{"title":"Identifying critical pathways to high performance PV","authors":"M. Symko-Davies, R. Noufi, S. Kurtz","doi":"10.1109/PVSC.2002.1190955","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190955","url":null,"abstract":"The High-Performance Photovoltaic (HiPerf PV) Project was initiated by the US Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment in the 21st century. To accomplish this, the NCPV directs in-house and subcontracted research in high-performance polycrystalline thin-film and multijunction concentrator devices. Details of the subcontractor and in-house progress are described toward identifying critical pathways of 25% polycrystalline thin-film tandem cells and developing multijunction concentrator modules to 33%.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123485307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xuan-ying Lin, Kui-xun Lin, Chuangjun Huang, Yun-peng Yu, Chuying Yu, L. Chi
{"title":"Low-temperature growth of poly-crystalline silicon films using SiCl/sub 4/ and H/sub 2/ mixture","authors":"Xuan-ying Lin, Kui-xun Lin, Chuangjun Huang, Yun-peng Yu, Chuying Yu, L. Chi","doi":"10.1109/PVSC.2002.1190848","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190848","url":null,"abstract":"Polycrystalline silicon thin films were deposited at 200 degC using a SiCl/sub 4//H/sub 2/ mixture by conventional plasma enhanced chemical vapor deposition technology. The effect of deposition power on grain size and crystallinity has been determined. The maximum grain size measured by SEM is 1.5 /spl mu/m. The crystallinity of films estimated from Raman spectroscopy is more than 90% and it depends strongly on the deposition power. The measurements of energy dispersion spectroscopy shows that the films are composed of pure silicon, without impurities such as Cl, H, C, N, and O, etc.. The low-temperature growth mode is discussed.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124491585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Perkins, J. A. del Cueto, J. Alleman, A.C. Warmsingh, B. Keyes, L. Gedvilas, P. Parilla, X. Li, B. To, D. Readey, M. Van Hest, D. Ginley
{"title":"Discovery and optimization of In-Zn-Sn-O based transparent conductors by combinatorial and pulsed laser deposition approaches","authors":"J. Perkins, J. A. del Cueto, J. Alleman, A.C. Warmsingh, B. Keyes, L. Gedvilas, P. Parilla, X. Li, B. To, D. Readey, M. Van Hest, D. Ginley","doi":"10.1109/PVSC.2002.1190804","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190804","url":null,"abstract":"There is an expanding interest in the development of new transparent conducting oxides (TCOs) for a host of applications including photovoltaics, flat panel displays, and low-e and electrochromic windows. In this paper, we discuss the application of compositional spread combinatorial techniques for the initial characterization of the ZnO-SnO/sub 2/ TCO tie line. Local maxima in the composition dependence of the conductivity were found for Zn/Sn - 2:1 (Zn/sub 2/SnO/sub 4/) and Zn/Sn - 1:1 (ZnSnO/sub 3/). Interesting compositions were further explored by pulsed laser deposition.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121792701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A simple passive cooling structure and its heat analysis for 500/spl times/ concentrator PV module","authors":"K. Araki, H. Uozumi, Masahiro Yamaguchi","doi":"10.1109/PVSC.2002.1190913","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190913","url":null,"abstract":"A new and simple module structure for the 500/spl times/ concentrator module made by printed epoxy and a copper sheet on aluminum plate was proposed. The heat analysis was done and showed that around a 10 degree rises at the surface of the cell compared to normal irradiated flat-plane was expected without the help of classical heat sinks. An outdoor test was done and confirmed its cooling performance.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115775212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Carrier density imaging (CDI): a spatially resolved lifetime measurement suitable for in-line process-control","authors":"J. Isenberg, S. Riepe, S. Glunz, W. Warta","doi":"10.1109/PVSC.2002.1190509","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190509","url":null,"abstract":"Carrier density imaging (CDI) is introduced as a new, spatially resolved carrier lifetime measurement technique in solar cell production. CDI provides the actual local lifetimes as compared to standard lifetime mapping techniques (e.g. MW-PCD) which yield the differential lifetime only. Most important, CDI is an extremely fast measurement technique: A measurement on a 100/spl times/100 mm/sup 2/ wafer under low-level injection conditions can be performed on a timescale of seconds whereas a standard MW-PCD map needs about 2 hours for a measurement with identical resolution even if high injection conditions are chosen. The combination of a spatially resolved and fast measurement predestines CDI for in-line process control. It is possible to achieve actual lifetime maps with overall measurement times on the order of seconds on as cut samples as well as on emitter-diffused wafers without any surface passivation. Improvements for further reduction of measurement time are discussed.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"11 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113962266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Higher efficiency for thin multi crystalline silicon solar cells by improving the rear surface passivation","authors":"C. Tool, P. Manshanden, A. Burgers, A. Weeber","doi":"10.1109/PVSC.2002.1190519","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190519","url":null,"abstract":"For wafers thicker than 200 /spl mu/m, the efficiency of industrial multicrystalline silicon solar cells is independent of wafer thickness. An important efficiency limitation of these thin solar cells is the poor rear surface passivation due to the short minority carrier diffusion length of the aluminium BSF. The most likely reason for the poor quality of the BSF is the poor crystallinity of the BSF due to fast cooling of the cells during metallisation firing. Possible solutions to overcome this limitation are presented.