A new thin-film CuGaSe/sub 2//Cu(In,Ga)Se/sub 2/ bifacial, tandem solar cell with both junctions formed simultaneously 制备了一种新型CuGaSe/sub 2//Cu(In,Ga)Se/sub 2/双面串联太阳能电池
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190638
D. Young, J. Abushama, R. Noufi, Xiaonan Li, J. Keane, T. Gessert, J. Ward, M. Contreras, M. Symko-Davies, T. Coutts
{"title":"A new thin-film CuGaSe/sub 2//Cu(In,Ga)Se/sub 2/ bifacial, tandem solar cell with both junctions formed simultaneously","authors":"D. Young, J. Abushama, R. Noufi, Xiaonan Li, J. Keane, T. Gessert, J. Ward, M. Contreras, M. Symko-Davies, T. Coutts","doi":"10.1109/PVSC.2002.1190638","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190638","url":null,"abstract":"Thin films of CuGaSe/sub 2/ and Cu(In,Ga)Se/sub 2/ were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n/sup +/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60/spl deg/C. The resulting four-terminal device is a nonmechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (/spl eta/ = 3.7%, V/sub oc/ = 1.1 V [AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126878214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Formation of p/sup +/ CdTe contact with Cu/sub 2/Te electrode and its stability in CdTe cells p/sup +/ CdTe与Cu/sub 2/Te电极接触的形成及其在CdTe电池中的稳定性
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. Pub Date : 2002-05-19 DOI: 10.1109/PVSC.2002.1190622
J. Yun, K. Kim, D. Lee, Byung Tee Ahn, T. Ohno
{"title":"Formation of p/sup +/ CdTe contact with Cu/sub 2/Te electrode and its stability in CdTe cells","authors":"J. Yun, K. Kim, D. Lee, Byung Tee Ahn, T. Ohno","doi":"10.1109/PVSC.2002.1190622","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190622","url":null,"abstract":"Cu/sub 2/Te electrode was utilized as a Cu source to form p/sup +/-CdTe and its stability in CdTe cells has been investigated. An amorphous interlayer was found at the CdTe/Cu/sub 2/Te interface by depositing Cu/sub 2/Te at room temperature and it was crystallized by annealing at 200/spl deg/C, enhancing the growth of hexagonal phase compared to orthorhombic phase. A good p/sup +/ ohmic contact was formed at 180/spl deg/C annealing and the best efficiency was obtained at 200/spl deg/C. The cell efficiency was degraded under forward bias and it was either improved or recovered both under reverse bias and by additional annealing, The cell with thinner CdTe layer was degraded faster and more severely affected by bias stress.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126905623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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