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132338832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Combination of plasma diagnostics and modelling for the investigation of microcrystalline silicon deposition process","authors":"D. Mataras, E. Amanatides, D. Rapakoulias","doi":"10.1109/PVSC.2002.1190812","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190812","url":null,"abstract":"In this work is presented a study of the microcrystalline silicon PECVD process using highly diluted silane in hydrogen discharges. The investigation is performed by applying various non-intrusive plasma diagnostics (electrical, optical, mass spectrometric and laser interferometric measurements). Each of these measurements is related to different plasma sub-processes and all of them compose an almost complete set for the investigation of the effect of external discharge parameters on the deposition process. Thus, based on these measurements, a mass transfer model of SiH/sub 4//H/sub 2/ discharges that involves gas phase chemistry and plasma surface interaction is used, aiming at the optimization of the deposition rate of /spl mu/c-Si:H as well as the prediction of the main film precursors at conditions of low and high deposition rates. In this way, the main characteristics of the effect of frequency, discharge geometry, power consumption and total gas pressure on the deposition process are studied. The increase of silane dissociation rate towards neutral radicals (frequency), the contribution of highly sticking radicals (discharge geometry) and the controlled production of higher radicals through secondary gas phase reactions (gas pressure), are presented as prerequisites for the achievement of high deposition rates (> 5/spl Aring//sec).","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132534930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Meier, J. Jessup, P. Hacke, S. Granata, N. Ishikawa, M. Emoto
{"title":"Production of thin (70-100 /spl mu/m) crystalline silicon cells for conformable modules","authors":"D. Meier, J. Jessup, P. Hacke, S. Granata, N. Ishikawa, M. Emoto","doi":"10.1109/PVSC.2002.1190468","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190468","url":null,"abstract":"PhosTop solar cells, having a back Al alloy p-n junction with a Ag/SiN/sub x//n/sup +/np/sup +//Al structure, were fabricated from dendritic web silicon substrates 70-100 /spl mu/m thick. High-throughput, automated production tools (screen printers, belt furnaces, etc.) were used to produce 3.3 cm /spl times/ 10.0 cm cells. Cell blanks remained essentially flat throughout the process, in spite of full back coverage by screen-printed and alloyed aluminum. The ability of thin web substrates to remain flat is tentatively attributed to three factors: the open structure of the aluminum layer (89% packing factor), the relatively small thickness of the aluminum layer (17 /spl mu/m), and the effective stiffening of the web substrate by slip dislocations pushed against internal twin planes. Cell efficiencies up to 14.1%, with excellent IQE, were obtained. These thin web cells were found to conform comfortably to the curved surface of a cylinder 15 cm in diameter. Demonstration modules, designed to fit around a pole 50 cm in diameter, were also fabricated.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134014833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low cost AC power monitor for residential PV support","authors":"A. Rosenthal, J. Mani, M. Kachare","doi":"10.1109/PVSC.2002.1190888","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190888","url":null,"abstract":"The rate at which new, residential on-grid PV systems are being installed increases every year. Yet, most include virtually no metering, customer education or other support for the system owners. The California Energy Commission's Renewable Energy Program Evaluation, October 2000, stated that consumers need a basic level of system performance measurement in order to verify whether their system is operating properly. This echoes a recurring observation that has been made by researchers, at least, since 1990. Consumers can turn to after-market meters which exist, but these are often inaccurate and none supports remote display. Of equal concern is that manufacturers of most meters assume a basic knowledge of electrical power that homeowners do not possess. To help meet this longstanding need, an inexpensive, accurate, AC power monitor has been developed for installation by an untrained homeowner. This monitor incorporates a power line carrier remote display that can be located anywhere in the home. The monitor and associated training materials have been designed to teach consumers to accurately assess PV system performance and recognize system failures. It is hoped that the unit's low cost and potential consumer value demonstrate its commercial viability.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131494995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Mahawela, S. Jeedigunta, C. Ferekides, D. Morel
{"title":"Development of II-VI high band gap devices for high efficiency tandem solar cells","authors":"P. Mahawela, S. Jeedigunta, C. Ferekides, D. Morel","doi":"10.1109/PVSC.2002.1190667","DOIUrl":"https://doi.org/10.1109/PVSC.2002.1190667","url":null,"abstract":"Simulations indicate that efficiencies of 25-30% are attainable in 4-terminal, compound semiconductor thin film devices. CIGS can serve as the bottom cell, but a high band gap, transparent top cell with greater than 17% efficiency is needed. CdSe with an Eg of 1.7 eV and Cd/sub x/Zn/sub 1-x/Te (CZT) that can also be tuned to this range show high potential for this role. Using MIS structures we have demonstrated the attainment of high electronic quality CdSe. External Jsc's of 14.7 mA/cm/sup 2/ have been attained without correction for substantial losses in the Cu contact. Similar progress has been made with CZT. High quality, single phase material has been demonstrated.","PeriodicalId":177538,"journal":{"name":"Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.","volume":"284 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131607800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}